Mathematical Modeling of Semiconductor Devices

  • Peter A. Markowich
Part of the Computational Microelectronics book series (COMPUTATIONAL)


In this Chapter we shall formulate the system of partial differential equations, which describes potential distribution, carrier concentrations and current flow in semiconductor devices. We shall supplement the system by boundary conditions representing the interaction of the device with the outer world and discuss the modeling of physical parameters appearing in the system. Also, various choices of dependent variables, which are useful for analytical purposes, will be presented. Finally, we shall scale the physical quantities and put the system of equations and the boundary conditions into a dimensionless form appropriate for further mathematical and numerical investigations.


Carrier Concentration Semiconductor Device Schottky Contact Doping Profile Current Relation 
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Copyright information

© Springer-Verlag Wien 1986

Authors and Affiliations

  • Peter A. Markowich
    • 1
  1. 1.Institut für Angewandte und Numerische MathematikTechnische Universität WienViennaAustria

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