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Simulation of Semiconductor Processes and Devices 2004 pp 169–172Cite as

Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys

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Abstract

We have extended our Monte Carlo ion implantation simulator for Si1_xGex targets in order to analyze the applicability for advanced CMOS devices. The penetration depth of ion implanted dopants in relaxed SiGe is significantly reduced compared to pure silicon due to the larger nuclear and electronic stopping power. The successful calibration for the simulation of arsenic and boron implantations in Si1_xGex with different germanium fraction x is demonstrated by comparing the predicted doping profiles with SIMS measurements. A shift towards shallower profiles with increasing germanium content was found in a non-linear manner. Finally, the simulation result of source/drain implants for a MOSFET structure on a SiGe substrate is presented.

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References

  1. G. Hobler and S. Selberherr, IEEE Transactions on CAD 8, 450 (1989).

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  2. R. Wittmann, A. Hössinger, and S. Selberherr, Proceedings ESS 2003 1, 35 (2003).

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  3. E. Kasper and K. Lyutovich, Properties of Silicon Germanium and SiGe: Carbon (INSPEC, London, United Kingdom, 1999).

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  4. J. Ziegler, Ion Implantation Science and Technology (Ion Implantation Technology Co., New York, 1996).

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  5. G. Hobler and H. Pötzl, Proceeedings Mat.Res.Soc.Symp. 279, 165 (1993).

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Author information

Authors and Affiliations

  1. Institute for Microelectronics, TU Vienna, Gußhausstraße 27-29, A-1040, Wien, Austria

    R. Wittmann, A. Hössinger & S. Selberherr

Authors
  1. R. Wittmann
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  2. A. Hössinger
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  3. S. Selberherr
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Editor information

Editors and Affiliations

  1. Lehrstuhl für Technische Elektrophysik, Technische Universität München, Munich, Federal Republic of Germany

    Gerhard Wachutka  & Gabriele Schrag  & 

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© 2004 Springer-Verlag Wien

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Wittmann, R., Hössinger, A., Selberherr, S. (2004). Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_40

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  • DOI: https://doi.org/10.1007/978-3-7091-0624-2_40

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7212-4

  • Online ISBN: 978-3-7091-0624-2

  • eBook Packages: Springer Book Archive

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