Abstract
Stress effects on dopant diffusion and activation are of critical interest in current and future CMOS devices. Since experiments are very difficult to perform, we utilized ab-initio calculations to predict the effect of stress on B solubility. We find strongly enhanced solubility under compressive biaxial stress, whereas tensile biaxial stress leads to a reduction. In contrast to other work the enhancement/reduction is primarily due to the size effect of substitutional B. We compared our calculated B strain relaxation effect with various x-ray diffraction data, which shows excellent agreement. Measurements in different SiGe alloys also support our predictions.
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Diebel, M., Chakravarthi, S., Dunham, S.T., Machala, C.F. (2004). Ab-initio Calculations to Predict Stress Effects on Boron Solubility in Silicon. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_9
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_9
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
Online ISBN: 978-3-7091-0624-2
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