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Simulation of Semiconductor Processes and Devices 2004 pp 9–12Cite as

NEMO 1-D: the first NEGF-based TCAD tool

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Abstract

The fundamentally sound non-Equilibrium Green’s function (NEGF) approach provides the theoretical basis for NEMO 1-D as the first nanoelectronic TCAD tool. Effects of quantum charging, bandstructure and incoherent scattering from alloy disorder, interface roughness, acoustic phonons, and polar optical phonons are modeled. Engineers and experimentalists who desire a black-box design tool as well as theorists who are interested in a detailed investigation of the physics have found NEMO useful. Access to this comprehensive theoretical framework is accommodated by a graphical user interface (GUI) which configures the usage of a collection of models that trade off physical content with speed and memory requirements. This article describes the NEMO origin, provides modern references to NEGF, accumulates the diverse references to the NEMO results, and provides a perspective on NEGF in future TCAD tools.

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Author information

Authors and Affiliations

  1. Purdue University, School of Electrical and Computer Engineering, Network for Computational Nanotechnology, West Lafayette, IN, 47906

    Gerhard Klimeck

  2. Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, 91109

    Gerhard Klimeck

Authors
  1. Gerhard Klimeck
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Editor information

Editors and Affiliations

  1. Lehrstuhl für Technische Elektrophysik, Technische Universität München, Munich, Federal Republic of Germany

    Gerhard Wachutka  & Gabriele Schrag  & 

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© 2004 Springer-Verlag Wien

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Klimeck, G. (2004). NEMO 1-D: the first NEGF-based TCAD tool. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_2

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  • DOI: https://doi.org/10.1007/978-3-7091-0624-2_2

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7212-4

  • Online ISBN: 978-3-7091-0624-2

  • eBook Packages: Springer Book Archive

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