Abstract
We developed a simulation tool for the three-dimensional orientation-dependent wet etching of silicon, based on the “step flow model” proposed by Schröder [1]. Its extension and its implementation in our simulation tool have been described in detail in [3,4]. Employing numerical simulation we could demonstrate the applicability of the step flow model to complex three-dimensional structures. In this paper we demonstrate the simulation of the etch process of basic exemplary structures featuring buried etch stop layers and polysilicon layers, and the “virtual fabrication” of an industrial sensor structure manufactured by means of bulk micromachining.
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References
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© 2004 Springer-Verlag Wien
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Horn, A., Wachutka, G. (2004). Three-Dimensional Simulation of Orientation-Dependent Wet Chemical Etching. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_32
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_32
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
Online ISBN: 978-3-7091-0624-2
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