Abstract
The derivation of a local mobility model for symmetrical ultra-thin OGSOI nMOSFETs is outlined. A local-field variant is found to reproduce the dependencies ofthe quantummechanical mobility on silicon slab thickness and normal field with a maximum error of 10%. The model can be used with the density-gradient approach.
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References
A. Schenk and A. Wettstein, “Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model”, Proc. SISPAD 2002, pp. 21–24.
A. Wettstein, “Quantum Effects in MOS Devices”, PhD Thesis No. 13649, ETH Zrich, ISBN: 3-89649-566-6, Hartung-Gorre, 2000.
S. A. Schwarz and S. E. Russek, “Semi-Empirical Equations for Electron Velocity in Silicon”, IEEE Trans. El. Dev., ED-30(12), pp. 1629–1633, 1983.
M. N. Darwish, J. L. Lentz, M. R. Pinto, P. M. Zeitzoff, T. J. Krutsick, and H. H. Vuong, “An Improved Electron and Hole Mobility Model for General Purpose Device Simulation”, IEEE Trans. El. Dev., ED-44(9), pp. 1529–1537, 1997.
F. Gamiz and M. V. Fischetti, “Remote Coulomb Scattering in MOSFETs: Screening by Electrons in the Gate”, APL 83(23), pp. 4848–4850, (2003).
S. Takagi, A. Toriumi, M. Iwase, and H. Tango, “On the Universality of Inversion Layer Mobility in Si MOSFET’s”, IEEE Trans. El. Dev., ED-41(12), pp. 2357–2368, 1994.
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© 2004 Springer-Verlag Wien
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Schenk, A. (2004). A Local Mobility Model for Ultra-Thin DGSOI nMOSFETs. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_27
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_27
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
Online ISBN: 978-3-7091-0624-2
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