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Deterministic Solvers for the Boltzmann Transport Equation

Part of the book series: Computational Microelectronics ((COMPUTATIONAL))

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Abstract

Due to the continuous scaling during the last five decades the feature size of semiconductor devices has reached the deca-nanometer range [1], and scaling is expected to continue for some time [2]. For such scaled devices, transport can no longer be described accurately by momentum based models (drift-diffusion or hydrodynamic models) [3, 4], which fail even in the linear transport regime [5, 6].

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Authors and Affiliations

  1. Device Laboratory, Samsung Information Systems America, Inc., 75 West Plumeria Drive, San Jose, CA, 95134, USA

    Sung-Min Hong

  2. Institut für Elektronische Bauelemente und Schaltungstechnik, TU Braunschweig, 3329, 38023, Braunschweig, Germany

    Anh-Tuan Pham

  3. Institut für Theoretische Elektrotechnik, RWTH Aachen University, Templergraben 55, 52056, Aachen, Germany

    Christoph Jungemann

Authors
  1. Sung-Min Hong
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  2. Anh-Tuan Pham
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  3. Christoph Jungemann
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Correspondence to Sung-Min Hong .

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Hong, SM., Pham, AT., Jungemann, C. (2011). Introduction. In: Deterministic Solvers for the Boltzmann Transport Equation. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0778-2_1

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  • DOI: https://doi.org/10.1007/978-3-7091-0778-2_1

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  • Print ISBN: 978-3-7091-0777-5

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