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Simulation of Semiconductor Processes and Devices 2004 pp 207–210Cite as

Electro-thermal Simulations of Strained-Si MOSFETs under ESD conditions

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Abstract

Electro-thermal characteristics of strained-Si MOSFETs operating in high-current, high temperature regimes were investigated using device/circuit mixed mode simulations. The material parameters of strained-Si were calibrated for device simulations. Especially the phonon mean-free-path of strained-Si with high electric fields was estimated based on a full-band Monte Carlo device simulation. Despite the low thermal conductivity of buried SiGe layers, strained-Si devices show superior Electrostatic Discharge (ESD) protection capability compared to unstrained-Si (bulkSi) devices due to the high bipolar current gain and increased impact ionization rate.

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References

  1. K. Rim et al., IEEE Trans. Electron Dev., pp.1406–1415, 2000.

    Google Scholar 

  2. S. T. Huxtable et al., Applied Physics Letters, vol. 80, pp.1737–1739, 2001.

    Article  Google Scholar 

  3. A. Amerasekera et al., ISBN 0-471-49871-8, pp.17–27, 2002.

    Google Scholar 

  4. J. Goo et al., IEEE Electron Dev Letter, pp.568–570, 2003.

    Google Scholar 

  5. C. Choi et al., Nano Tech. Conf., 2004.

    Google Scholar 

  6. MEDICI: Two-Dimensional Device Simulation Program, Synopsys Inc., 2002..

    Google Scholar 

  7. Y. Ohno, IEEE Trans. Electron Dev., pp. 1889–1894, 1991.

    Google Scholar 

  8. C. Jungemann, IEICE Trans. Electronics., pp.870–879, 1999.

    Google Scholar 

  9. S. Voldman et al., EOS/ESD Sym., pp.239–250, 2000.

    Google Scholar 

  10. C. Choi et al., SISPAD, p.304, 1998.

    Google Scholar 

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Author information

Authors and Affiliations

  1. Center for Integrated Systems, Stanford University, CA, 94305

    Jung-Hoon Chun, Chang-Hoon Choi & Robert W. Dutton

Authors
  1. Jung-Hoon Chun
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  2. Chang-Hoon Choi
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  3. Robert W. Dutton
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Editor information

Editors and Affiliations

  1. Lehrstuhl für Technische Elektrophysik, Technische Universität München, Munich, Federal Republic of Germany

    Gerhard Wachutka  & Gabriele Schrag  & 

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© 2004 Springer-Verlag Wien

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Chun, JH., Choi, CH., Dutton, R.W. (2004). Electro-thermal Simulations of Strained-Si MOSFETs under ESD conditions. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_47

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  • DOI: https://doi.org/10.1007/978-3-7091-0624-2_47

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7212-4

  • Online ISBN: 978-3-7091-0624-2

  • eBook Packages: Springer Book Archive

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