Abstract
One of the most remarkable phenomena in the early days of silicon technology was the “emitterpush” effect which causes an enhanced diffusion of dopants below regions with high phosphorus concentrations (see Section 5.8.3). To explain it, it was soon concluded that some sort of farranging “interaction particle” is needed. Since other impurities as well as extended defects could be excluded, this role was equally soon attributed to the intrinsic point defects introduced in Section 1.1.3. Indeed, intrinsic point defects play important roles in nearly all theories of impurity diffusion in silicon. Therefore, before proceeding with the latter in the next chapters, the properties of intrinsic point defects will be reviewed in the following.
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Bibliography
R. O. Simmons and R. W. Balluffi, “Measurement of Equilibrium Vacancy Concentration in Aluminium,” Phys. Rev., vol. 117, no. 1, 52–61 (1960).
A. Seeger and M. L. Swanson, “Vacancies and Diffusion Mechanisms in Diamond-Structure Semiconductors,” in: Lattice Defects in Semiconductors, edited by R. R. Hasiguti, Tokyo: University of Tokyo Press, 93–130 (1968).
A. Seeger and K. P. Chik, “Diffusion Mechanism and Point Defects in Silicon and Germanium,” phys. stat. sol, vol. 29, 455–542 (1968).
W. Schottky, “Über den Mechanismus der Ionenbewegung in festen Elektrolyten,” Z. Phys. Chem. B, vol. 29, 335–355 (1935).
M. Lannoo and J. Bourgoin, Point Defects in Semiconductors I, Springer Series in Solid-State Sciences, vol. 22, Berlin: Springer (1981).
E. Guerrero, Verteilung von Dotierungsatomen in Silicium-Einkristallen, Ph.D. thesis, Technical University of Vienna (1984).
J. A. Van Vechten, “A Simple Man’s View of the Thermochemistry of Semiconductors,” in: Materials, Properties and Preparations, edited by S. P. Keller, Handbook on Semiconductors, vol. 3, Amsterdam: North-Holland, 1–111 (1980).
W. Shockley and J. L. Moll, “Solubility of Raws in Heavily-Doped Semiconductors,” Phys. Rev., vol. 119, no. 5, 1480–1482 (1960).
R. L. Longini and R. F. Greene, “Ionization Interaction between Impurities in Semiconductors and Insulators,” Phys. Rev., vol. 102, no. 4, 992–999 (1956).
M. W. Valenta and C. Ramasastry, “Effects of Heavy Doping on the Self-Diffusion of Germanium,” Phys. Rev., vol. 106, no. 1, 73–75 (1957).
W. Shockley and J. T. Last, “Statistics of the Charge Distribution for a Localized Flaw in a Semiconductor,” Phys. Rev., vol. 107, no. 2, 392–396 (1957).
P. M. Fahey, Point Defects and Dopant Diffusion in Silicon, Ph.D. thesis, Integrated Circuits Laboratory, Department of Electrical Engineering, Stanford University (1985).
J. A. Van Vechten and C. D. Thurmond, “Entropy of Ionization and Temperature Variation of Ionization Levels of Defects in Semiconductors,” Phys. Rev. B, vol. 14, no. 8, 3539–3550 (1976).
D. Mathiot and J. C. Pfister, “Dopant Diffusion in Silicon: A Consistent View Involving Nonequilibrium Defects,” J. Appl Phys., vol. 55, no. 10, 3518–3530 (1984).
R. B. Fair, “The Effect of Strain-Induced Band-Gap Narrowing on High Concentration Phosphorus Diffusion in Silicon,” J. Appl Phys., vol. 50, no. 2, 860–868 (1979).
P. M. Fahey, P. B. Griffin, and J. D. Plummer, “Point Defects and Dopant Diffusion in Silicon,” Reviews of Modern Physics, vol. 61, no. 2, 289–384 (1989).
J. P. Hirth and J. Lothe, Theory of Dislocations, New York: McGraw-Hill (1968).
L. Borucki, “Modeling the Growth and Annealing of Dislocation Loops,” in: Proceedings NU-PADIV, New York: IEEE, 27–32 (1992).
H. Park, K. S. Jones, and M. E. Law, “A Point Defect Based Two-Dimensional Model of the Evolution of Dislocation Loops in Silicon during Oxidation,” J. Electrochem. Soc, vol. 141, no. 3, 759–765 (1994).
I. V. Peidous and K. V. Loiko, “Screening of Dislocations in Silicon by Point Defects,” in: High Purity Silicon VI, edited by C. L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H. J. Dawson, Electrochem. Soc. Proc, vol. 2000-17, 145–155 (2000).
K. Tanahashi and N. Inoue, “Non-Equilibrium Thermodynamic Analysis on the Behaviour of Point Defects in Growing Silicon Crystals: Effects of Stress,” Journal of Materials Science: Materials in Electronics, vol. 10, 359–363 (1999).
K. V. Loiko, I. V. Peidous, T. E. Harrington, and W. R. Frensley, “Stress-Induced Redistribution of Point Defects in Silicon Device Structures,” in: Gettering and Defect Engineering in Semiconductor Technology GADEST 2001, edited by V. Raineri, F. Priolo, M. Kittler, and H. Richter, Solid State Phenomena, vol. 82-84, 225–230 (2002).
A. Seeger, H. Föll, and W. Frank, “Self-Interstitials, Vacancies and Their Clusters in Silicon and Germanium,” in: Radiation Effects in Semiconductors, 1976, edited by N. B. Urli and J. W. Corbett, Inst. Phys. Conf. Ser., no. 31, 12–29 (1977).
M. Budil, H. Pötzl, G. Stingeder, M. Grasserbauer, and K. Goser, “A New Model of Anomalous Phosphorus Diffusion in Silicon,” in: Defects in Semiconductors 15, edited by G. Ferenczi, Materials Science Forum, vol. 38-41, 719–724 (1989).
J. A. Van Vechten, “Enthalpy of Vacancy Migration in Si and Ge,” Phys. Rev. B, vol. 10, no. 4, 1482–1506 (1974).
Y. Nakabayashi, H. I. Osman, K. Yokota, K. Toyonaga, S. Matsumoto, J. Murota, K. Wada, and T. Abe, “Type and Charge States of Point Defects in Heavily As-and B-Doped Silicon,” Materials Science in Semiconductor Processing, vol. 6, 15–19 (2003).
S. M. Hu, “Diffusion in Silicon and Germanium,” in: Atomic Diffusion in Semiconductors, edited by D. Shaw, London: Plenum Press, 217–350 (1973).
U. Gösele and T. Y. Tan, “The Nature of Point Defects and Their Influence on Diffusion Processes in Silicon at High Temperatures,” in: Defects in Semiconductors II, edited by S. Mahajan and J. W. Corbett, Mat. Res. Soc. Symp. Proc, vol. 14, 45–59 (1983).
K. Compaan and Y. Haven, “Correlation Factors for Diffusion in Solids,” Trans. Faraday Soc, vol. 52, 786–801 (1956).
M. Yoshida, “Diffusion of Group V Impurity in Silicon,” Jpn. J. Appl. Phys., vol. 10, no. 6, 702–713 (1971).
D. Shaw, “Self-and Impurity Diffusion in Ge and Si,” phys. stat. sol (b), vol. 72, 11–39 (1975).
K. Compaan and Y. Haven, “Correlation Factors for Diffusion in Solids. Part 2 — Indirect Interstitial Mechanism“ Trans. Faraday Soc, vol. 54, 1498–1508 (1958).
S. M. Hu, “Modeling Diffusion in Silicon: Accomplishments and Challenges,” in: VLSI Science and Technology/1985, edited by W. M. Bullis and S. Broydo, Electrochem. Soc. Proc, vol. 85-5, 465–506 (1985).
S. M. Hu, “Nonequilibrium Point Defects and Diffusion in Silicon,” Materials Science and Engineering, vol. R13, 105–192 (1994).
R. F. Peart, “Self Diffusion in Intrinsic Silicon,” phys. stat. sol., vol. 15, K119–K122 (1966).
R. N. Ghoshtagore, “On the Mechanism of Substitutional Diffusion in Silicon,” phys. stat. sol., vol. 20, K89–K94 (1967).
D. L. Kendall and D. B. De Vries, “Diffusion in Silicon,” in: Semiconductor Silicon, edited by R. R. Haberecht and E. L. Kerns, Electrochem. Soc. Proc, 358–421 (1969).
S. Dannefaer, P. Mascher, and D. Kerr, “Monovacancy Formation Enthalpy in Silicon,” Phys. Rev. Lett., vol. 56, no. 20, 2195–2198 (1986).
J. A. Van Vechten, “Divacancy Binding Enthalpy and Contribution of Divacancies to Self-Diffusion in Si,” Phys. Rev. B, vol. 33, no. 4, 2674–2689 (1986).
K. C. Pandey, “Diffusion without Vacancies or Interstitials: A New Concerted Exchange Mechanism,” Phys. Rev. Lett., vol. 57, no. 18, 2287–2290 (1986).
M. I. Heggie, “Self-Diffusion, Deformation and Melting in Silicon — A Microscopic Link,” Phil. Mag. Lett., vol. 58, no. 2, 75–80 (1988).
K. C. Pandey and E. Kaxiras, “Entropy Calculation beyond the Harmonic Approximation: Application to Diffusion by Concerted Exchange in Si,” Phys. Rev. Lett., vol. 66, no. 7, 915–918 (1991).
P. E. Blöchl, E. Smargiassi, R. Car, D. B. Laks, W. Andreoni, and S. T. Pantelides, “First-Principles Calculation of Self-Diffusion Constants in Silicon,” Phys. Rev. Lett., vol. 70, no. 16, 2435–2438 (1993).
E. Kaxiras and K. C. Pandey, “Contribution of Concerted Exchange to the Entropy of Self-Diffusion in Si,” Phys. Rev. B, vol. 47, no. 3, 1659–1662 (1993).
A. Antonelli, S. Ismail-Beigi, E. Kaxiras, and K. C. Pandey, “Free Energy of the Concerted-Exchange Mechanism for Self-Diffusions in Silicon,” Phys. Rev. B, vol. 53, no. 3, 1310–1314 (1996).
W.-K. Leung, R. J. Needs, G. Rajagopal, S. Itoh, and S. Ihara, “Calculations of Silicon Self-Interstitial Defects,” Phys. Rev. Lett., vol. 83, no. 12, 2351–2354 (1999).
R. J. Needs, “First-Principles Calculations of Self-Interstitial Defect Structures and Diffusion Paths in Silicon,” J. Phys.: Condens. Matter, vol. 11, 10437–10450 (1999).
A. Ural, P. B. Griffin, and J. D. Plummer, “Experimental Study of Self-Diffusion in Silicon Using Isotopically Enriched Structures,” in: Si Front-End Processing — Physics and Technology of Dopant-Defect Interactions, edited by H.-J. L. Gossmann, T. E. Haynes, M. E. Law, A. Nylandsted Larsen, and S. Odanaka, Mat. Res. Soc Symp. Proc, vol. 568, 97–102 (1999).
A. Ural, P. B. Griffin, and J. D. Plummer, “Fractional Contributions of Microscopic Diffusion Mechanisms for Common Dopants and Self-Diffusion in Silicon,” J. Appl. Phys., vol. 85, no. 9, 6440–6446 (1999).
I. D. Sharp, H. A. Bracht, H. H. Silvestri, S. P. Nicois, J. W. Beeman, J. L. Hansen, A. Nylandsted Larsen, and E. E. Haller, “Self-and Dopant Diffusion in Extrinsic Boron Doped Isotopically Controlled Silicon Multilayer Structures,” in: Defect and Impurity Engineered Semiconductors and Devices III, edited by S. Ashok, J. Chevallier, N. M. Johnson, B. L. Sopori, and H. Okushi, Mat. Res. Soc. Symp. Proc., vol. 719, F13.11.1–F13.11.6 (2002).
H. Bracht, E. E. Haller, and R. Clark-Phelps, “Silicon Self-Diffusion in Isotope Heterostructures,” Phys. Rev. Lett., vol. 81, no. 2, 393 (1998).
H. Bracht, E. E. Haller, K. Eberl, M. Cardona, and R. Clark-Phelps, “Self-Diffusion in Isotopically Controlled Heterostructures of Elemental and Compound Semiconductors,” in: Diffusion Mechanisms in Crystalline Materials, edited by Y. Mishin, G. Vogl, N. Cowern, R. Catlow, and D. Farkas, Mat. Res. Soc. Symp. Proc, vol. 527, 335–346 (1998).
A. Ural, P. B. Griffin, and J. D. Plummer, “Self-Diffusion in Silicon: Similarity between the Properties of Native Point Defects,” Phys. Rev. Lett., vol. 83, no. 17, 3454–3457 (1999).
Y. Nakabayashi, H. I. Osman, T. Segawa, K. Saito, S. Matsumoto, J. Murota, K. Wada, and T. Abe, “Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched 30Si Layer,” Jpn. J. Appl. Phys., Part 2, vol. 40, no. 3A, L181–L182 (2001).
Y Nakabayashi, H. I. Osman, K. Toyonaga, K. Yokota, S. Matsumoto, J. Murota, K. Wada, and T. Abe, “Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30Silicon/Natural Silicon Heterostructures,” Jpn. J. Appl. Phys., Part 1, vol. 42, no. 6A, 3304–3310 (2003).
R. N. Ghoshtagore, “Method for Determining Silicon Diffusion Coefficients in Silicon and in Some Silicon Compounds,” Phys. Rev. Lett., vol. 16, no. 20, 890–892 (1966).
J. M. Fairfield and B. J. Masters, “Self-Diffusion in Intrinsic and Extrinsic Silicon,” J. Appl. Phys., vol. 38, no. 8, 3148–3154 (1967).
H. J. Mayer, H. Mehrer, and K. Maier, “Self-Diffusion in Silicon between 1320 K and 1660 K,” in: Radiation Effects in Semiconductors, 1976, edited by N. B. Urli and J. W. Corbett, Inst. Phys. Conf. Ser., no. 31, 186–193 (1977).
J. Hirvonen and A. Anttila, “Self-Diffusion in Silicon As Probed by the (P, γ) Resonance Broadening Method,” Appl. Phys. Lett, vol. 35, no. 9, 703–705 (1979).
L. Kalinowski and R. Seguin, “Self-Diffusion in Intrinsic Silicon,” Appl. Phys. Lett., vol. 35, no. 3, 211–212 (1979).
L. Kalinowski and R. Seguin, “Erratum: Self-Diffusion in Intrinsic Silicon [Appl. Phys. Lett. 35, 211 (1979)],” Appl. Phys. Lett., vol. 36, no. 2, 171 (1980).
F. J. Demond, S. Kalbitzer, H. Mannsperger, and H. Damjantschitsch, “Study of Self-Diffusion by Nuclear Techniques,” Physics Letters, vol. 93A, no. 9, 503–506 (1983).
A. Strohm, T. Voss, W. Frank, P. Laitinen, and J. Räisänen, “Self-Diffusion of 71Ge and 31Si in Si-Ge Alloys,” Z. Metallkd., vol. 93, no. 7, 737–744 (2002).
T. Y. Tan and U. Gösele, “Point Defects, Diffusion Processes, and Swirl Defect Formation in Silicon,” Appl. Phys. A, vol. 37, 1–17 (1985).
M. J. Aziz, E. Nygren, W. H. Christie, C. W. White, and D. Turnbull, “Effect of Pressure on Self Diffusion in Crystalline Silicon,” in: Impurity Diffusion and Gettering in Silicon, edited by R. B. Fair, C. Pearce, and J. Washburn, Mat. Res. Soc. Symp. Proc, vol. 36, 101–104 (1985).
M. J. Aziz, “Stress Effects on Defects and Dopant Diffusion in Si,” Materials Science in Semiconductor Processing, vol. 4, 397–403 (2001).
G. Hettich, H. Mehrer, and K. Maier, “Tracer Diffusion of 71 Ge and 31 Si in Intrinsic and Doped Silicon,” in: Defects and Radiation Effects in Semiconductors, 1978, edited by J. H. Albany, Inst. Phys. Conf. Ser., no. 46, 500–507 (1979).
A. Ural, P. B. Griffin, and J. D. Plummer, “Silicon Self-Diffusion under Extrinsic Conditions,” Appl. Phys. Lett., vol. 79, no. 26, 4328–330 (2001).
H. I. Osman, Y. Nakabayashi, S. Tomohisa, K. Toyonaga, S. Matsumoto, J. Murota, K. Wada, and T. Abe, “Effect of Vacancy Double Acceptor Level on Si Self-Diffusion under Heavy Doping Conditions,” in: Semiconductor Silicon 2002, edited by H. R. Huff, L. Fabry, and S. Kishino, Electrochem. Soc. Proc, vol. 2002-2, 248–253 (2002).
H. H. Silvestri, I. D. Sharp, H. A. Bracht, S. P. Niçois, J. W. Beeman, J. Hansen, A. Nylandsted-Larsen, and E. E. Haller, “Dopant and Self-Diffusion in Extrinsic n-Type Silicon Isotopically Controlled Heterostructures,” in: Defect and Impurity Engineered Semiconductors and Devices III, edited by S. Ashok, J. Chevallier, N. M. Johnson, B. L. Sopori, and H. Okushi, Mat. Res. Soc. Symp. Proc, vol. 719, F13.10.1–F13.10.6 (2002).
G. L. McVay and A. R. DuCharme, “The Diffusion of Germanium in Silicon,” J. Appl. Phys., vol. 44, no. 3, 1409–1410 (1973).
F. Morehead, N. A. Stolwijk, W. Meyberg, and U. Gösele, “Self-Interstitial and Vacancy Contribution to Silicon Self-Diffusion Determined from the Diffusion of Gold in Silicon,” Appl. Phys. Lett., vol. 42, no. 8, 690–692 (1983).
H. Kitagawa and M. Yoshida, “On the Distinction between the Dissociative and Kick-Out Mechanisms for Site Exchange in Silicon,” Jpn. J. Appl. Phys., Part I, vol. 31, no. 9A, 2859–2963 (1992).
H. Bracht and E. E. Haller, “Comment on “Self-Diffusion in Silicon: Similarity between the Properties of Native Point Defects”,” Phys. Rev. Lett., vol. 85, no. 22, 4835 (2000).
A. Ural, P. B. Griffin, and J. D. Plummer, “Reply: Ural, Griffin, and Plummer,” Phys. Rev. Lett., vol. 85, no. 22, 4836 (2000).
H. Bracht, N. A. Stolwijk, and H. Mehrer, “Properties of Intrinsic Point Defects in Silicon Determined by Zinc Diffusion Experiments under Nonequilibrium Conditions,” Phys. Rev. B, vol. 52, no. 23, 16542–16560 (1995).
H.-J. Gossmann, P. A. Stolk, D. J. Eaglesham, C. S. Rafferty, and J. M. Poate, “Fast Metal Diffusers in Si in the Presence of Si Self-Interstitial Traps,” Appl. Phys. Lett., vol. 67, no. 21, 3135–3137 (1995).
P. Pichler, “A Reinterpretation of Platinum-Diffusion Experiments,” in: ESSDERC98, edited by A. Touboul, Y. Danto, J. P. Klein, and H. Grünbacher, Paris: Edition Frontières, 348–351 (1998).
P. Pichler, “Extraction of Vacancy Parameters from Outdiffusion of Zinc from Silicon,” in: Gettering and Defect Engineering in Semiconductor Technology GADEST’99, edited by H. G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler, and H. Richter, Solid State Phenomena, vol. 69-70, 455–460 (1999).
D. Mathiot, “Diffusion Modeling from a Fundamental Viewpoint,” in: Semiconductor Silicon, edited by H. R. Huff, T. Abe, and B. Kolbesen, Electrochem. Soc. Proc, vol. 86-4, 556–570 (1986).
D. Mathiot, “Gold, Self-, and Dopant Diffusion in Silicon,” Phys. Rev. B, vol. 45, no. 23, 13345–13355 (1992).
M. Yoshida and K. Saito, “Dissociative Diffusion of Nickel in Silicon and Self-Diffusion of Silicon,” Jpn. J. Appl. Phys., vol. 6, no. 5, 573–581 (1967).
V. V. Voronkov, “The Mechanism of Swirl Defects Formation in Silicon,” J. Crystal Growth, vol. 59, 625–643 (1982).
K. Wada and N. Inoue, “Depth Profile of Bulk Stacking Fault Radius in Czochralski Silicon,” J. Appl. Phys., vol. 58, no. 3, 1183–1186 (1985).
M. Budil, E. Guerrero, T. Brabec, S. Selberherr, and H. Pötzl, “A New Model for the Determination of Point Defect Equilibrium Concentrations in Silicon,” in: NUMOS I, edited by J. J. H. Miller, Dun Laoghaire: Boole Press, 37–44 (1986).
T. Brabec, E. Guerrero, M. Budil, and H. W. Pötzl, “Simulation of Retarded Diffusion of Antimony and Enhanced Diffusion of Phosphorus in Silicon,” Z. Phys. B, vol. 67, 415–420 (1987).
P. B. Griffin, Physics and Modeling of Two-Dimensional Diffusion in SUPREM-IV, Ph.D. thesis, Integrated Circuits Laboratory, Department of Electrical Engineering, Stanford University (1989).
H. Zimmermann, A. Strauß, and H. Ryssel, “The Modeling of Platinum Diffusion in Silicon,” in: Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, J. D. Plummer, and S. T. Pantelides, Electrochem. Soc. Proc, vol. 91-4, 337–344 (1991).
M. E. Law, “Parameters for Point-Defect Diffusion and Recombination,” IEEE Trans. Computer-Aided Design, vol. 10, no. 9, 1125–1131 (1991).
S. T. Dunham, “A Quantitative Model for the Coupled Diffusion of Phosphorus and Point Defects in Silicon,” J. Electrochem. Soc, vol. 139, no. 9, 2628–2636 (1992).
H. Park and M. E. Law, “Point Defect Based Modeling of Low Dose Silicon Implant Damage and Oxidation Effects on Phosphorus and Boron Diffusion in Silicon,” J. Appl. Phys., vol. 72, no. 8, 3431–3439 (1992).
T. Okino, “Diffusivity of Self-Interstitials and Vacancies in Silicon,” Jpn. J. Appl. Phys., Part 2, vol. 32, no. 6B, L856–L858 (1993).
R. Habu, T. Iwasaki, H. Harada, and A. Tomiura, “Diffusion Behavior of Point Defects in Si Crystal during Melt Growth IV: Numerical Analysis,” Jpn. J. Appl. Phys., Part 1, vol. 33, no. 3A, 1234–1242 (1994).
T. Okino and M. Onishi, “Analysis of P and Sb Diffusion during Thermal Oxidation in Silicon,” Jpn. J. Appl. Phys., Part 1, vol. 33, no. 6A, 3362–3367 (1994).
K. Ghaderi, G. Hobler, M. Budil, L. Mader, and H. J. Schulze, “Determination of Silicon Point Defect Parameters and Reaction Barrier Energies from Gold Diffusion Experiments,” J. Appl. Phys., vol. 77, no. 3, 1320–1322 (1995).
R. Habu and A. Tomiura, “Distribution of Grown-in Crystal Defects in Silicon Crystals Formed by Point Defect Diffusion during Melt-Growth: Disappearance of the Oxidation Induced Stacking Faults-Ring,” Jpn. J. Appl. Phys., Part 1, vol. 35, no. 1A, 1–9 (1996).
W. B. Knowlton, J. T. Walton, J. S. Lee, D. Lewak, Y. K. Wong, and E. E. Haller, “Properties of Silicon Point Defects As Revealed by Lithium Ion Drift,” in: Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, C. S. Murthy, and S. T. Dunham, Electrochem. Soc. Proc, vol. 96-4, 324–336 (1996).
T. Sinno, R. A. Brown, W. von Ammon, and E. Dornberger, “On the Dynamics of the Oxidation-Induced Stacking-Fault Ring in As-Grown Czochralski Silicon Crystals,” Appl. Phys. Lett., vol. 70, no. 17, 2250–2252 (1997).
S. Chakravarthi and S. T. Dunham, “Point Defect Properties from Metal Diffusion Experiments — What Does the Data Really Tell Us?” in: Defects and Diffusion in Silicon Processing, edited by T. Diaz de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, Mat. Res. Soc. Symp. Proc, vol. 469, 47–52 (1997).
K. Nakamura, T. Saishoji, T. Kubota, T. Iida, Y. Shimanuki, T. Kotooka, and J. Tomioka, “Formation Process of Grown-in Defects in Czochralski Grown Silicon Crystals,” J. Crystal Growth, vol. 180, 61–72 (1997).
J. T. Walton, E. E. Haller, W B. Knowlton, Y K. Wong, W von Ammon, and W. Zulehner, “Lithium-Ion Drifting: Application to the Study of Point Defects in Floating-Zone Silicon,” in: Diagnostic Techniques for Semiconductor Materials and Devices, edited by P. Rai-Choudhury, J. L. Benton, D. K. Schroder, and T. J. Shaffner, Electrochem. Soc Proc, vol. 97-12, 400–411 (1997).
T. Sinno, R. A. Brown, W von Ammon, and E. Dornberger, “Point Defect Dynamics and the Oxidation-Induced Stacking-Fault Ring in Czochralski-Grown Silicon Crystals,” J. Electrochem. Soc, vol. 145, no. 1, 302–318 (1998).
A. Giese, H. Bracht, J. T. Walton, and N. A. Stolwijk, “Properties of Vacancies in Silicon Determined by Out-Diffusion of Zinc from Silicon,” in: Diffusion Mechanisms in Crystalline Materials, edited by Y Mishin, G. Vogl, N. Cowern, R. Catlow, and D. Farkas, Mat. Res. Soc. Symp. Proc, vol. 527, 395–400 (1998).
E. Dornberger, T. Sinno, J. Esfandyari, J. Vanhellemont, R. A. Brown, and W. von Ammon, “Determination of Intrinsic Point Defect Properties in Silicon by Analyzing OSF Ring Dynamics and Void Formation,” in: High Purity Silicon V, edited by C. L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and J. J. Dawson, Electrochem. Soc. Proc, vol. 98-13, 170–187 (1998).
V. V. Voronkov and R. Falster, “Vacancy-Type Microdefect Formation in Czochralski Silicon,” J. Crystal Growth, vol. 194, 76–88 (1998).
R. Falster, V. V. Voronkov, and F. Quast, “On the Properties of the Intrinsic Point Defects in Silicon: A Perspective from Crystal Growth and Wafer Processing,” phys. stat. sol. (b), vol. 222, 219–244 (2000).
T. Mori, Z. Wang, and R. A. Brown, “Transient Simulation of Grown-in Defect Dynamics in Czochralski Crystal Growth of Silicon,” in: High Purity Silicon VI, edited by C. L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H. J. Dawson, Electrochem. Soc. Proc, vol. 2000-17, 118–128 (2000).
M. Akatsuka, M. Okui, N. Morimoto, and K. Sueoka, “Effect of Rapid Thermal Annealing on Oxygen Precipitation Behavior in Silicon Wafers,” Jpn. J. Appl. Phys., Part 1, vol. 40, no. 5A, 3055–3062 (2001).
P. Pichler, “Properties of Vacancies in Silicon Determined from Laser-Annealing Experiments,” in: ESSDERC 2002, edited by G. Baccarani, E. Gnani, and M. Rudan, Bologna: University of Bologna, 335–338 (2002).
M. Okui and M. Nishimoto, “Effect of the Axial Temperature Gradient on the Formation of Grown-in Defect Regions in Czochralski Silicon Crystals; Reversion of the Defect Regions between the Inside and Outside of the Ring-OSF,” J. Crystal Growth, vol. 237-239, 1651–1656 (2002).
I. R. Sanders and P. S. Dobson, “The Application of the Loop Annealing Technique to Self Diffusion Studies in Silicon,” Journal of Materials Science, vol. 9, 1987–1993 (1974).
K. Wada and N. Inoue, “Diffusion Coefficient of Self-Interstitials Determined by Bulk Stacking Fault Growth in CZ Silicon,” in: Defects and Radiation Effects in Semiconductors, 1980, edited by R. R. Hasiguti, Inst. Phys. Conf. Sen, no. 59, 461-166 (1981).
N. A. Stolwijk, B. Schuster, J. Hölzl, H. Mehrer, and W Frank, “Diffusion and Solubility of Gold in Silicon,” in: Proceedings of the 12 th International Conference on Defects in Semiconductors, edited by C. A. J. Ammerlaan, Physica, vol. 116B, 335–342 (1983).
K. Taniguchi, D. A. Antoniadis, and Y. Matsushita, “Kinetics of Self-Interstitials Generated at the Si/Si02 Interface,” Appl. Phys. Lett., vol. 42, no. 11, 961–963 (1983).
S. Mantovani, F. Nava, and C. Nobili, “Thermal Diffusion of Pt in Silicon from PtSi,” Appl. Phys. Lett., vol. 44, no. 3, 328–330 (1984).
N. A. Stolwijk, B. Schuster, and J. Hölzl, “Diffusion of Gold in Silicon Studied by Means of Neutron-Activation Analysis and Spreading-Resistance Measurements,” Appl. Phys. A, vol. 33, 133–140 (1984).
G. B. Bronner and J. D. Plummer, “Physical Modeling of Backside Gettering,” in: Impurity Diffusion and Gettering in Semiconductors, edited by R. B. Fair, C. W. Pearce, and J. Washburn, Mat. Res. Soc. Symp. Proc, vol. 36, 49–54 (1985).
J. Hauber, N. A. Stolwijk, L. Tapfer, H. Mehrer, and W Frank, “U-and W-Shaped Diffusion Profiles of Gold in Silicon,” J. Phys. C, vol. 19, 5817–5836 (1986).
S. Mantovani, F. Nava, C. Nobili, and G. Ottaviani, “In-Diffusion of Pt from the PtSi/Si Interface,” Phys. Rev. B, vol. 33, no. 8, 5536–5544 (1986).
G. B. Bronner and J. D. Plummer, “Gettering of Gold in Silicon: A Tool for Understanding the Properties of Silicon Interstitials,” J. Appl. Phys., vol. 61, no. 12, 5286–5298 (1987).
F. F. Morehead, “The Diffusivity of Self-Interstitials in Silicon,” in: Defects in Electronic Materials, edited by M. Stavola, S. J. Pearton, and G. Davies, Mat. Res. Soc. Symp. Proc, vol. 104, 99–104 (1988).
S. Coffa, L. Calcagno, S. U. Campisano, G. Calleri, and G. Ferla, “Diffusion of Ion-Implanted Gold in p-Type Silicon,” J. Appl. Phys., vol. 64, no. 11, 6291–6295 (1988).
H. U. Jäger, T. Feudel, and S. Ulbricht, “Modeling of Defect-Phosphorus Pair Diffusion in Phosphorus-Implanted Silicon,” phys. stat. sol. (a), vol. 116, 571–581 (1989).
J. Hauber, W. Frank, and N. A. Stolwijk, “Diffusion and Solubility of Platinum in Silicon,” in: Defects in Semiconductors 15, edited by G. Ferenczi, Materials Science Forum, vol. 38-41, 707–712 (1989).
M. Perret, N. A. Stolwijk, and L. Coshausz, “Kick-Out Diffusion of Zinc in Silicon at 1262 K,” J. Phys.: Condens. Matter, vol. 1, 6347–6361 (1989).
C. Boit, F. Lau, and R. Sittig, “Gold Diffusion in Silicon by Rapid Optical Annealing,” Appl. Phys. A, vol. 50, 197–205 (1990).
M. D. Giles, “Transient Phosphorus Diffusion below the Amorphization Threshold,” J. Electrochem. Soc, vol. 138, no. 4, 1160–1165 (1991).
D. Grünebaum, T. Czekalla, N. A. Stolwijk, H. Mehrer, I. Yonenaga, and K. Sumino, “Diffusion and Solubility of Zinc in Dislocation-Free and Plastically Deformed Silicon Crystals,” Appl. Phys. A, vol. 53, 65–74 (1991).
R. Y. S. Huang and R. W. Dutton, “Experimental Investigation and Modeling of the Role of Extended Defects during Thermal Oxidation,” J. Appl. Phys., vol. 74, no. 9, 5821–5827 (1993).
W. Lerch and N. A. Stolwijk, “Diffusion of Gold in Silicon during Rapid Thermal Annealing: Effectiveness of the Surface As a Sink for Self-Interstitials,” J. Appl. Phys., vol. 83, no. 3, 1312–1320 (1998).
N. E. B. Cowern, G. Mannino, P. A. Stolk, F. Roozeboom, H. G. A. Huizing, J. G. M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraiz, “Cluster Ripening and Transient Enhanced Diffusion in Silicon,” Materials Science in Semiconductor Processing, vol. 2, 369–376 (1999).
H. Meyer and S. T. Dunham, “Modeling of TED and Point Defect Parameter Extraction,” in: Silicon Front-End Junction Formation Technologies, edited by D. F. Downey, M. E. Law, A. P. Claverie, and M. J. Rendon, Mat. Res. Soc. Symp. Proc, vol. 717, C4.8.1–C4.8.6 (2002).
T. Okino, T. Shimosaki, and R. Takaue, “Self-Interstitials in Silicon,” Jpn. J. Appl. Phys., Part 1, vol. 36, no. 11, 6591–6594 (1997).
G. D. Watkins, “An EPR Study of the Lattice Vacancy in Silicon,” in: Proceedings of the International Conference on Crystal Lattice Defects, 1962, J. Phys. Soc. Japan, vol. 18, Supplement II, 22–27 (1963).
G. D. Watkins, “A Review of EPR Studies in Irradiated Silicon,” in: Radiation Damage in Semiconductors, Paris: Dunod, 97–113 (1964).
G. D. Watkins, “EPR Studies of the Lattice Vacancy and Low-Temperature Damage Processes in Silicon,” in: Lattice Defects in Semiconductors, 1974, Inst. Phys. Conf. Ser, no. 23, 1–22 (1975).
G. D. Watkins, J. R. Troxell, and A. P. Chatterjee, “Vacancies and Interstitials in Silicon,” in: Defects and Radiation Effects in Semiconductors, 1978, edited by J. H. Albany, Inst. Phys. Conf Ser., no. 46, 16–30 (1979).
M. Sprenger, S. H. Muller, and C. A. J. Ammerlaan, “The Negatively Charged Vacancy in Silicon: Hyperfine Interactions from ENDOR Measurement,” in: Proceedings of the 12 th International Conference on Defects in Semiconductors, edited by C. A. J. Ammerlaan, Physica, vol. 116B, 224–229 (1983).
M. Sprenger, S. H. Muller, E. G. Sieverts, and C. A. J. Ammerlaan, “Vacancy in Silicon: Hyperfine Interactions from Electron-Nuclear Double Resonance Measurements,” Phys. Rev. B, vol. 35, no. 4, 1566–1581 (1987).
J. C. Brabant, M. Pugnet, J. Barbolla, and M. Brousseau, “Studies of Defects Introduced by Electron Irradiation at 4.2 °K in p-Silicon by Thermally Stimulated Capacitance Technique,” J. Appl. Phys., vol. 47, no. 11, 4809–4813 (1976).
L. C. Kimerling, “Defect States in Electron-Bombarded Silicon: Capacitance Transient Analyses,” in: Radiation Effects in Semiconductors, 1976, edited by N. B. Urli and J. W. Corbett, Inst. Phys. Conf. Sen, no. 31, 221–230 (1977).
L. C. Kimerling, P. Blood, and W. M. Gibson, “Defect States in Proton-Bombarded Silicon at T<300 K,” in: Defects and Radiation Effects in Semiconductors, 1978, edited by J. H. Albany, Inst. Phys. Conf. Sen, no. 46, 273–280 (1979).
G. D. Watkins and J. R. Troxell, “Negative-U Properties for Point Defects in Silicon,” Phys. Rev. Lett., vol. 44, no. 9, 593–596 (1980).
J. L. Newton, A. P. Chatterjee, R. D. Harris, and G. D. Watkins, “Negative-U Properties of the Lattice Vacancy in Silicon,” in: Proceedings of the 12 th International Conference on Defects in Semiconductors, edited by C. A. J. Ammerlaan, Physica, vol. 116B, 219–223 (1983).
P. W. Anderson, “Model for the Electronic Structure of Amorphous Semiconductors,” Phys. Rev. Lett., vol. 34, no. 15, 953–955 (1975).
G. A. Baraff, E. O. Kane, and M. Schlüter, “Silicon Vacancy: A Possible “Anderson Negative-U” System,” Phys. Rev. Lett., vol. 43, no. 13, 956–959 (1979).
G. A. Baraff, E. O. Kane, and M. Schlüter, “Simple Parameterized Model for Jahn-Teller Systems: Vacancy in p-Type Silicon,” Phys. Rev. B, vol. 21, no. 8, 3563–3570 (1980).
G. A. Baraff, E. O. Kane, and M. Schlüter, “Theory of the Silicon Vacancy: An Anderson Negative-U System,” Phys. Rev. B, vol. 21, no. 12, 5662–5686 (1980).
B. N. Mukashev, V. V. Frolov, and L. G. Koldin, “Determination of the Electrical Level of Vacancy in Electron Irradiated p-Type Silicon,” Phys. Lett., vol. 91A, no. 1, 358–360 (1982).
H. J. Hoffmann, “Negative-U Properties of the Vacancy in Si and Experimental p(l/T) Characteristics,” Phys. Lett, vol. 98A, no. 8/9, 444–446 (1983).
V V. Emtsev, T. V. Mashovets, and A. V. Dabagyan, “Equilibrium Occupancy Level of Vacancies in Silicon,” Sov. Phys. Semicond., vol. 21, no. 10, 1143–1146 (1987).
V. V. Emtsev, M. A. Margaryan, and T. V. Mashovets, “Determination of the Energy Characteristics of a Vacancy in Silicon As a Center with a Negative Correlation Energy,” Sov. Phys. Semicond., vol. 18, no. 8, 950–951 (1984).
J. A. Van Vechten, “The Entropy of Neutral and Ionized Vacancies in Si and Ge,” in: Lattice Defects in Semiconductors, 1974, Inst. Phys. Conf. Sen, no. 23, 212–220 (1975).
J. R. Troxell and G. D. Watkins, “DLTS Studies of the Isolated Vacancy in Silicon,” Bull. Am. Phys. Soc, Series II, vol. 24, no. 1, 18 (1979).
J. Mäkinen, C. Corbel, P. Hautojärvi, P. Moser, and F. Pierre, “Positron Trapping at Vacancies in Electron-Irradiated Si at Low Temperatures,” Phys. Rev. B, vol. 39, no. 14, 10162–10173 (1989).
L. C. Kimerling, H. M. De Angelis, and C. P. Carnes, “Annealing of Electron-Irradiated n-Type Silicon. I. Donor Concentration Dependence,” Phys. Rev., vol. 3, no. 2, 427–433 (1971).
N. I. Boyarkina, “Participation of the Electron Subsystem of a Crystal in the Reactions of Defect-Complex Decomposition in Semiconductors,” Semiconductors, vol. 34, no. 4, 410–414 (2000).
V V. Lukjanitsa, “Energy Levels of Vacancies and Interstitial Atoms in the Band Gap of Silicon,” Sov. Phys. Semicond., vol. 37, no. 4, 404–413 (2003).
R. B. Fair, “Recent Advances in Implementation and Diffusion Modeling for the Design and Process Control of Bipolar ICs,” in: Semiconductor Silicon 1977, edited by H. R. Huff and E. Sirtl, Electrochem. Soc. Proc, vol. 77-2, 968–987 (1977).
V. I. Gubskaya, P. V Kuchinskii, and V M. Lomako, “The Effect of the Vacancy Charge State on the Radiation Defect Formation in Silicon,” phys. stat. sol. (a), vol. 85, 585–590 (1984).
V V. Emtsev, T. V Mashovets, V. V. Mikhnovich, and N. A. Vitovskii, “Frenkel Pairs in Silicon and Germanium,” Radiation Effects, vol. 111&112, no. 1-2, 99–118 (1989).
K. Matsui and R. R. Hasiguti, “Gamma-Irradiation of High Purity p-Type Silicon with Special Reference to Single Vacancy,” J. Phys. Soc. Japan, vol. 20, no. 4, 487–90 (1965).
J. A. Naber, C. E. Mallon, and R. E. Leadon, “Charge State Dependence of Defects Produced in Electron-Irradiated Silicon,” in: Radiation Damage and Defects in Semiconductors, Inst. Phys. Conf. Sen, no. 16, 26–33 (1973).
P. F. Lugakov and T. A. Lukashevich, “Characteristic of Formation of Radiation Defects in High-Resistivity Silicon,” Sov. Phys. Semicond., vol. 23, no. 3, 365 (1989).
J. C. Brabant, M. Pugnet, J. Barbolla, and M. Brousseau, “Study by Thermally Stimulated Capacitance Techniques of Defects Introduced at Low Temperature by Electron Irradiation in p-Silicon,” in: Radiation Effects in Semiconductors, 1976, edited by N. B. Urli and J. W. Corbett, Inst. Phys. Conf. Ser., no. 31, 200–206 (1977).
N. Zangenberg, J.-J. Goubet, and A. Nylandsted Larsen, “On-Line DLTS Investigations of the Mono-and Di-Vacancy in p-Type Silicon after Low Temperature Electron Irradiation,” Nuclear Instruments and Methods in Physics Research B, vol. 186, 71–77 (2002).
O. K. Al-Mushadani and R. J. Needs, “Free-Energy Calculations of Intrinsic Point Defects in Silicon,” Phys. Rev. B, vol. 68, 235205 (2003).
S. Dannefaer, G. W. Dean, D. P. Kerr, and B. G. Hogg, “Influence of Defects and Temperature on the Annihilation of Positrons in Neutron-Irradiated Silicon,” Phys. Rev. B, vol. 14, no. 7, 2709–2714 (1976).
W. Fuhs, U. Holzhauer, S. Mantl, F. W. Richter, and R. Sturm, “Annihilation of Positron in Electron-Irradiated Silicon Crystals,” phys. stat. sol. (b), vol. 89, 69–75 (1978).
R. Würschum, W. Bauer, K. Maier, A. Seeger, and H.-E. Schaefer, “Defects in Semiconductors after Electron Irradiation or in High-Temperature Thermal Equilibrium, As Studied by Positron Annihilation,” J. Phys.: Condens. Matter, vol. 1, SA33–SA48 (1989).
P. Mascher, S. Dannefaer, and D. Kerr, “Positron Trapping Rates and Their Temperature Dependencies in Electron-Irradiated Silicon,” Phys. Rev. B, vol. 40, no. 17, 11764–11771 (1989).
S. Mäkinen, H. Rajainmäki, and S. Linderoth, “Low-Temperature Positron-Lifetime Studies of Proton-Irradiated Silicon,” Phys. Rev. B, vol. 42, no. 17, 11166–11173 (1990).
K. Saarinen, J. Nissilä, H. Kauppinen, M. Hakala, M. J. Puska, P. Hautojärvi, and C. Corbel, “Identification of Vacancy-Impurity Complexes in Highly n-Type Si,” Phys. Rev. Lett., vol. 82, no. 9, 1883–1886 (1999).
M. J. Puska, O. Jepsen, O. Gunnarsson, and R. M. Nieminen, “Electronic Structure and Positron States at Vacancies in Si and GaAs,” Phys. Rev. B, vol. 34, no. 4, 2695–2705 (1986).
M. J. Puska and C. Corbel, “Positron States in Si and GaAs” Phys. Rev. B, vol. 38, 9874–9880 (1988).
M. J. Puska, S. Mäkinen, M. Manninen, and R. M. Nieminen, “Screening of Positrons in Semiconductors and Insulators,” Phys. Rev. B, vol. 39, no. 11, 7666–7679 (1989).
M. J. Puska, “Theory of Positron Annihilation and Trapping in Semiconductors,” in: Positron Annihilation, edited by Z. Kajcsos and C. Szeles, Materials Science Forum, vol. 105-110, 419–430 (1992).
M. Saito and A. Oshiyama, “Lifetimes of Positrons Trapped at Si Vacancies,” Phys. Rev. B, vol. 53, no. 12, 7810–7814 (1996).
M. Hakala, M. J. Puska, and R. M. Nieminen, “Momentum Distributions of Electron-Positron Pairs Annihilating at Vacancy Clusters in Si,” Phys. Rev. B, vol. 57, no. 13, 7621–7627 (1998).
T. E. M. Staab, A. Sieck, M. Haugk, M. J. Puska, T. Frauenheim, and H. S. Leipner, “Stability of Large Vacancy Clusters in Silicon,” Phys. Rev. B, vol. 65, 115210 (2002).
U. Lindefelt, “Symmetric Lattice Distortions around Deep–Level Impurities in Semiconductors: Vacancy and Substitutional Cu in Silicon,” Phys. Rev. B, vol. 28, no. 8, 4510–4518 (1983).
M. Scheffler, J. P. Vigneron, and G. B. Bachelet, “Total-Energy Gradients and Lattice Distortions at Point Defects in Semiconductors,” Phys. Rev. B, vol. 31, no. 10, 6541–6551 (1985).
G. A. Samara, “Breathing-Mode Lattice Relaxation Associated with the Vacancy and Phosphorus-Vacancy-Pair (E-Center) Defect in Silicon,” Phys. Rev. B, vol. 37, no. 14, 8523–8526 (1988).
P. J. Kelly, R. Car, and S. T. Pantelides, “Theoretical Determination of the Vacancy Migration Energy in Silicon,” in: Defects in Semiconductors 14, edited by H. J. von Bardeleben, Materials Science Forum, vol. 10-12, 115–120 (1986).
A. Antonelli and J. Bernholc, “Pressure Effects on Self-Diffusion in Silicon,” Phys. Rev. B, vol. 40, no. 15, 10643–10646 (1989).
P. J. Kelly and R. Car, “Green’s-Matrix Calculation of Total Energies of Point Defects in Silicon,” Phys. Rev. B, vol. 45, no. 12, 6543–6563 (1992).
O. Sugino and A. Oshiyama, “Vacancy in Si: Successful Description within the Local-Density Approximation,” Phys. Rev. Lett., vol. 68, no. 12, 1858–1861 (1992).
J. Zhu, L. H. Yang, C. Mailhiot, T. D. de la Rubia, and G. H. Gilmer, “Ab Initio Pseudopotential Calculations of Point Defects and Boron Impurity in Silicon,” in: Computer Simulation of Radiation Effects in Solids, edited by T. Diaz de la Rubia, G. H. Gilmer, and M.-J. Caturla, Nuclear Instruments and Methods in Physics Research B, vol. 102, 29–32 (1995).
A. Oshiyama, M. Saito, and O. Sugino, “Covalency, Elasticity and Electron Correlation in Si Vacancies,” Applied Surface Science, vol. 85, 239–245 (1995).
H. Seong and L. J. Lewis, “First-Principles Study of the Structure and Energetics of Neutral Divacancies in Silicon,” Phys. Rev. B, vol. 53, no. 15, 9791–9796 (1996).
S. Ögüt, H. Kim, and J. R. Chelikowsky, “Ab Initio Cluster Calculations for Vacancies in Bulk Si,” Phys. Rev. B, vol. 56, no. 18, R11353–R11356 (1997).
J. L. Mercer, J. S. Nelson, A. F. Wright, and E. B. Stechel, “Ab Initio Calculations of the Energetics of the Neutral Si Vacancy Defect,” Modelling Simul. Mater. Sci. Eng., vol. 6, 1–8 (1998).
M. J. Puska, S. Pöykkö, M. Pesola, and R. M. Nieminen, “Convergence of Supercell Calculations for Point Defects in Semiconductors: Vacancy in Silicon,” Phys. Rev. B, vol. 58, no. 3, 1318–1325 (1998).
A. Antonelli, E. Kaxiras, and D. J. Chadi, “Vacancy in Silicon Revisited: Structure and Pressure Effects,” Phys. Rev. Lett., vol. 81, no. 10, 2088–2091 (1998).
J. Xie and S. P. Chen, “Interaction Potentials for Vacancy-Assisted As Diffusion in Silicon,” J. Phys.: Condens. Matter, vol. 11, no. 38, 7219–7226 (1999).
S. Ögüt and J. R. Chelikowsky, “Ab Initio Investigation of Point Defects in Bulk Si and Ge Using a Cluster Method,” Phys. Rev. B, vol. 64, 245206 (2001).
M. I. J. Probert and M. C. Payne, “Improving the Convergence of Defect Calculations in Supercells: An Ab Initio Study of the Neutral Silicon Vacancy,” Phys. Rev. B, vol. 67, 075204 (2003).
N. H. Nachtrieb and G. S. Handler, “A Relaxed Vacancy Model for Diffusion in Crystalline Metals,” Acta Metallurgica, vol. 2, 797–802 (1954).
J. A. Van Vechten, “Extended Amorphous Vacancies, an Alternative to the Self-Interstitial in Si,” in: Thirteenth International Conference on Defects in Semiconductors, edited by L. C. Kimerling and J. M. Parsey, Jr., The Metallurgical Society of AIME, 293–299 (1985).
B. J. Masters, “Semivacancy Pair in Crystalline Silicon,” Solid State Communications, vol. 9, 283–286 (1971).
M. Lannoo and J. C. Bourgoin, “On the Self Diffusion Entropy in Silicon,” Solid State Communications, vol. 32, 913–917 (1979).
S. T. Pantelides, “Temperature Effects in Atomic Diffusion in Silicon,” Phys. Rev. B, vol. 36, no. 6, 3462–3464 (1987).
R. Car, P. Blöchl, and E. Smargiassi, “Ab-initio Molecular Dynamics of Semiconductor Defects,” in: Defects in Semiconductors 16, edited by G. Davies, G. G. DeLeo, and M. Stavola, Materials Science Forum, vol. 83-87, 433–446 (1992).
H. Bracht, J. Fage Pedersen, N. Zangenberg, A. Nylandsted Larsen, E. E. Haller, G. Lulli, and M. Posselt, “Radiation Enhanced Silicon Self-Diffusion and the Silicon Vacancy at High Temperatures,” Phys. Rev. Lett., vol. 91, 245502 (2003).
Y. Okada, “Concentration of Native Point Defects in Si Single Crystals at High Temperatures,” Phys. Rev. B, vol. 41, no. 15, 10741–10743 (1990).
G. D. Watkins, “The Lattice Vacancy in Silicon,” in: Deep Centers in Semiconductors, edited by S. T. Pantelides, New York: Gordon and Breach Science Publishers, 147–181 (1986).
L.Elstner and W. Kamprath, “Quenched-in Levels in p-Type Silicon,” phys. stat. sol., vol. 22, 541–547 (1967).
C. B. Collins and R. O. Carlson, “Properties of Silicon Doped with Iron or Copper,” Phys. Rev., vol. 108, no. 6, 1409–1414 (1957).
Y. H. Lee, R. L. Kleinhenz, and J. W. Corbett, “EPR Studies on Quenched-in Defects in Silicon,” in: Defects and Radiation Effects in Semiconductors, 1978, edited by J. H. Albany, Inst. Phys. Conf. Sen, no. 46, 521–527 (1979).
H. Feichtinger, J. Waltl, and A. Gschwandtner, “Localization of the FeO-Level in Silicon,” Solid State Communications, vol. 27, 867–871 (1978).
K. Graff and H. Pieper, “The Properties of Iron in Silicon,” J. Electrochem. Soc, vol. 128, no. 3, 669–674 (1981).
B. I. Boltaks and S. I. Budarina, “Thermal Defects in Silicon,” Sov. Phys. Solid State, vol. 11, no. 2, 330–333 (1969).
A. Chantre, M. Kechouane, and D. Bois, “Vacancy-Diffusion Model for Quenched-in E-Centers in CW Laser Annealed Virgin Silicon,” in: Proceedings of the 12 th International Conference on Defects in Semiconductors, edited by C. A. J. Ammerlaan, Physica, vol. 116B, 547–552 (1983).
A. Chantre, M. Kechouane, G. Auvert, and D. Bois, “Influence of Scan Speed on Deep Level Defects in CW Laser Annealed Silicon,” Appl. Phys. Lett., vol. 43, no. 1, 98–100 (1983).
A. Chantre, “Defects in Ultrafast Quenched Aluminum-Doped Silicon,” Appl. Phys. Lett., vol. 46, no. 3, 263–265 (1985).
N. Fukata, A. Kasuya, and M. Suezawa, “Vacancy Formation Energy of Silicon Determined by a New Quenching Method,” Jpn. J. Appl. Phys., Part 2, vol. 40, no. 8B, L854–L856 (2001).
J. Throwe, T. C. Leung, B. Nielsen, H. Huomo, and K. G. Lynn, “Search for Thermally Generated Monovacancies in Silicon Using Monoenergetic Positrons,” Phys. Rev. B, vol. 40, no. 17, 12037–12040 (1989).
P. Hautojärvi, K. Saarinen, J. Mäkinen, and C. Corbel, “Vacancies and Vacancy Defects in Si Observed by Positron Annihilation,” in: Diffusion in Silicon, edited by D. J. Fisher, Defect and Diffusion Forum, vol. 153-155, 97–110 (1998).
B. J. Masters and E. F. Gorey, “Proton-Enhanced Diffusion and Vacancy Migration in Silicon,” J. Appl. Phys., vol. 49, no. 5, 2717–2724 (1978).
M. Budil, M. Heinrich, M. Schrems, and H. Pötzl, “Determination of the Physical Properties of Point Defects in Silicon from Back-Side Oxidation Experiments,” J. Electrochem. Soc, vol. 137, no. 12, 3931–3934 (1990).
H. Zimmermann and H. Ryssel, “Gold and Platinum Diffusion: The Key to the Understanding of Intrinsic Point Defect Behavior in Silicon,” Appl. Phys. A, vol. 55, 121–134 (1992).
H. Zimmermann and H. Ryssel, “Direct Determination of Point-Defect Equilibrium Concentrations,” Phys. Rev. B, vol. 44, no. 16, 9064–9067 (1991).
H. Zimmermann, “Accurate Measurement of the Vacancy Equilibrium Concentration in Silicon,” Appl Phys. Lett., vol. 59, no. 24, 3133–3135 (1991).
H.-J. Gossmann, C. S. Rafferty, A. M. Vredenberg, H. S. Luftman, F. C. Unterwald, D. J. Eaglesham, D. C. Jacobson, T. Boone, and J. M. Poate, “Time Dependence of Dopant Diffusion in Delta-Doped Si Films and Properties of Si Point Defects,” Appl Phys. Lett., vol. 64, no. 3, 312–314 (1994).
T. Y. Tan, P. Plekhanov, and U. M. Gösele, “Nucleation Barrier of Voids and Dislocation Loops in Silicon,” Appl Phys. Lett., vol. 70, no. 13, 1715–1717 (1997).
M. Jacob, P. Pichler, M. Wohs, H. Ryssel, and R. Falster, “Influence of RTP on Vacancy Concentrations,” in: Semiconductor Process and Device Performance Modelling, edited by S. T. Dunham and J. S. Nelson, Mat. Res. Soc. Symp. Proc, vol. 490, 129–134 (1998).
R. F. Scholz, P. Werner, U. Gösele, and T. Y. Tan, “The Contribution of Vacancies to Carbon Out-Diffusion in Silicon,” Appl. Phys. Lett., vol. 74, no. 3, 392–394 (1999).
T. Okino and T. Shimozaki, “Thermal Equilibrium Concentrations and Diffusivities of Intrinsic Point Defects in Silicon,” in: 20 th International Conference on Defects in Semiconductors, edited by C. Van de Walle and W. Walukiewicz, Physica B, vol. 273-274, 509–511 (1999).
K. Nakamura, T. Saishoji, and J. Tomioka, “Simulation of the Point Defect Diffusion and Growth Condition for Defect Free Cz Silicon Crystal,” in: Semiconductor Silicon 2002, edited by H. R. Huff, L. Fabry, and S. Kishino, Electrochem. Soc. Proc, vol. 2002-2, 554–566 (2002).
D. C. Mueller, E. Alonso, and W. Fichtner, “Arsenic Deactivation in Si: Electronic Structure and Charge States of Vacancy-Impurity Clusters,” Phys. Rev. B, vol. 68, 045208 (2003).
R. Car, P. J. Kelly, A. Oshiyama, and S. T. Pantelides, “Microscopic Theory of Atomic Diffusion Mechanisms in Silicon,” Phys. Rev. Lett., vol. 52, no. 20, 1814–1817 (1984).
Y. Bar-Yam and J. D. Joannopoulos, “Intrinsic Defects in Silicon: Formation and Migration Barriers,” in: 17 th International Conference on the Physics of Semiconductors, edited by J. D. Chadi and W A. Harrison, New York: Springer-Verlag, 721–724 (1985).
R. Car, P. J. Kelly, A. Oshiyama, and S. T. Pantelides, “Microscopic Theory of Self-Diffusion and Impurity Diffusion in Silicon,” in: Thirteenth International Conference on Defects in Semiconductors, edited by L. C. Kimerling and J. M. Parsey, Jr., The Metallurgical Society of AIME, 269–275 (1985).
C. S. Nichols, C. G. van de Walle, and S. T. Pantelides, “Mechanisms of Dopant Impurity Diffusion in Silicon,” Phys. Rev. B, vol. 40, no. 8, 5484–5496 (1989).
P. E. Blöchl, D. B. Laks, S. T. Pantelides, E. Smargiassi, R. Car, W Andreoni, and M. Parinello, “First-Principles Calculations of Self-Diffusion Coefficients in Silicon,” in: 20 th International Conference on the Physics of Semiconductors, edited by E. M. Anastassakis and J. D. Joannopoulos, Singapore: World Scientific, 533–536 (1990).
J. L. Hastings, S. K. Estreicher, and P. A. Fedders, “Vacancy Aggregates in Silicon,” Phys. Rev. B, vol. 56, no. 16, 10215–10220 (1997).
A. Zywietz, J. Furthmüller, and F. Bechstedt, “The Jahn-Teller Effect and the Structure of Monovacancies in Si, SiC and C,” in: Defects in Semiconductors 19, edited by G. Davies and M. H. Nazaré, Materials Science Forum, vol. 258-263, 653–658 (1997).
J. Zhu, “Ab Initio Pseudopotential Calculations of Dopant Diffusion in Si,” Comput. Mater. Sci., vol. 12, 309–318 (1998).
J. S. Nelson, P. A. Schultz, and A. F. Wright, “Valence and Atomic Size Dependent Exchange Barriers in Vacancy-Mediated Dopant Diffusion,” Appl. Phys. Lett., vol. 73, no. 2, 247–249 (1998).
J. Xie and S. P. Chen, “Ab Initio Calculations of Point Defects in Silicon,” in: Multiscale Modeling of Materials, edited by V. V. Bulatov, T. Diaz de la Rubia, R. Phillips, E. Kaxiras, and N. Ghoniem, Mat. Res. Soc. Symp. Proc, vol. 538, 389–394 (1999).
J. Coutinho, R. Jones, P. R. Briddon, and S. Öberg, “Oxygen and Dioxygen Centers in Si and Ge: Density-Functional Calculations,” Phys. Rev. B, vol. 62, no. 16, 10824–10840 (2000).
X.-Y. Liu, W. Windl, K. M. Beardmre, and M. P. Masquelier, “First-Principles Study of Phosphorus Diffusion in Silicon: Interstitial and Vacancy-Mediated Diffusion Mechanisms,” Appl. Phys. Lett, vol. 82, no. 12, 1839–1841 (2003).
G. D. Watkins, “The Interaction of Irradiation-Produced Defects with Impurities and Other Defects in Semiconductors EPR Studies in Silicon,” in: Colloque international sur l’action des rayonnements sur les composants a semiconducteurs, edited by F. Cambou, C. Fert, and J. Lagasse, Al/1–13 (1967).
B. L. Gregory and H. H. Sander, “Injection Dependence of Transient Annealing in Neutron-Irradiated Silicon Devices,” IEEE Trans. Nuclear Science, vol. 14, no. 6, 116–126 (1967).
H. J. Stein and F. L. Vook, “Transient Radiation Defects,” in: Colloque international sur l’action des rayonnements sur les composants a semiconducteurs, edited by F. Cambou, C. Fert, and J. Lagasse, A3/1–21 (1967).
D. Binder, D. T. Butcher, J. R. Crepps, and E. L. Hammer, “Rapid Annealing in Silicon Transistors,” IEEE Trans. Nuclear Science, vol. NS-15, no. 6, 84–87 (1968).
J. R. Srour, “Short-Term Annealing in Electron-Irradiated p-Type Silicon,” IEEE Trans. Nuclear Science, vol. NS-17, no. 6, 118–122 (1970).
S. N. Ershov, V. V. Panteleev, S. N. Nagornykh, and V. V. Chernyakhovskii, “Migration Energy of Intrinsic Point Defects in Different Charge States in Silicon and Germanium,” Sov. Phys. Solid State, vol. 19, no. 1, 187 (1977).
V. A. Panteleev, S. N. Ershov, and Y. L. Kalinkin, “Investigation of the Migration of Primary Radiation Defects in Silicon in the Temperature Range from 200 to 400 °C (russ.),” in: Radiation Physics of Semiconductors and Related Materials, 1979, edited by G. P. Kekelidze and V. I. Shakhovtsov, Tbilisi: Tbilisi State University Press, 497–500 (1980).
P. Partyka, Y. Zhong, K. Nordlund, R. S. Averback, I. M. Robinson, and P. Ehrhart, “Grazing Incidence Diffuse X-Ray Scattering Investigation of the Properties of Irradiation-Induced Point Defects in Silicon,” Phys. Rev. B, vol. 64, 235207 (2001).
V. A. Panteleev, S. N. Ershov, V. V. Chernyakhovskii, and S. N. Nabornykh, “Determination of the Migration Energy of Vacancies and of Intrinsic Interstitial Atoms in Silicon in the Temperature Interval 400-600 °K,” JETP Lett, vol. 23, no. 12, 633–635 (1976).
K. L. Wang, Y.H. Lee, and J. W. Corbett, “Defect Distribution near the Surface of Electron-Irradiated Silicon,” Appl. Phys. Lett., vol. 33, no. 6, 547–548 (1978).
F. Priolo, V. Privitera, S. Coffa, and S. Libertino, “Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena,” in: Materials Modification and Synthesis by Ion Beam Processing, edited by D. E. Alexander, N. W. Cheung, B. Park, and W. Skorupa, Mat. Res. Soc. Symp. Proc, vol. 438, 53–64 (1997).
A. Hallen, N. Keskitalo, and B. G. Svensson, “Diffusion and Reaction Kinetics of Fast-Ion-Induced Point Defects Studied by Deep Level Transient Spectroscopy,” in: Diffusion in Silicon, edited by D. J. Fisher, Defect and Diffusion Forum, vol. 153-155, 193–204 (1998).
S. Coffa and S. Libertino, “Room Temperature Diffusivity of Self-Interstitials and Vacancies in Ion-Implanted Si Probed by In-Situ Measurements,” Appl. Phys. Lett., vol. 73, no. 23, 3369–3371 (1998).
S. Libertino and S. Coffa, “Room Temperature Point Defect Migration in Crystalline Si,” in: Gettering and Defect Engineering in Semiconductor Technology GADEST 2001, edited by V. Raineri, F. Priolo, M. Kittler, and H. Richter, Solid State Phenomena, vol. 82-84, 207–212 (2002).
A. Nylandsted Larsen, C. Christensen, and J. Wulff Petersen, “Room-Temperature Vacancy Migration in Crystalline Si from an Ion-Implanted Surface Layer,” J. Appl. Phys., vol. 86, no. 9, 4861–4864 (1999).
K. Kyllesbech Larsen, V. Privitera, S. Coffa, F. Priolo, S. U. Campisano, and A. Camera, “Trap-Limited Migration of Si Self-Interstitials at Room Temperature,” Phys. Rev. Lett., vol. 76, no. 9, 1493–1496 (1996).
S. M. Hu, “On Interaction Potential, Correlation Factor, Vacancy Mobility, and Activation Energy of Impurity Diffusion in Diamond Lattice,” phys. stat. sol. (b), vol. 60, 595–603 (1973).
L. I. Fedina and A. L. Aseev, “Study of Interaction of Point Defects with Dislocations in Silicon by Means of Irradiation in an Electron Microscope,” phys. stat. sol. (a), vol. 95, 517–529 (1986).
P. B. Griffin, P. A. Packan, and J. D. Plummer, “Consistent Models for Point Defects in Silicon,” in: 1991 International Workshop on VLSI Process and Device Modeling (1991 VPAD), Japan: Society of Applied Physics, 4–7 (1991).
T. Okino, “Behavior of Self-Interstitials and Vacancies in Silicon,” in: Diffusion in Materials DIMAT-92, edited by M. Koiwa, K. Hirano, H. Nakajima, and T. Okada, Defect and Diffusion Forum, vol. 95-98, 961–966 (1993).
T. Shimizu, Y. Zatisu, S. Matsumoto, E. Arai, M. Yoshida, and T. Abe, “Determination of Vacancy Diffusivity in Silicon for Process Simulation,” in: Simulation of Semiconductor Devices and Processes, Vol 6, edited by H. Ryssel and P. Pichler, Vienna: Springer-Verlag, 444–447 (1995).
A. M. Eidenzon and N. I. Puzanov, “Native Point Defects in Silicon at High Temperatures,” Inorganic Materials, vol. 31, no. 9, 1043–1048 (1995).
T. K. Mogi, M. O. Thompson, H.-J. Gossmann, J. M. Poate, and H. S. Luftman, “Thermal Nitridation Enhanced Diffusion of Sb and Si(100) Doping Superlattices,” Appl Phys. Lett., vol. 69, no. 9, 1273–1275 (1996).
N. I. Puzanov, A. E. Eindenzon, and D. N. Puzanov, “Modelling Microdefect Distribution in Dislocation-Free Si Crystals Grown from the Melt,” J. Crystal Growth, vol. 178, 468–78 (1997).
T. Okino and T. Shimozaki, “Analysis of Dopant Diffusion in Si with Stacking Faults,” Materials Transactions, JIM, vol. 40, no. 6, 474–478 (1999).
J. L. Ngau, P. B. Griffin, and J. D. Plummer, “Modeling the Suppression of Boron Transient Enhanced Diffusion in Silicon by Substitutional Carbon Incorporation,” J. Appl. Phys., vol. 90, no. 4, 1768–1778 (2001).
O. Sugino and A. Oshiyama, “Pressure Dependence of Formation and Migration Enthalpies for Atomic Diffusion in Si: Conjugate Gradient Minimization of Total Energy,” in: Defects in Semiconductors 16, edited by G. Davies, G. G. DeLeo, and M. Stavola, Materials Science Forum, vol. 83-87, 469–174 (1992).
J. A. Van Vechten, “Activation Enthalpy of Recombination-Enhanced Vacancy Migration in Si,” Phys. Rev. B, vol. 38, no. 14, 9913–9919 (1988).
A. Hallen, N. Keskitalo, F. Masszi, and V. Nâgl, “Lifetime in Proton Irradiated Silicon,” J. Appl. Phys., vol. 79, no. 8, 3906–3014 (1996).
H. Bleichner, P. Jonsson, N. Keskitalo, and E. Nordlander, “Temperature and Injection Dependence of the Shockley-Read-Hall Lifetime in Electron Irradiated n-Type Silicon,” J. Appl. Phys., vol. 79, no. 12, 9142–9148 (1996).
S. J. Watts, J. Matheson, I. H. Hopkins-Bond, A. Holmes-Siedle, A. Mohammadzadeh, and R. Pace, “A New Model for Generation-Recombination in Silicon Depletion Regions after Neutron Irradiation,” IEEE Trans. Nuclear Science, vol. 43, no. 6, 2587–2594 (1996).
B. MacEvoy, K. Gill, and G. Hall, “Defect-Engineering Rad-Hard Detectors for the CERN LHC,” in: Defects in Semiconductors 19, edited by G. Davies and M. H. Nazaré, Materials Science Forum, vol. 258-263, 671–676 (1997).
J. W. Corbett and G. D. Watkins, “Silicon Divacancy and Its Direct Production by Electron Irradiation,” Phys. Rev. Lett., vol. 7, no. 8, 314–316 (1961).
G. Bemski, B. Szymanski, and K. Wright, “A New Paramagnetic Center in Electron Irradiated Silicon,” J. Phys. Chem. Solids, vol. 24, 1–6 (1963).
P. R. Brosious, “EPR of a Spin-1 Two-Vacancy Defect in Electron-Irradiated Silicon,” in: Defects and Radiation Effects in Semiconductors, 1978, edited by J. H. Albany, Inst. Phys. Conf. Sen, no. 46, 248–257 (1979).
E. G. Sieverts and J. W. Corbett, “The Neutral Divacancy in Silicon,” Solid State Communications, vol. 43, no. 1, 41–46 (1982).
G. D. Watkins and J. W. Corbett, “Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy,” Phys. Rev., vol. 138, no. 2A, A543–A555 (1965).
J. G. de Wit, E. G. Sieverts, and C. A. J. Ammerlaan, “Divacancy in Silicon: Hyperfine Interactions from Electron-Nuclear Double Resonance Measurements,” Phys. Rev. B, vol. 14, no. 8, 3494–3503 (1976).
E. G. Sieverts, S. H. Muller, and C. A. J. Ammerlaan, “Divacancy in Silicon: Hyperfine Interactions from Electron-Nuclear Double-Resonance Measurements. II,” Phys. Rev. B, vol. 18, no. 12, 6834–6848 (1978).
L. Dobaczewski, K. Goscinski, Z. R. Zytkiewicz, K. Bonde Nielsen, L. Rubaldo, O. Andersen, and A. R. Peaker, “Piezoscopic Deep-Level Transient Spectroscopy Studies of the Silicon Divacancy,” Phys. Rev. B, vol. 65, 113203 (2002).
Y. Nagai, K. Inoue, Z. Tang, I. Yonenaga, T. Chiba, M. Saito, and M. Hasegawa, “Jahn-Teller Distortion of Neutral Divacancy in Si Studied by Positron Annihilation Spectroscopy,” in: Proceedings of the 22 nd International Conference on Defects in Semiconductors, edited by K. Bonde Nielsen, A. Nylandsted Larsen, and G. Weyer, Physica B, vol. 340-342, 518–522 (2003).
E. G. Sieverts, S. H. Muller, and C. A. J. Ammerlaan, “On the Production of Paramagnetic Defects in Silicon by Electron Irradiation,” Solid State Communications, vol. 28, 221–225 (1978).
J. W. Corbett, J. P. Karins, and T. Y. Tan, “Ion-Induced Defects in Semiconductors,” Nuclear Instruments and Methods in Physics Research, vol. 182/183, 457–76 (1981).
L. J. Cheng, J. C. Corelli, J. W. Corbett, and G. D. Watkins, “1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the Divacancy,” Phys. Rev., vol. 152, no. 2, 761–774 (1966).
H. Y. Fan and A. K. Ramdas, “Infrared Absorption and Photoconductivity in Irradiated Silicon,” J. Appl. Phys., vol. 30, no. 8, 1127–1134 (1959).
L. J. Cheng and P. Vadja, “Effect of Polarized Light on the 1.8-, 3.3-, and 3.9-μ Radiation-Induced Absorption Bands in Silicon,” Phys. Rev., vol. 186, no. 3, 816–823 (1969).
J. H. Svensson, B. G. Svensson, and B. Monemar, “Infrared Absorption Studies of the Divacancy in Silicon: New Properties of the Singly Negative Charge State,” Phys. Rev. B, vol. 38, no. 6, 4192–4197 (1988).
B. G. Svensson, K. Johnsson, D.-X. Xu, J. H. Svensson, and J. L. Lindström, “Annealing of Divacancy-Related Infrared Absorption Bands in Boron-Doped Silicon,” Radiation Effects and Defects in Solids, vol. 111/112, no. 1-2, 439–447 (1989).
L. J. Cheng, “3.9μ Photoconductivity Band in Neutron-Irradiated p-Type Silicon,” Phys. Lett. A, vol. 24, no. 13, 729–731 (1967).
A. H. Kalma and J. C. Corelli, “Photoconductivity Studies of Defects in Silicon: Divacancy-Associated Energy Levels,” Phys. Rev., vol. 173, no. 3, 734–745 (1968).
C. S. Chen and J. C. Corelli, “Infrared Spectroscopy of Divacancy-Associated Radiation-Induced Absorption Bands in Silicon,” Phys. Rev. B, vol. 5, no. 4, 1505–1517 (1972).
F. Carton-Merlet, B. Pajot, and P. Vajda, “Detection of the Photopopulation and Photoionisation of Intrinsic Point Defects in Irradiated Silicon by IR Absorption,” in: Defects and Radiation Effects in Semiconductors, 1978, edited by J. H. Albany, Inst. Phys. Conf. Sen, no. 46, 311–316 (1979).
A. O. Evwaraye and E. Sun, “Electron-Irradiation-Induced Divacancy in Lightly Doped Silicon,” J. Appl. Phys., vol. 47, no. 9, 3776–3780 (1976).
J. H. Evans-Freeman, A. R. Peaker, I. D. Hawkins, P. Y. Y. Kan, J. Terry, L. Rubaldo, M. Ahmed, S. Watts, and L. Dobaczewski, “High-Resolution DLTS Studies of Vacancy-Related Defects in Irradiated and in Ion-Implanted n-Type Silicon,” Materials Science in Semiconductor Processing, vol. 3, 237–241 (2000).
H. Kauppinen, C. Corbel, K. Skog, K. Saarinen, T. Laine, P. Hautojäautrvi, P. Desgardin, and E. Ntsoenzok, “Divacancy and Resistivity Profiles in n-Type Si Implanted with 1.15-MeV Protons,” Phys. Rev. B, vol. 55, no. 15, 9598–9608 (1997).
H. Kauppinen, C. Corbel, J. Nissilä, K. Saarinen, and P. Hautojärvi, “Photoionization of the Silicon Divacancy Studied by Positron-Annihilation Spectroscopy,” Phys. Rev. B, vol. 57, no. 20, 12911–12922 (1998).
B. G. Svensson, B. Mohadjeri, A. Hallen, J. H. Svensson, and J. W. Corbett, “Divacancy Acceptor Levels in Ion-Irradiated Silicon,” Phys. Rev. B, vol. 43, no. 3, 2292–2298 (1991).
P. V. Kuchinskii and V. M. Lomako, “On the Mechanism of Primary Radiation Defect Annihilation in Si,” phys. stat. sol. (a), vol. 102, 653–658 (1987).
B. G. Svensson and M. Willander, “Generation of Divacancies in Silicon Irradiated by 2-MeV Electrons: Depth and Dose Dependence,” J. Appl. Phys., vol. 62, no. 7, 2758–2762 (1987).
A. Hallen, B. U. R. Sundqvist, Z. Paska, B. G. Svensson, M. Rosling, and J. Tirén, “Deep Level Transient Spectroscopy Analysis of Fast Ion Tracks in Silicon,” J. Appl. Phys., vol. 67, no. 3, 1266–1271 (1990).
Y. Tokuda, N. Shimizu, and A. Usami, “Studies of Neutron-Produced Defects in Silicon by Deep-Level Transient Spectroscopy,” Jpn. J. Appl. Phys., vol. 18, no. 2, 309–315 (1979).
A. V. Vasil’ev, S. A. Smagulova, and S. S. Shaimeev, “Capacitance Spectroscopy Investigation of Defects Formed in n-Type Silicon by Neutron Irradiation,” Sov. Phys. Semicond., vol. 16, no. 11, 1279–1281 (1982).
B. G. Svensson, C. Jagadish, A. Hallen, and J. Lalita, “Generation of Vacancy-Type Point Defects in Single Collision Cascades during Swift-Ion Bombardment of Silicon,” Phys. Rev. B, vol. 55, 10498–10507 (1997).
E. V. Monakhov, J. Wong-Leung, A. Y. Kuznetsov, C. Jagadish, and B. G. Svensson, “Ion Mass Effect on Vacancy-Related Deep Levels in Si Induced by Ion Implantation,” Phys. Rev. B, vol. 65, 245201 (2002).
P. K. Giri, “Metastability of Interstitial Clusters in Ion-Damaged Silicon Studied by Isothermal Capacitance Transient Spectroscopy,” Defect and Diffusion Forum, vol. 210-212, 1–13 (2002).
B. V. Shemaev, “Positions of Acceptor Levels of a Divacancy in the Band Gap of n-Type Silicon Irradiated with 6.3 MeV Protons,” Sov. Phys. Semicond., vol. 17, no. 11, 1254–1255 (1983).
L. A. Kazakevich, V. I. Kuznetsov, and P. F. Lugakov, “On the Nature of the Radiation Defects with Level E c-0.22 eV in n-Type Silicon,” Radiation Effects Letters, vol. 87, 147–154 (1986).
A. V. Vasil’ev, L. S. Smirnov, and S. S. Shaïmeev, “Divacancy Levels in the Band Gap of Silicon,” Sov. Phys. Semicond., vol. 20, no. 4, 465–467 (1986).
F. P. Korshunov, V. P. Markevich, I. F. Medvedeva, and L. I. Murin, “Acceptor Levels of a Divacancy in Silicon,” Sov. Phys. Semicond., vol. 26, no. 11, 1129–1131 (1992).
C. A. Londos, “Divacancy Production in Low-Temperature Electron-Irradiated Silicon,” Phys. Rev. B, vol. 35, no. 14, 7511–7514 (1987).
M.-A. Trauwaert, J. Vanhellemont, H. E. Maes, A.-M. Van Bavel, G. Langouche, A. Stesmans, and P. Clauws, “Influence of Oxygen and Carbon on the Generation and Annihilation of Radiation Defects in Silicon,” Materials Science and Engineering B, vol. 36, 196–199 (1996).
I. D. Konozenko, A. K. Semenyuk, and V. I. Khivrich, “Radiation Defects Created by Co60 γ-Rays in p- and n-Type Si of High Purity,” phys. stat. sol., vol. 35, 1043–1052 (1969).
M. T. Lappo and V. D. Tkachev, “Divacancies in Silicon Irradiated with Fast Neutrons,” Sov. Phys. Semicond., vol. 4, no. 11, 1882–1884 (1971).
J. Krynicki, J. C. Bourgoin, and G. Vassal, “Energy Dependence of Defect Energy Levels in Electron Irradiated Silicon,” Revue Phys. Appl., vol. 14, 481–484 (1979).
J. M. Meese, M. Chandrasekhar, D. L. Cowan, S. L. Chang, H. Yousif, H. R. Chandrasekhar, and P. McGrail, “Defect Production during Neutron Doping of Si,” in: Neutron-Transmutation-Doped Silicon, edited by J. M. Meese, New York: Plenum Press, 101–140 (1981).
S. D. Brotherton and P. Bradley, “Defect Production and Lifetime Control in Electron and gamma-Irradiated Silicon,” J. Appl. Phys., vol. 53, no. 8, 5720–5732 (1982).
P. Hazdra and J. Vobecky, “Nondestructive Defect Characterization and Engineering in Contemporary Silicon Power Devices,” in: Gettering and Defect Engineering in Semiconductor Technology GADEST99, edited by H. G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler, and H. Richter, Solid State Phenomena, vol. 69-70, 545–550 (1999).
E. V. Monakhov, B. S. Avset, A. Hallen, and B. G. Svensson, “Formation of a Double Acceptor Center during Divacancy Annealing in Low-Doped High-Purity Oxygenated Si,” Phys. Rev. B, vol. 65, 233207 (2002).
P. M. Mooney, L. J. Cheng, M. Siili, J. D. Gerson, and J. W. Corbett, “Defect Energy Levels in Boron-Doped Silicon Irradiated with 1-MeV Electrons,” Phys. Rev. B, vol. 15, no. 8, 3836–3843 (1977).
Y. H. Lee, K. L. Wang, A. Jaworoski, P. M. Mooney, L. J. Cheng, and J. W. Corbett, “A Transient Capacitance Study of Radiation-Induced Defects in Aluminum-Doped Silicon,” phys. stat. sol. (a), vol. 57, 697–704 (1980).
M. Stavola and L. C. Kimerling, “Symmetry Determination for Deep States in Semiconductors from Stress-Induced Dichroism of Photocapacitance,” J. Appl. Phys., vol. 54, no. 7, 3897–3901 (1983).
M. Asghar, M. Zafar Iqbal, and N. Zafar, “Study of Alpha-Radiation-Induced Deep Levels in p-Type Silicon,” J. Appl. Phys., vol. 73, no. 9, 4240–4247 (1993).
A. Khan, M. Yamaguchi, S. J. Taylor, T. Hisamatsu, and S. Matsuda, “Effects of Annealing on Type Converted Si and Space Solar Cells Irradiated with Heavy Fluence 1 MeV Electrons,” Jpn. J. Appl Phys., Part 1, vol. 38, no. 5A, 2679–2685 (1999).
M. Shimotomai, Y. Ohgino, H. Fukushima, Y. Nagayasu, T. Mihara, K. Inoue, and M. Doyama, “The Utility of Positrons for Studies of Vacancy-Type Defects in Semiconductors,” in: Defects and Radiation Effects in Semiconductors, 1980, edited by R. R. Hasiguti, Inst. Phys. Conf. Ser., no. 59, 241–246 (1981).
Motoko Kwete, D. Segers, M. Dorikens, L. Dorikens-Vanpraet, and P. Clauws, “Positron Annihilation Study of Defects Created in Silicon Irradiated with Electrons of High Energy,” phys. stat. sol. (a), vol. 122, 129–138 (1990).
A. Kawasuso, M. Hawegawa, M. Suezawa, S. Yamauchi, and K. Sumino, “An Annealing Study of Defects Induced by Electron Irradiation of Czochralski-Grown Si Using a Positron Lifetime Technique,” Applied Surface Science, vol. 85, 280–286 (1995).
M. Hasegawa, A. Kawasuso, T. Chiba, T. Akahane, M. Suezawa, S. Yamaguchi, and K. Sumino, “Positron Lifetime and 2D-AC AR Studies of Divacancies in Silicon,” Appl. Phys. A, vol. 61, 65–70 (1995).
V. Avalos and S. Dannefaer, “Positron-Annihilation Investigation of Vacancy Agglomeration in Electron-Irradiated Float-Zone Silicon,” Phys. Rev. B, vol. 54, no. 3, 1724–1728 (1996).
A. Polity, F. Börner, S. Huth, S. Eichler, and R. Krause-Rehberg, “Defects in Electron-Irradiated Si Studied by Positron-Lifetime Spectroscopy,” Phys. Rev. B, vol. 58, no. 16, 10363–10377 (1998).
R. Krause-Rehberg and H. S. Leipner, “Defect Characterization in Elemental Semiconductors: Silicon,” in: Positron Annihilation in Semiconductors, Solid-State Sciences, vol. 127, Section 4.1, Berlin: Springer, 127–182 (1999).
H. J. Stein, J. A. Knapp, and P. S. Peercy, “Divacancy Annealing in Crystalline Silicon Using E-Beam and Pulsed Ruby Laser Excitation,” in: Laser and Electron-Beam Interactions with Solids, edited by B. R. Appleton and G. K. Celler, Mat. Res. Soc. Symp. Proc, vol. 4, 319–324 (1982).
P. Pellegrino, P. Lévêque, J. Lalita, A. Hallén, C. Jagadish, and B. G. Svensson, “Annealing Kinetics of Vacancy-Related Defects in Low-Dose MeV Self-Ion-Implanted n-Type Silicon,” Phys. Rev. B, vol. 64, 195211 (2001).
A. V Vasil’ev, S. A. Smagulova, and L. S. Smirnov, “Annealing of Divacancies in Silicon Irradiated with Fast Neutrons,” Sov. Phys. Semicond., vol. 20, 354 (1986).
I. V. Antonova, A. V. Vasil’ev, V. I. Panov, and S. S. Shaimeev, “Characteristics of Annealing of Divacancies in Silicon Containing Disordered Regions,” Sov. Phys. Semicond., vol. 23, no. 6, 671–673 (1989).
S. Roorda, “Divacancy Annealing in Silicon Monitored by Differential Calorimetry and Infrared Absorption Spectroscopy,” in: Materials Synthesis and Processing Using Ion Beams, edited by R. J. Culbertson, O. W. Holland, K. S. Jones, and K. Maex, Mat. Res. Soc. Symp. Proc, vol. 316, 159–165 (1994).
R. Poirier, S. Roorda, F. Schiettekatte, M. Lalancette, and J. Zikovsky, “Divacancies in Proton Irradiated Silicon: Characterization and Annealing Mechanisms,” Physica B, vol. 308-310, 462–464 (2001).
M. Saito and A. Oshiyama, “Resonant Bonds in Symmetry-Lowering Distortion around a Si Divacancy,” Phys. Rev. Lett, vol. 73, no. 6, 866–869 (1994).
G. D. Watkins, “Comment on “Resonant Bonds in Symmetry-Lowering Distortion around a Si Divacancy” [Phys. Rev. Lett. 73, 866 (1994)],” Phys. Rev. Lett., vol. 74, no. 21, 4353 (1995).
M. Saito and A. Oshiyama, “Response to “Comment on ‘Resonant Bonds in Symmetry-Lowering Distortion around a Si Divacancy’” [Phys. Rev. Lett. 73, 866 (1994)],” Phys. Rev. Lett, vol. 74, no. 21, 4354 (1995).
M. Pesola, J. von Boehm, S. Pöykkö, and R. M. Nieminen, “Spin-Density Study of the Silicon Divacancy,” Phys. Rev. B, vol. 58, no. 3, 1106–1109 (1998).
B. J. Coomer, A. Resende, J. P. Goss, R. Jones, S. Öberg, and P. R. Briddon, “The Divacancy in Silicon and Diamond,” in: 20 th International Conference on Defects in Semiconductors, edited by C. Van de Walle and W. Walukiewicz, Physica B, vol. 213-21 A, 520–523 (1999).
T. Akiyama, Y. Okamoto, M. Saito, and A. Oshiyama, “Multivacancy and Its Hydrogen Decoration in Crystalline Si,” Jpn. J. Appl. Phys., Part 2, vol. 38, no. 12A, L1363–L1365 (1999).
G. S. Hwang and W. A. Goddard III, “Diffusion and Dissociation of Neutral Divacancies in Crystalline Silicon,” Phys. Rev. B, vol. 65, 233205 (2002).
M. Prasad and T. Sinno, “Internally Consistent Approach for Modeling Solid-State Aggregation. I. Atomistic Calculations of Vacancy Clustering in Silicon,” Phys. Rev. B, vol. 68, 045206 (2003).
S. K. Estreicher, J. Weber, A. Derecskei-Kovacs, and D. S. Marynick, “Noble-Gas-Related Defects in Si and the Origin of the 1018 meV Photoluminescence Line,” Phys. Rev. B, vol. 55, no. 8, 5037–5044 (1997).
P. K. Giri, S. Coffa, and E. Rimini, “Evidence for Small Interstitial Clusters As the Origin of Photoluminescence W Band in Ion-Implanted Silicon,” Appl. Phys. Lett, vol. 78, no. 3, 291–293 (2001).
J. Lalita, B. G. Svensson, and C. Jagadish, “Point Defects Observed in Crystalline Silicon Implanted by MeV Si Ions at Elevated Temperatures,” Nuclear Instruments and Methods in Physics Research B, vol. 96, 210–214 (1995).
Y. Nakano, M. Ishiko, and H. Tadano, “Deep Level Centers in Silicon Introduced by High-Energy He Irradiation and Subsequent Annealing,” J. Vac. Sci. Technol. B, vol. 20, no. 1, 379–381 (2002).
Y. H. Lee, Y. M. Kim, and J. W. Corbett, “New EPR Spectra in Neutron-Irradiated Silicon,” Radiation Effects, vol. 15, 77–84 (1972).
Y.-H. Lee and J. W. Corbett, “EPR Study of Defects in Neutron-Irradiated Silicon: Quenched-in Alignment under (110)-Uniaxial Stress,” Phys. Rev. B, vol. 9, no. 10, 4351–4361 (1974).
K. L. Brower, “Structure of Multiple-Vacancy (Oxygen) Centers in Irradiated Silicon,” Radiation Effects, vol. 8, 213–219 (1971).
W. Jung and G. S. Newell, “Spin-1 Centers in Neutron-Irradiated Silicon,” Phys. Rev., vol. 132, no. 2, 648–662 (1963).
M. Nisenoff and H. Y. Fan, “Electron Spin Resonance in Neutron-Irradiated Silicon,” Phys. Rev., vol. 128, no. 4, 1605–1613 (1962).
Y. H. Lee and J. W. Corbett, “EPR Studies in Neutron-Irradiated Silicon: A Negative Charge State of a Nonplanar Five-Vacancy Cluster (V-5)” Phys. Rev. B, vol. 8, no. 6, 2810–2826 (1973).
M. Brohl, C. Kisielowski-Kemmerich, and H. Alexander, “Pentavacancies in Plastically Deformed Silicon,” Appl. Phys. Lett, vol. 50, no. 24, 1733–1735 (1987).
C. G. Kirkpatrick, J. R. Noonan, and B. G. Streetman, “Recombination Luminescence from Ion Implanted Silicon,” Radiation Effects, vol. 30, 97–106 (1976).
V. D. Tkachev and A. V. Mudryi, “Radiative Recombination Centres in Silicon Irradiated by Fast Neutrons and Ions,” in: Radiation Effects in Semiconductors, 1976, edited by N. B. Urli and J. W. Corbett, Inst. Phys. Conf. Sen, no. 31, 231–243 (1977).
D. J. Chadi and K. J. Chang, “Magic Numbers for Vacancy Aggregation in Crystalline Si,” Phys. Rev. B, vol. 38, no. 2, 1523–1525 (1988).
A. van Veen, H. Schut, A. Rivera, and A. V. Fedorov, “Growth of Vacancy Clusters during Post-Irradiation Annealing of Ion Implanted Silicon,” in: Ion-Solid Interactions for Materials Modification and Processing, edited by D. B. Poker, D. lia, Y.-T. Cheng, L. R. Harriott, and T. W. Sigmon, Mat. Res. Soc. Symp. Proc, vol. 396, 155–160 (1996).
B. Hourahine, R. Jones, A. N. Safonov, S. Öberg, P. R. Briddon, and S. K. Estreicher, “Identification of the Hexavacancy in Silicon with the B480 Optical Center,” Phys. Rev. B, vol. 61, no. 19, 12594–12597 (2000).
C. E. Jones, E. S. Johnson, W. D. Compton, J. R. Noonan, and F. B. Streetman, “Temperature, Stress, and Annealing Effects on the Luminescence from Electron-Irradiated Silicon,” J. Appl. Phys., vol. 44, no. 12, 5402–5410 (1973).
A. S. Kaminskii, B. M. Leiferov, and A. N. Safonov, “Excitons Bound to Defect Complexes in Silicon,” Sov. Phys. Solid State, vol. 29, no. 4, 551–556 (1987).
R. Sauer and J. Weber, “Photoluminescence Characterization of Deep Defects in Silicon,” in: Proceedings of the 12 th International Conference on Defects in Semiconductors, edited by C. A. J. Ammerlaan, Physica, vol. 116B, 195–209 (1983).
R. Jones, B. J. Coomer, J. P. Goss, S. Öberg, and P. R. Briddon, “Intrinsic Defects and the Dl to D4 Optical Bands Detected in Plastically Deformed Si,” phys. stat. sol. (b), vol. 222, 133–140 (2000).
R. Sauer, J. Weber, J. Stolz, E. R. Weber, K.-H. Küsters, and H. Alexander, “Dislocation-Related Photoluminescence in Silicon,” Appl. Phys. A, vol. 36, 1–13 (1985).
S. Dannefaer, N. Fruensgaard, S. Kupca, B. Hogg, and D. Kerr, “A Positron Study of Plastic Deformation of Silicon,” Can. J. Phys., vol. 61, 451–459 (1983).
S. Dannefaer, D. Kerr, and B. G. Hogg, “A Study of Defects in Amorphous Silicon Films,” J. Appl. Phys., vol. 54, no. 1, 155–160 (1983).
N. M. Kulkarni, R. Kulkarni, and A. D. Shaligram, “Defect Recovery Study of e-Irradiated Silicon during Rapid Thermal Annealing,” phys. stat. sol. (a), vol. 133, 283–289 (1992).
A. Kawasuso, M. Hasegawa, M. Suezawa, S. Yamaguchi, and K. Sumino, “Annealing Processes of Vacancies in Silicon Induced by Electron Irradiation: Analysis Using Positron Lifetime,” in: Positron Annihilation, edited by Y.-J. He, B.-S. Cao, and Y. C. Jean, Materials Science Forum, vol. 175-178, 423–426 (1995).
V C. Venezia, L. Pelaz, H.-J. L. Gossmann, T. E. Haynes, and C. S. Rafferty, “Binding Energy of Vacancy Clusters Generated by High-Energy Ion Implantation and Annealing of Silicon,” Appl. Phys. Lett., vol. 79, no. 9, 1273–1275 (2001).
R. Kalyanaraman, T. E. Haynes, O. W.Holland, H.-J. L. Gossmann, C. S. Rafferty, and G. H. Gilmer, “Binding Energy of Vacancies to Clusters Formed in Si by High-Energy Ion Implantation,” Appl. Phys. Lett, vol. 79, no. 13, 1983–1985 (2001).
G. H. Gilmer, T. Diaz de la Rubia, D. M. Stock, and M. Jaraiz, “Diffusion and Interactions of Point Defects in Silicon: Molecular Dynamics Simulations,” in: Computer Simulation of Radiation Effects in Solids, edited by T. Diaz de la Rubia, G. H. Gilmer, and M.-J. Caturla, Nuclear Instruments and Methods in Physics Research B, vol. 102, 247–255 (1995).
L. Colombo, A. Bongiorno, and T. Diaz de la Rubia, “Formation and Binding Energies of Vacancy Clusters in Silicon,” in: Defects and Diffusion in Silicon Processing, edited by T. Diaz de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, Mat. Res. Soc. Symp. Proc, vol. 469, 205–210 (1997).
A. Bongiorno, L. Colombo, and T. Diaz De la Rubia, “Structural and Binding Properties of Vacancy Clusters in Silicon,” Europhysics Letters, vol. 43, no. 6, 695–700 (1998).
T. Akiyama, A. Oshiyama, and O. Sugino, “Magic Numbers of Multivacancy in Crystalline Si: Tight-Binding Studies for the Stability of the Multivacancy,” J. Phys. Soc. Japan, vol. 67, no. 12, 4110–4116 (1998).
M. Prasad and T. Sinno, “Atomistic-to-Continuum Description of Vacancy Cluster Properties in Crystalline Silicon,” Appl. Phys. Lett., vol. 80, no. 11, 1951–1953 (2002).
M. Jaraiz, G. H. Gilmer, J. M. Poate, and T. D. de la Rubia, “Atomistic Calculations of Ion Implantation in Si: Point Defect and Transient Enhanced Diffusion Phenomena,” Appl. Phys. Lett., vol. 68, no. 3, 409–441 (1996).
S. Chakravarthi and S. T. Dunham, “Modeling of Vacancy Cluster Formation in Ion Implanted Silicon,” J. Appl. Phys., vol. 89, no. 9, 4758–765 (2001).
E. I. Blount, “Energy Levels in Irradiated Germanium,” J. Appl. Phys., vol. 30, no. 8, 1218–1221 (1959).
F. Seitz, “On the Theory of Diffusion in Metals,” Acta Cryst., vol. 3, 355–363 (1950).
H. B. Huntington and F. Seitz, “Mechanism for Self-Diffusion in Metallic Copper,” Phys. Rev., vol. 61, 315–325 (1942).
W. Frank, “Self-Interstitials and Vacancies in Elemental Semiconductors between Absolute Zero and the Temperature of Melting,” Festkörperprobleme, vol. 21, 221–242 (1981).
P. S. Gwozdz and J. S. Koehler, “Changes in AC Conductivity of Silicon with Electron Irradiation at 0.5 K,” Phys. Rev. B, vol. 6, no. 12, 4571–4574 (1972).
A. Brelot, “Selective Trapping of Vacancies,” in: Radiation Damage and Defects in Semiconductors, Inst. Phys. Conf. Ser., no. 16, 191–201 (1973).
R. D. Harris and G. D. Watkins, “Interstitial Related Defects in n-Type Silicon,” in: Thirteenth International Conference on Defects in Semiconductors, edited by L. C. Kimerling and J. M. Parsey, Jr., The Metallurgical Society of AIME, 799–805 (1985).
B. N. Mukashev, K. A. Abdullin, Y. V. Gorelkinski, and S. Z. Tokmoldin, “Self-Interstitial Related Reactions in Silicon Irradiated by Light Ions,” Materials Science and Engineering B, vol. 58, 171–178 (1999).
H. J. Stein and F. L. Vook, “Characteristics of Electron-Induced Defects in n-Type Silicon,” in: Radiation Effects in Semiconductors, edited by F. L. Vook, New York: Plenum Press, 115–123 (1968).
B. Massarani and A. Brelot, “Evidence of 130 K Annealing Stage of Divacancy in Electron-Irradiated Silicon,” in: Radiation Damage and Defects in Semiconductors, edited by J. E. Whitehouse, Inst. Phys. Conf. Ser., no. 16, 269–277 (1973).
B. Bech Nielsen and J. U. Andersen, “Beam-Induced Annealing of Defects in Silicon after Light-Ion Implantation at 30 K,” Phys. Rev. B, vol. 35, no. 6, 2732–2739 (1987).
K. A. Abdullin, B. N. Mukashev, M. F. Tamendarov, and T. B. Tashenov, “Electronic Levels and Properties of the Selfinterstitials in Irradiated Silicon,” Physics Letters A, vol. 166, 40–42 (1992).
K. A. Abdullin, B. N. Mukashev, M. F. Tamendarov, and T. B. Tashenov, “Electronic Levels and Properties of the Selfinterstitials in Irradiated Silicon,” in: Defect Engineering in Semiconduc-tor Growth, Processing and Device Technology, edited by S. Ashok, J. Chevallier, K. Sumino, and E. Weber, Mat. Res. Soc. Symp. Proc, vol. 262, 1109–1113 (1992).
K. A. Abdullin and B. N. Mukashev, “Defects in p-Si Bombarded at 77 K: Energy Spectrum and Annealing Kinetics,” Semiconductors, vol. 28, no. 10, 1012–1017 (1994).
K. A. Abdullin, B. N. Mukashev, and Y. V. Gorelkinskii, “Metastable Oxygen-Silicon Interstitial Complex in Crystalline Silicon,” Semicond. Sci. Technol., vol. 11, 1696–1703 (1996).
T. A. G. Eberlein, N. Pinho, R. Jones, B. J. Coomer, J. P. Goss, P. R. Briddon, and S. Öberg, “Self-Interstitial Clusters in Silicon,” Physica B, vol. 308-310, 454–457 (2001).
D. J. Roth and J. D. Plummer, “Oxidation-Enhanced Diffusion of Boron and Phosphorus in Heavily Doped Layers in Silicon,” J. Electrochem. Soc:, vol. 141, no. 4, 1074–1081 (1994).
K. P. Chik, “Doping Effects on Diffusion and Diffusion Mechanisms in Ge and Si,” Radiation Effects, vol. 4, 33–37 (1970).
A. Seeger and W. Frank, “Self-Interstitials in Silicon and Germanium,” in: Radiation Damage and Defects in Semiconductors, Inst. Phys. Conf. Ser., no. 16, 262–268 (1973).
W. Frank, “The Nature of Interstitials in Silicon and Germanium,” in: Lattice Defects in Semiconductors, 1974, Inst. Phys. Conf Ser., no. 23, 23–43 (1975).
H. Lefèvre, “Trap-Centers of Self-Interstitials in Silicon,” Appl. Phys., vol. 22, 15–22 (1980).
M. D. Giles, “Defect-Coupled Diffusion at High Concentrations,” IEEE Trans. Computer-Aided Design, vol. 8, no. 5, 460–467 (1989).
M. D. Giles, “Extrinsic Transient Diffusion in Silicon,” Appl. Phys. Lett., vol. 58, no. 21, 2399–2401 (1991).
J. P. John and M. E. Law, “Oxidation Enhanced Diffusion of Phosphorus in Silicon in Heavily Doped Background Concentrations,” J. Electrochem. Soc, vol. 140, no. 5, 1489–1491 (1993).
D. Tsoukalas and P. Chenevier, “Boron Diffusion in Silicon in Inert and Oxidizing Ambient and Extrinsic Conditions,” phys. stat. sol. (a), vol. 100, 461–465 (1987).
G. Bemski and C. A. Dias, “Quenched-in Defects in p-Type Silicon,” J. Appl. Phys., vol. 35, no. 10, 2983–2985 (1964).
M. L. Swanson, “Defects in Quenched Silicon,” phys. stat. sol, vol. 33, 721–730 (1969).
S. I. Tan, B. S. Berry, and W. F. J. Frank, “Internal Friction Study of Point Defects in Boron-Implanted Silicon,” in: Ion Implantation in Semiconductors and Other Materials, edited by B. Crowder, New York: Plenum Press, 19–30 (1973).
W. Frank, “Interstitial Properties Deduced from Internal Friction Measurements on Boron-Implanted Silicon,” Radiation Effects, vol. 21, 119–133 (1974).
G. D. Watkins, R. P. Messmer, C. Weigel, D. Peak, and J. W. Corbett, “Properties of the Interstitial in the Diamond-Type Lattice,” Phys. Rev. Lett, vol. 27, no. 23, 1573–1575 (1971).
C. Weigel, D. Peak, J. W. Corbett, G. D. Watkins, and R. P. Messmer, “Carbon Interstitial in the Diamond Lattice,” Phys. Rev. B, vol. 8, no. 6, 2906–2915 (1973).
S. T. Pantelides, I. Ivanov, M. Scheffler, and J. P. Vigneron, “Multivacancies, Interstitials, and Self-Interstitial Migration in Silicon,” in: Proceedings of the 12 th International Conference on Defects in Semiconductors, edited by C. A. J. Ammerlaan, Physica, vol. 116B, 18–27 (1983).
Y. Bar-Yam and J. D. Joannopoulos, “Barrier to Migration of the Silicon Self-Interstitial,” Phys. Rev. Lett., vol. 52, no. 13, 1129–1132 (1984).
Y. Bar-Yam and J. D. Joannopoulos, “Electronic Structure and Total-Energy Migration Barriers of Silicon Self-Interstitials,” Phys. Rev. B, vol. 30, no. 4, 1844–1852 (1984).
Y. Bar-Yam and J. D. Joannopoulos, “Silicon Self-Interstitial Migration: Multiple Paths and Charge States,” Phys. Rev. B, vol. 30, no. 4, 2216–2218 (1984).
G. A. Baraff and M. Schlüter, “Migration of Interstitials in Silicon,” Phys. Rev. B, vol. 30, no. 6, 3460–3469 (1984).
W.-C. Lee, S.-G. Lee, and K. J. Chang, “First-Principles Study of the Self-Interstitial Diffusion Mechanism in Silicon,” J. Phys.: Condens. Matter, vol. 10, 995–1002 (1998).
D. J. Chadi, “Self-Interstitial Bonding Configurations in GaAs and Si,” Phys. Rev. B, vol. 46, no. 15, 9400–9407 (1992).
C. G. Van de Walle and J. Neugebauer, “Hydrogen Interactions with Self-Interstitials in Silicon,” Phys. Rev. B, vol. 52, no. 20, R14320–R14323 (1995).
J. Zhu, T. Diaz de la Rubia, L. H. Yang, C. Maillhot, and G. H. Gilmer, “Ab Initio Pseudopo-tential Calculations of B Diffusion and Pairing in Si,” Phys. Rev. B, vol. 54, no. 7, 4741–4747 (1996).
S. J. Clark and G. J. Ackland, “Ab Initio Calculations of the Self-Interstitial in Silicon,” Phys. Rev. B, vol. 56, no. 1, 47–50 (1997).
H. R. Schober, “Extended Interstitials in Silicon and Germanium,” Phys. Rev. B, vol. 39, no. 17, 13013–13015 (1989).
D. Maraudas and R. A. Brown, “Calculation of Thermodynamic and Transport Properties of Intrinsic Point Defects in Silicon,” Phys. Rev. B, vol. 47, no. 23, 15562–15577 (1993).
W. Frank, U. Gösele, and A. Seeger, “Foreign Interstitial Atoms and Their Relation to Thermal Intrinsic Defects in Silicon,” in: Defects and Radiation Effects in Semiconductors, 1978, edited by J. H. Albany, Inst. Phys. Conf. Ser., no. 46, 514–520 (1979).
A. Seeger, W. Frank, and U. Gösele, “Diffusion in Elemental Semiconductors: New Developments,” in: Defects and Radiation Effects in Semiconductors, 1978, edited by J. H. Albany, Inst. Phys. Conf. Ser., no. 46, 148–149 (1979).
M. Jacob, P. Pichler, H. Ryssel, and R. Falster, “Determination of Vacancy Concentrations in the Bulk of Silicon Wafers by Platinum Diffusion Experiments,” J. Appl. Phys., vol. 82, no. 1, 182–191 (1997).
B. Leroy, “Kinetics of Growth of the Oxidation Stacking Faults,” J. Appl. Phys., vol. 50, no. 12, 7996–8005 (1979).
T. K. Okada, H. Kawaguchi, S. Onaga, and K. Yamabe, “Non-Equilibrium Diffusion Process Modeling Based on Three-Dimensional Simulator and Regulated Point Defect Injection Experiments,” in: 1991 International Workshop on VLSI Process and Device Modeling (1991 VPAD), Japan Society of Applied Physics, 8–9 (1991).
W. B. Rogers and H. Z. Massoud, “Determination of the Kinetic Coefficients of Silicon Self-Interstitials from Oxygen Precipitation/Front-Surface Stacking-Fault Growth Experiments,” J. Electrochem. Soc, vol. 138, no. 11, 3492–3498 (1991).
S. M. Hu, “Vacancies and Self-Interstitials in Silicon,” in: Defects in Silicon II, edited by W. M. Bullis, U. Gösele, and F. Shimura, Electrochem. Soc. Proc, vol. 91-9, 211–236 (1991).
H. Bracht, N. A. Stolwijk, H. Mehrer, and I. Yonenaga, “Short-Time Diffusion of Zinc in Silicon for the Study of Intrinsic Point Defects,” Appl. Phys. Lett., vol. 59, no. 27, 3559–3561 (1991).
W. Wijaranakula, “Numerical Modeling of the Point Defect Aggregation during the Czochralski Silicon Crystal Growth,” J. Electrochem. Soc, vol. 139, no. 2, 604–616 (1992).
S. M. Hu, “Vacancies and Self-Interstitials in Silicon: Generation and Interaction in Diffusion,” J. Electrochem. Soc, vol. 139, no. 1, 2066–2075 (1992).
Y. Satoh, H. Furuya, M. Kadoi, and Y. Shimanuki, “Anomalous Depth Distributions of Bulk Microdefects in Heat-Treated Czochralski Silicon Wafers Due to Nonequilibrium Self-Interstitials,” J. Appl. Phys., vol. 77, no. 8, 3710–3724 (1995).
H. S. Chao, S. W. Crowder, P. B. Griffin, and J. D. Plummer, “Species and Dose Dependence of Ion Implantation Damage Induced Transient Enhanced Diffusion,” J. Appl. Phys., vol. 79, no. 5, 2352–2363 (1996).
S. Bharatan, Y M. Haddara, M. E. Law, and K. S. Jones, “Determining the Enthalpy of Formation of a Si Interstitial Using Quantitative TEM and SIMS,” in: Silicon Front-End Technology — Materials Processing and Modelling, edited by N. E. B. Cowern, D. C. Jacobson, P. B. Griffin, P. A. Packan, and R. P. Webb, Mat. Res. Soc. Symp. Proc, vol. 532, 111–118 (1998).
M. Hakala, M. J. Puska, and R. M. Nieminen, “First-Principles Calculations of Interstitial Boron in Silicon,” Phys. Rev. B, vol. 61, no. 12, 8155–8161 (2000).
R. E. McKeighen and J. S. Koehler, “Electron-Irradiation Effects in Silicon at Liquid-Helium Temperatures Using AC Hopping Conductivity,” Phys. Rev. B, vol. 4, no. 2, 462–478 (1971).
J. C. Bourgoin and J. W. Corbett, “A New Mechanism for Interstitial Migration,” Phys. Lett., vol. 38A, no. 2, 135–137 (1972).
A. Hallén, D. Fenyö, B. U. R. Sundqvist, R. E. Johnson, and B. G. Svensson, “The Influence of Ion Flux on Defect Production in MeV Proton-Irradiated Silicon,” J. Appl. Phys., vol. 70, no. 6, 3025–3030 (1991).
P. Lévêque, A. Hallén, P. Pellegrino, B. G. Svensson, and V. Privitera, “Dose-Rate Influence on the Defect Production in MeV Proton-Implanted Float-Zone and Epitaxial n-Type Silicon,” Nuclear Instruments and Methods in Physics Research B, vol. 186, 375–379 (2002).
V. Privitera, S. Coffa, K. Kyllesbech Larsen, S. Libertino, G. Mannino, and F. Priolo, “Point Defects Migration in Si at Room Temperature: The Role of Surface and Impurity Content,” in: Defects and Diffusion in Silicon Processing, edited by T. Diaz de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, Mat. Res. Soc. Symp. Proc, vol. 469, 163–173 (1997).
V. Privitera, S. Coffa, F. Priolo, K. Kyllesbech Larsen, and G. Mannino, “Room-Temperature Migration and Interaction of Ion Beam Generated Defects in Crystalline Silicon,” Appl. Phys. Lett., vol. 68, no. 24, 3422–3424 (1996).
A. N. Buzynin, A. E. Luk’yanov, V. V. Osiko, and V. V. Voronkov, “Non-Equilibrium Impurity Redistribution in Si,” Nuclear Instruments and Methods in Physics Research B, vol. 186, 366–370 (2002).
N. E. B. Cowern, E. J. H. Collart, J. Politiek, P. H. L. Bancken, J. G. M. van Berkum, K. Kyllesbech Larsen, P. A. Stolk, H. G. A. Huitzing, P. Pichler, A. Burenkov, and D. J. Gravensteijn, “Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications,” in: Defects and Diffusion in Silicon Processing, edited by T. Diaz de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, Mat. Res. Soc. Symp. Proc, vol. 469, 265–276 (1997).
M. Hill, M. Lietz, and R. Sittig, “Diffusion of Gold in Silicon,” J. Electrochem. Soc, vol. 129, no. 7, 1579–1587 (1982).
P. B. Griffin, P. M. Fahey, J. D. Plummer, and R. W. Dutton, “Measurement of Silicon Interstitial Diffusivity,” Appl. Phys. Lett., vol. 47, no. 3, 319–321 (1985).
E. Scheid and P. Chenevier, “Determination des paramètres de distribution des auto-interstitiels silicium en vue de la modélisation 2-D des processus technologiques. Discussion sur la validité physique,” Revue Phys. Appl., vol. 20, no. 7, 483–491 (1985).
T. Abe, H. Harada, N. Ozawa, and K. Adomi, “Deep Level Generation-Annihilation in Nitrogen Doped FZ Crystals,” in: Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon, edited by J. C. Mikkelsen, Jr., S. J. Pearton, J. W. Corbett, and S. J. Pennycook, Mat. Res. Soc. Symp. Proc, vol. 59, 537–544 (1986).
P. B. Griffin and J. D. Plummer, “Point Defect Models for Two-Dimensional Diffusion Kinetics,” Electrochem. Soc. Extended Abstracts, vol. 86-2, 818–819 (1986).
P. B. Griffin and J. D. Plummer, “The Influence of Point Defects on Two Dimensional Diffusion Kinetics,” in: Materials Issues in Silicon Integrated Circuit Processing, edited by M. Wittmer, J. Stimmell, and M. Strathman, Mat. Res. Soc. Symp. Proc, vol. 71, 75–80 (1986).
P. B. Griffin and J. D. Plummer, “Point Defect Models for Two Dimensional Diffusion Kinetics,” in: Proc. Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, J. Plummer, and D. Antoniadis, Electrochem. Soc. Proc, vol. 88-16, 53–65 (1988).
W. B. Rogers, H. Z. Massoud, R. B. Fair, U. M. Gösele, R. Shaw, H. Korb, and M. Guse, “Point Defect Kinetics during Backside Oxidation Measured by Frontside Stacking-Fault Growth,” Electrochem. Soc Extended Abstracts, vol. 87-1, no. 264, 384–385 (1987).
S. T. Ahn, P. B. Griffin, J. D. Shott, J. D. Plummer, and W. A. Tiller, “A Study of Silicon Interstitial Kinetics Using Silicon Membranes: Applications to 2D Dopant Diffusion,” J. Appl. Phys., vol. 62, no. 12, 4745–755 (1987).
M. R. Kump and R. W. Dutton, “The Efficient Simulation of Coupled Point Defect and Impurity Diffusion,” IEEE Trans. Computer-Aided Design, vol. 7, no. 2, 191–204 (1988).
S. T. Ahn, J. D. Shott, and W. A. Tiller, “Determination of Modeling Parameters for Silicon Interstitial Diffusion Using Silicon Membranes,” in: Proc Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, J. Plummer, and D. Antoniadis, Electrochem. Soc Proc, vol. 88-16, 66–75 (1988).
K. Kawakami, M. Hasebe, and S. Shinoyama, “Growth Model of Ring-Likely Distributed Stacking Faults,” in: Extended Abstracts of the 37 th Spring Meeting Japan. Soc. Appl. Phys. and Related Societies, 221 (1990).
W. Wijaranakula, “An Experimental Estimation of Silicon Interstitial Diffusivity,” J. Appl. Phys., vol. 67, no. 12, 7624–7626 (1990).
H. Yamanaka, Y. Aoki, and T. Samizo, “Role of Silicon Self-Interstitials Injected by Thermal Oxidation in Oxygen Precipitation in Czochralski Silicon,” Jpn. J. Appl. Phys., vol. 29, no. 11, 2450–2455 (1990).
S. T. Dunham, A. M. Agarwal, and N. Jeng, “Measurements of Enhanced Diffusion of Buried Layers in Silicon Membrane Structures during Oxidation,” in: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures, edited by D. J. Wolford, J. Bernholc, and E. E. Haller, Mat. Res. Soc. Symp. Proc, vol. 163, 543–548 (1990).
S. T. Dunham, A. M. Agarwal, and N. Jeng, “Determination of Silicon Point Defect Properties Using Buried Layer and Membranes,” in: Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, J. D. Plummer, and S. T. Pantelides, Electrochem. Soc. Proc, vol. 91-4, 516–528 (1991).
W. B. Rogers and H. Z. Massoud, “Determination of the Kinetic Coefficients of Silicon Self-Interstitials from Back-Side Oxidation/Front-Surface Stacking-Fault Growth Experiments,” J. Electrochem. Soc, vol. 138, no. 11, 3483–3491 (1991).
H.-J. Gossmann, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, T. Boone, and J. M. Poate, “Oxidation Enhanced Diffusion in Si B-Doping Superlattices and Si Self-Interstitial Diffusivities,” Appl. Phys. Lett., vol. 63, no. 5, 639–641 (1993).
A. M. Agarwal and S. T. Dunham, “Determination of Silicon Point Defect Properties from Oxidation Enhanced Diffusion of Buried Layers,” Appl. Phys. Lett., vol. 63, no. 6, 800–802 (1993).
H. Yamanaka and Y. Aoki, “Crude Estimates of Diffusivity and Supersaturation of Silicon Self-Interstitials Injected by Thermal Oxidation of Czochralski Silicon,” Jpn. J. Appl. Phys., Part 2, vol. 33, no. 4B, L559–L562 (1994).
P. A. Stolk, H.-J. Gossmann, D. J. Eagleshm, D. C. Jacobson, J. M. Poate, and H. S. Luftman, “Trap-Limited Interstitial Diffusivity and Enhanced Boron Clustering in Silicon,” Appl. Phys. Lett., vol. 66, no. 5, 568–570 (1995).
H.-J. Gossmann, G. H. Gilmer, C. S. Rafferty, F. C. Unterwald, T. Boone, J. M. Poate, H. S. Luftman, and W. Frank, “Determination of Si Self-Interstitial Diffusivities from the Oxidation-Enhanced Diffusion in B Doping-Superlattices: The Influence of the Marker Layers,” J. Appl. Phys., vol. 77, no. 5, 1948–1951 (1995).
P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, and J. M. Poate, “Implantation and Transient Boron Diffusion: The Role of the Silicon Self-Interstitial,” in: Ion Implantation Technology— 94, edited by S. Coffa, G. Ferla, F. Priolo, and E. Rimini, Nuclear Instruments and Methods in Physics Research B, vol. 96, Amsterdam: Elsevier, 187–195 (1995).
H. G. A. Huizing, C. C. G. Visser, N. E. B. Cowern, P. A. Stolk, and R. C. M. de Kruif, “Ultrafast Interstitial Injection during Transient Enhanced Diffusion of Boron in Silicon,” Appl. Phys. Lett, vol. 69, no. 9, 1211–1213 (1996).
W. B. Knowlton, J. T. Walton, Y K. Wong, I. A. Mason, and E. E. Haller, “High Silicon Self-Interstitial Diffusivity As Revealed by Lithium Ion Drift,” in: Defects and Diffusion in Silicon Processing, edited by T. Diaz de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, Mat. Res. Soc. Symp. Proc, vol. 469, 77–82 (1997).
E. N. Shauly, R. Ghez, and Y Komem, “Two-Dimensional Diffusion Characterization of Boron in Silicon Using Reverse Modeling,” in: Simulation of Semiconductor Processes and Devices 2001, edited by D. Tsoukalas and C. Tsamis, Vienna: Springer-Verlag, 384–387 (2001).
Y.-H. Lee, N. N. Gerasimenko, and J. W. Corbett, “EPR Study of Neutron-Irradiated Silicon: A Positive Charge State of the (100) Split Di-Interstitial,” Phys. Rev. B, vol. 14, no. 10, 4506–t520 (1976).
Y. H. Lee, “Silicon Di-Interstitial in Ion-Implanted Silicon,” Appl. Phys. Lett., vol. 73, no. 8, 1119–1121 (1998).
D. F. Daly, “New EPR Spectra in Irradiated Silicon,” J. Appl. Phys., vol. 42, no. 2, 864–865 (1971).
K. L. Brower, “EPR of a (001) Si Interstitial Complex in Irradiated Silicon,” Phys. Rev. B, vol. 14, no. 3, 872–883 (1976).
B. J. Coomer, J. P. Goss, R. Jones, S. Öberg, and P. R. Briddon, “Identification of the Tetra-Interstitial in Silicon,” J. Phys.: Condens. Matter, vol. 13, no. 1, L1–L7 (2001).
D. Pierreux and A. Stesmans, “Atomic Structure of the B3 Defect in Neutron-Irradiated Silicon,” Phys. Rev. B, vol. 68, 193208 (2003).
P. Stallinga, T. Gregorkiewicz, C. A. J. Ammerlaan, and Y. V. Gorelkinskii, “Electron Paramagnetic Resonance Study of the NL51 Spectrum in Hydrogen-Implanted Silicon,” Solid State Communications, vol. 90, no. 6, 401–404 (1994).
A. R. Chelyadinskii and V. A. Burenkov, “Model of the Pair Phosphorus Atom-Interstitial Silicon Atom,” Physics of the Solid State, vol. 40, no. 11, 1806–1808 (1998).
K. Murakami, K. Masuda, K. Gamo, and S. Namba, “ESR Studies on Annealing Behavior of Heavily Damaged Silicon,” in: Ion Implantation in Semiconductors, edited by S. Namba, New York: Plenum Press, 533–538 (1975).
T. Maekawa, S. Inone, and A. Usami, “Hole Trap Annealing in Neutron-Transmutation-Doped Silicon with Different Initial Resistivities,” Semicond. Sci. Technol., vol. 5, 663–668 (1990).
H. Lefèvre, “Annealing Behavior of Trap-Centers in Silicon Containing A-Swirl Defects,” Applied Physics A, vol. 29, 105–111 (1982).
B. N. Mukashev, A. V. Spitsyn, N. Fukuoka, and H. Saito, “Defects in Carbon-Implanted Silicon,” Jpn. J. Appl. Phys., vol. 21, no. 2, 399–400 (1982).
P. B. Rasband, P. Clancy, and M. O. Thompson, “Equilibrium Concentrations of Defects in Pure and B-Doped Silicon,” J. Appl. Phys., vol. 79, no. 12, 8998–9011 (1996).
L. Colombo, “Native Defects and Their Interactions in Silicon,” in: 20 th International Conference on Defects in Semiconductors, edited by C. Van de Walle and W. Walukiewicz, Physica B, vol. 273-274, 458–462 (1999).
B. J. Coomer, J. P. Goss, R. Jones, S. Öberg, and P. R. Briddon, “Interstitial Aggregates and a New Model for the I1/W Optical Centre in Silicon,” in: Proceedings of the 20 th International Conference on Defects in Semiconductors, edited by C. G. Van de Walle and W. Walukiewicz, Physica B, vol. 274, 505–508 (1999).
J. Kim, F. Kirchhoff, W G. Aulbur, J. W. Wilkins, F. S. Khan, and G. Kresse, “Thermally Activated Reorientation of Di-Interstitial Defects in Silicon,” Phys. Rev. Lett., vol. 83, no. 10, 1990–1993 (1999).
M. Hane, T. Ikezawa, and G. H. Gilmer, “Di-Interstitial Diffusivity and Migration Path Calculations Based on Tight-Binding Hamiltonian Molecular Dynamics,” in: 2000 International Conference on Simulation of Semiconductor Processes and Devices, Piscataway: IEEE, 119–122 (2000).
M. P. Chichkine and M. M. De Souza, “Dynamics of Self-Interstitial Cluster Formation in Silicon,” Phys. Rev. B, vol. 66, 045205 (2002).
D. A. Richie, J. Kim, S. A. Barr, K. R. A. Hazzard, R. Hennig, and J. W. Wilkins, “Complexity of Small Silicon Self-Interstitial Defects,” Phys. Rev. Lett., vol. 92, 045501 (2004).
S. K. Estreicher, M. Gharaibeh, P. A. Fedders, and P. Ordejón, “Unexpected Dynamics for Self-Interstitial Clusters in Silicon,” Phys. Rev. Lett., vol. 86, no. 7, 1247–1250 (2001).
D. A. Richie, J. Kim, R. Hennig, K. Hazzard, S. Barr, and J. W. Wilkins, “Large-Scale Molecular Dynamics Simulations of Interstitial Defect Diffusion in Silicon,” in: Modeling and Numerical Simulation of Materials Behavior and Evolution, edited by V. Tikare, E. A. Olevsky, and A. Zavaliangos, Mat. Res. Soc. Symp. Proc, vol. 731, W9.10.1–W9.10.5 (2002).
I. Martin-Bragado, M. Jaraiz, P. Castrillo, R. Pinacho, J. Barbolla, and M. M. De Souza, “Mobile Silicon Di-Interstitial: Surface, Self-Interstitial Clustering, and Transient Enhanced Diffusion Phenomena,” Phys. Rev. B, vol. 68, 195204 (2003).
M. Gharaibeh, S. K. Estreicher, and P. A. Fedders, “Molecular-Dynamics Studies of Self-Interstitial Aggregates in Si,” in: 20 th International Conference on Defects in Semiconductors, edited by C. Van de Walle and W. Walukiewicz, Physica B, vol. 273-274, 532–534 (1999).
G. M. Lopez and V. Fiorentini, “Vibrational Modes of Three-Membered Self-Interstitial Clusters in Silicon,” J. Phys.: Condens. Matter, vol. 15, 7851–7857 (2003).
N. Arai, S. Takeda, and M. Kohyama, “Self-Interstitial Clustering in Crystalline Silicon,” Phys. Rev. Lett., vol. 78, no. 22, 4265–4268 (1997).
P. Humble, “The Structure and Mechanism of Formation of Platelets in Natural Type Ia Diamond,” Proc. Roy. Soc. Lond. A, vol. 381, 65–81 (1982).
M. Kohyama and S. Takeda, “First-Principles Calculations of the Self-Interstitial Cluster I4 in Si,” Phys. Rev. B, vol. 60, no. 11, 8075–8080 (1999).
S. Birner, J. Kim, D. A. Richie, J. W. Wilkins, A. F. Voter, and T. Lenosky, “Accelerated Dynamics Simulations of Interstitial-Cluster Growth,” Solid State Communications, vol. 120, 279–282 (2001).
M. M. De Souza, M. P. Chichkine, and E. M. Sankara Narayanan, “A Study of Fully Coordinated Precursors in Silicon Using the Ackland Potential,” Physica B, vol. 304, 483–488 (2001).
M. P. Chichkine, M. M. De Souza, and E. M. Sankara Narayanan, “Growth of Precursors in Silicon Using Pseudopotential Calculations,” Phys. Rev. Lett., vol. 88, no. 8, 085501 (2002).
Z. Ciechanowska, G. Davies, and E. C. Lightowlers, “Uniaxial Stress Measurements on the 1039.8 meV Zero-Phonon Line in Irradiated Silicon,” Solid State Communications, vol. 49, no. 5, 427–31 (1984).
G. Davies, E. C. Lightowlers, and Z. E. Ciechanowska, “The 1018 meV (W or I1 Vibronic Band in Silicon,” J. Phys. C, vol. 20, 191–205 (1987).
K. Terashima, T. Ikarashi, M. Watanabe, and T. Kitano, “Luminescence Centers in High-Energy Ion-Implanted Silicon,” in: Defects in Semiconductors 19, edited by G. Davies and M. H. Nazaré, Materials Science Forum, vol. 258-263, 587–592 (1997).
O. O. Awadelkarim, “Photoluminescence Study of Radiative Channels in Ion-Implanted Silicon,” Phys. Rev. B, vol. 42, no. 9, 5635–5640 (1990).
T. Mchedlidze and M. Suezawa, “Properties of Tetra-Interstitial Agglomerate in Silicon: an ESR Study,” in: Proceedings of the 22 nd International Conference on Defects in Semiconductors, edited by K. Bonde Nielsen, A. Nylandsted Larsen, and G. Weyer, Physica B, vol. 340-342, 682–686 (2003).
M. Gharaibeh, S. K. Estreicher, and P. A. Fedders, “Dynamics of Si Self-Interstitial Clustering Using the Fast-Diffusing I3 Cluster,” Physica B, vol. 308-310, 510–512 (2001).
J. R. Noonan, C. G. Kirkpatrick, and B. G. Streetman, “Low-Temperature Photoluminescence from Boron Ion Implanted Si,” Radiation Effects, vol. 21, 225–228 (1974).
P. J. Schultz, T. D. Thompson, and R. G. Elliman, “Activation Energy for the Photoluminescence W Center in Silicon,” Appl. Phys. Lett., vol. 60, no. 1, 59–61 (1992).
M. Nakamura, “Order of the Formation Reaction and the Origin of the Photoluminescence W Center in Silicon Crystal,” Jpn. J. Appl. Phys., Part 2, vol. 40, no. 10A, L1000–L1002 (2001).
N. Bürger, K. Thonke, R. Sauer, and G. Pensl, “New Class of Related Optical Defects in Silicon Implanted with the Noble Gases He, Ne, Ar, Kr, and Xe,” Phys. Rev. Lett., vol. 52, no. 18, 1645–1648 (1984).
M. Nakamura, S. Nagai, Y. Aoki, and H. Naramoto, “Oxygen Participation in the Formation of the Photoluminescence W Center and the Center’s Origin in Ion-Implanted Silicon Crystals,” Appl. Phys. Lett., vol. 72, no. 11, 1347–1349 (1998).
H. Feick and E. R. Weber, “Annealing of the Photoluminescence W-Center in Proton-Irradiated Silicon,” in: 20 th International Conference on Defects in Semiconductors, edited by C. Van de Walle and W. Walukiewicz, Physica B, vol. 273-274, 497–500 (1999).
N. S. Minaev, A. V Mudrii, and V D. Tkachev, “Symmetry and Nature of the 1.0186 eV Luminescence Centre in Neutron-Irradiated Silicon,” phys. stat. sol. (b), vol. 108, K89–K94 (1981).
B. C. MacEvoy and S. J. Watts, “Defect Engineering Radiation Tolerant Silicon Detectors,” in: Gettering and Defect Engineering in Semiconductor Technology GADEST’97, edited by C. Claeys, J. Vanhellemont, H. Richter, and M. Kittler, Solid State Phenomena, vol. 57-58, 221–231 (1997).
R. J. Davis, H.-U. Habermeier, and J. Weber, “Photoluminescence of Low-Energy Ion Bombarded Silicon,” Appl. Phys. Lett, vol. 47, no. 12, 1295–1297 (1985).
M. Nakamura and S. Nagai, “Influence of High-Energy Electron Irradiation on the Formation and Annihilation of the Photoluminescence W Center and the Center’s Origin in a Proton-Implanted Silicon Crystal,” Phys. Rev. B, vol. 66, 155204 (2002).
S. J. Watts, “Irradiation Induced Defects in Silicon Detectors,” in: Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing II, edited by B. O. Kolbesen, C. Claeys, P. Stallhofer, and F. Tardif, Electrochem. Soc. Proc, vol. 97-22, 116–131 (1997).
J. L. Benton, S. Libertino, P. KringhoJ, D. J. Eaglesham, J. M. Poate, and S. Coffa, “Evolution from Point to Extended Defects in Ion Implanted Silicon,” J. Appl. Phys., vol. 82, no. 1, 120–125 (1997).
J. L. Benton, K. Halliburton, S. Libertino, D. J. Eaglesham, and S. Coffa, “Electrical Signatures and Thermal Stability of Interstitial Clusters in Ion Implanted Si,” J. Appl Phys., vol. 84, no. 9, 4749–756 (1998).
S. Libertino, S. Cofa, and J. L. Benton, “Formation, Evolution, and Annihilation of Interstitial Clusters in Ion-Implanted Si,” Phys. Rev. B, vol. 63, 195206 (2001).
P. K. Giri and Y. N. Mohapatra, “Electrical Characterization of MeV Heavy-Ion-Induced Damage in Silicon: Evidence for Defect Migration and Clustering,” J. Appl. Phys., vol. 84, no. 4, 1901–1912 (1998).
D. C. Schmidt, B. G. Svensson, M. Seibt, C. Jagadish, and G. Davies, “Photoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Microscopy Measurements on MeV Self-Ion Implanted and Annealed n-Type Silicon,” J. Appl Phys., vol. 88, no. 5, 2309–2317 (2000).
M. Nakamura and S. Murakami, “Evolution of Photoluminescence Defect Clusters in Proton-and Copper-Implanted Silicon Crystals during Annealing,” J. Appl. Phys., vol. 94, no. 5, 3075–3081 (2003).
D. Stiebel and P. Pichler, “Transient-Diffusion Effects,” Appl. Phys. A, vol. 76, 1041–1048 (2003).
F. Schiettekatte, S. Roorda, R. Poirier, M. O. Fortin, S. Chazal, and R. Héliou, “Direct Evidence for 8-Interstitial-Controlled Nucleation of Extended Defects in c-Si,” Appl. Phys. Lett., vol. 77, no. 26, 4322–4324 (2000).
J. Kim, J. W. Wilkins, F. S. Khan, and A. Canning, “Extended Si 311 Defects,” Phys. Rev. B, vol. 55, no. 24, 16186–16197 (1997).
J. Frenkel, “Über die Wärmebewegung in festen und flüssigen Körpern,” Z. Physik, vol. 35, 652–669 (1926).
D. E. Hill, “Electron Bombardment of Silicon,” Phys. Rev., vol. 114, no. 6, 1414–1420 (1959).
G. K. Wertheim, “Temperature-Dependent Defect Production in Bombardment of Semiconductors,” Phys. Rev., vol. 115, no. 3, 568–569 (1959).
G. D. Watkins, J. W. Corbett, and R. M. Walker, “Spin Resonance in Electron Irradiated Silicon,” J. Appl. Phys., vol. 30, no. 8, 1198–1203 (1959).
H. J. Stein and F. L. Vook, “Electrical Studies of Electron-Irradiated n-Type Si: Impurity and Irradiation-Temperature Dependence,” Phys. Rev., vol. 163, no. 3, 790–800 (1967).
E. G. Wikner and D. P. Snowden, “Temperature Dependence of the Production of the Si-B1 Center by High-Energy Electrons,” Bull. Am. Phys. Soc, Series II, vol. 9, no. 7, 706 (1964).
L. J. Cheng and J. C. Correlli, “Recovery of Electrical Properties in 45-MeV-Electron-Irradiated n-Type Si from 80 to 350°K,” Phys. Rev., vol. 140, no. 6A, A2130–A2135 (1965).
J. W. MacKay and E. E. Klontz, “Low-Temperature Annealing Studies in Ge,” J. Appl. Phys., vol. 30, no. 8, 1269–1274 (1959).
R. E. Whan and F. L. Vook, “Infrared Studies of Defect Production in n-Type Si: Irradiation-Temperature Dependence,” Phys. Rev., vol. 153, no. 3, 814–822 (1967).
F. L. Vook and H. J. Stein, “Production of Defects in n-Type Silicon,” in: Radiation Effects in Semiconductors, edited by F. L. Vook, New York: Plenum Press, 99–114 (1968).
J. W. MacKay and E. E. Klontz, “Effects of Defect Charge State on Radiation Damage in Semiconductors,” in: Radiation Effects in Semiconductors, edited by F. L. Vook, New York: Plenum Press, 175–185 (1968).
B. L. Gregory and C. E. Barnes, “Defect Reordering at Low Temperatures in Gamma Irradiated n-Type Silicon,” in: Radiation Effects in Semiconductors, edited by F. L. Vook, New York: Plenum Press, 124–135 (1968).
V. V. Emtsev, T. V. Mashovets, and E. K. Nazaryan, “Metastable Frenkel Pairs in Silicon,” Sov. Phys. Semicond., vol. 16, no. 4, 440–443 (1982).
S. Bausch, H. Zillgen, and P. Ehrhart, “Frenkel Defects in Low Temperature e(-)-Irradiated Ge and Si Investigated by X-Ray Diffraction,” in: Defects in Semiconductors 18, edited by M. Suezawa and H. Katayama-Yoshida, Materials Science Forum, vol. 196-201, 1141–1145 (1995).
P. Ehrhart and H. Zillgen, “Bound Vacancy Interstitial Pairs in Irradiated Silicon,” Nuclear Instruments and Methods in Physics Research B, vol. 127/128, 27–31 (1997).
B. N. Mukashev, K. A. Abdullin, and Y V. Gorelkinskii, “Interactions of Primary Defects with Impurities in Silicon,” Nuclear Instruments and Methods in Physics Research B, vol. 186, 83–87 (2002).
A. Dal Pino, Jr., M. Needels, and J. D. Joannopoulos, “Oxygen-Induced Broken-Bond Defect in Silicon,” Phys. Rev. B, vol. 45, no. 7, 3304–3308 (1992).
M. Tang, L. Colombo, J. Zhou, and T. Diaz de la Rubia, “Intrinsic Point Defects in Crystalline Silicon: Tight-Binding Molecular Dynamics Studies of Self-Diffusion, Interstitial-Vacancy Recombination, and Formation Volumes,” Phys. Rev. B, vol. 55, no. 21, 14279–14289 (1997).
F Cargnoni, C. Gatti, and L. Colombo, “Formation and Annihilation of a Bond Defect in Silicon: An Ab Initio Quantum-Mechanical Characterization,” Phys. Rev. B, vol. 57, no. 1, 170–177 (1998).
M. T. Zawadzki, W. Luo, and P. Clancy, “Tight-Binding Molecular Dynamics Study of Vacancy-Interstitial Annihilation in Silicon,” Phys. Rev. B, vol. 63, 205205 (2001).
L. A. Marqués, L. Pelaz, J. Hernandez, J. Barbolla, and G. H. Gilmer, “Stability of Defects in Crystalline Silicon and Their Role in Amorphization,” Phys. Rev. B, vol. 64, 045214 (2001).
S. Goedecker, T. Deutsch, and L. Billard, “A Fourfold Coordinated Point Defect in Silicon,” Phys. Rev. Lett., vol. 88, no. 23, 235501 (2002).
R. Habu, K. Kojima, H. Harada, and A. Tomiura, “Diffusion of Point Defects in Silicon Crystals during Melt Growth. III Two Diffusor Model,” Jpn. J. Appl. Phys., vol. 32, no. 4, 1754–1758 (1993).
S. M. Hu, “Defects in Silicon Substrates,” J. Vac. Sci. Technol., vol. 14, no. 1, 17–31 (1977).
D. A. Antoniadis and I. Moskowitz, “Diffusion of Substitutional Impurities in Silicon at Short Oxidation Times: An Insight into Point Defect Kinetics,” J. Appl. Phys., vol. 53, no. 10, 6788–6796 (1982).
U. Gösele, W. Frank, and A. Seeger, “An Entropy Barrier Against Vacancy-Interstitial Recombination in Silicon,” Solid State Communications, vol. 45, no. 1, 31–33 (1983).
T. Sinno, Private communication (2002).
P. B. Moynagh and P. J. Rosser, “Quantification of Diffusion Mechanisms of Boron, Phosphorus, Arsenic, and Antimony in Silicon,” in: ESSDERC’89, edited by A. Heuberger, H. Ryssel, and P. Lange, Berlin: Springer-Verlag, 291–296 (1989).
E. Guerrero, W. Jüngling, H. Pötzl, U. Gösele, L. Mader, M. Grasserbauer, and G. Stingeder, “Determination of the Retarded Diffusion of Antimony by SIMS Measurements and Numerical Simulations,” J. Electrochem. Soc, vol. 133, no. 10, 2181–2185 (1986).
P. A. Packan, Physical Modeling of Transient Diffusion Effects in Silicon Due to Surface Oxidation and Ion-Implantation, Ph.D. thesis, Integrated Circuits Laboratory, Department of Electrical Engineering, Stanford University (1991).
E. A. Perozziello, P. B. Griffin, and J. D. Plummer, “Retarded Diffusion of Sb in a High Concentration As Background during Silicon Oxidation,” Appl. Phys. Lett., vol. 61, no. 3, 303–305 (1992).
H.-J. Gossmann, T. K. Mogi, C. S. Rafferty, P. A. Stolk, D. J. Eaglesham, H. S. Luftman, F. C. Unterwald, T. Boone, M. O. Thompson, and J. M. Poate, “Influence of Vacuum Annealing on Native Si Point Defects,” in: ULSI Science and Technology/1995, edited by E. M. Middlesworth and H. Massoud, Electrochem. Soc. Proc, vol. 95-5, 177–186 (1995).
S. Loualiche, C. Lucas, P. Baruch, J. P. Gailliard, and J. C. Pfister, “Theoretical Model for Radiation Enhanced Diffusion and Redistribution of Impurities,” phys. stat. sol. (a), vol. 69, 663–676 (1982).
P. Pichler, R. Schork, T. Klauser, and H. Ryssel, “Evaluation of the Point Defect Bulk Recombination Rate by Ion Implantation at High Temperatures,” IEICE Trans. Electron., vol. E75-C, no. 2, 128–137 (1992).
P. Pichler and R. Schork, “On Modeling of Ion Implantation at High Temperatures,” Radiation Effects and Defects in Solids, vol. 127, 367–384 (1994).
B. Baccus, T. Wada, N. Shigyo, M. Norishima, H. Nakajima, K. Inoue, T. Iinuma, and H. Iwai, “A Study of Nonequilibrium Diffusion Modeling — Applications to Rapid Thermal Annealing and Advanced Bipolar Technologies,” IEEE Trans. Electron Devices, vol. 39, no. 3, 648–661 (1992).
S. T. Dunham, “Modeling of Phosphorus Diffusion in Silicon,” in: Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, K. Taniguchi, and C. S. Murthy, Electrochem. Soc. Proc, vol. 93-6, 54–65 (1993).
M. M. Bunea, P. Fastenko, and S. T. Dunham, “Atomistic Simulations of Damage Evolution in Silicon,” in: Si Front-End Processing — Physics and Technology of Dopant-Defect Interactions, edited by H.-J. L. Gossmann, T. E. Haynes, M. E. Law, A. Nylandsted Larsen, and S. Odanaka, Mat. Res. Soc. Symp. Proc, vol. 568, 135–140 (1999).
K. M. Beardmore, W. Windl, B. P. Haley, and N. Grønbech-Jensen, “Diffusion Mechanisms and Capture Radii in Silicon,” in: Computational Nanoscience and Nanotechnology 2002, Cambridge: Applied Computational Research Society, 251–254 (2002).
E. Sirtl, “Facts and Trends in Silicon Material Processing,” in: Semiconductor Silicon 1977, edited by H. R. Huff and E. Sirtl, Electrochem. Soc Proc, vol. 77-2, 4–17 (1977).
P. Baruch, “Radiation Defects and Impurity Diffusion in Silicon,” in: Radiation Effects in Semiconductors, 1976, edited by N. B. Urli and J. W. Corbett, Inst. Phys. Conf. Sen, no. 31, 126–143 (1977).
S. Mizuo and H. Higuchi, “Retardation of Sb Diffusion in Si during Thermal Oxidation,” Jpn. J. Appl Phys., vol. 20, no. 4, 739–744 (1981).
N. A. Stolwijk and J. Hölzl, “The Influence of Dislocations on the Diffusion Behavior of Gold in Silicon,” in: Impurity Diffusion and Gettering in Semiconductors, edited by R. B. Fair, C. W. Pearce, and J. Washburn, Mat. Res. Soc Symp. Proc, vol. 36, 137–142 (1985).
N. A. Stolwijk, J. Hölzl, W. Frank, E. R. Weber, and H. Mehrer, “Diffusion of Gold in Dislocation-Free or Highly Dislocated Silicon Measured by the Spreading-Resistance Technique,” Appl. Phys. A, vol. 39, 37–8 (1986).
H. Bracht, N. A. Stolwijk, I. Yonenaga, and H. Mehrer, “Interstitial-Substitutional Diffusion Kinetics and Dislocation-Induced Trapping of Zinc in Plastically Deformed Silicon,” phys. stat. sol. (a), vol. 137, 499–514 (1993).
W. Lerch, N. A. Stolwijk, H. Mehrer, and C. Poisson, “Diffusion of Platinum into Dislocated and Non-Dislocated Silicon,” Semicond. Sci. Technol., vol. 10, 1257–1263 (1995).
A. Seeger and W. Frank, “On the Theory of the Diffusion of Gold into Dislocated Silicon Wafers,” Appl. Phys. A, vol. 27, 171–176 (1982).
N. A. Stolwijk, J. Hölzl, W. Frank, J. Hauber, and H. Mehrer, “Decoration of Defects in Silicon with Gold, and Related Subjects,” phys. stat. sol. (a), vol. 104, 225–245 (1987).
S. Kästner and J. Hesse, “The Influence of Dislocations on the Diffusion of Gold in Silicon,” phys. stat. sol. (a), vol. 25, 261–267 (1974).
W.-S. Yang, W. J. Taylor, B. P. R. Marioton, and U. Gösele, “The Efficiency of Dislocations As Sinks for Silicon Self-Interstitials in Ribbon-Grown Polycrystalline Silicon,” in: Poly crystalline Semiconductors II, edited by J. H. Werner and H. P. Strunk, Springer Proceedings in Physics, vol. 54, 236–241 (1991).
B. Pichaud, G. Mariani, W. J. Taylor, and W.-S. Yang, “Dislocation-Gold Interactions in FZ and CZ Silicon: The Role of Self-Interstitials,” in: Dislocations’ 93, edited by J. Rabier, A. George, Y. Bréchet, and L. Kubin, Solid State Phenomena, vol. 35-36, 491–96 (1994).
D. Stiebel and P. Pichler, “Recombination of Point Defects via Extended Defects and Its Influence on Dopant Diffusion,” in: Simulation of Semiconductor Processes and Devices 1998, edited by K. De Meyer and S. Biesemans, Vienna: Springer-Verlag, 360–363 (1998).
P. B. Griffin, S. T. Ahn, W A. Tiller, and J. D. Plummer, “Model for Bulk Effects on Si Interstitial Diffusivity in Silicon,” Appl. Phys. Lett., vol. 51, no. 2, 115–117 (1987).
N. E. B. Cowern, “Analytical Description for the Diffusion and Recombination of Point Defects in Silicon,” Appl. Phys. Lett, vol. 54, no. 15, 1415–1417 (1989).
H.-J. Gossmann, C. S. Rafferty, P. A. Stolk, D. J. Eaglesham, G. H. Gilmer, J. M. Poate, H.-H. Vuong, T. K. Mogi, and M. O. Thompson, “Properties of Point-Defects in Si for Process Modeling,” in: Modeling and Simulation of Thin-Film Processing, edited by D. J. Srolovitz, C. A. Volkert, M. J. Fluss, and R. J. Kee, Mat. Res. Soc. Symp. Proc, vol. 389, 3–14 (1995).
P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, and J. M. Poate, “The Effect of Carbon on Diffusion in Silicon,” Materials Science and Engineering B, vol. 36, 275–281 (1996).
U. Gösele, A. Plößl, and T. Y. Tan, “The Influence of Carbon on the Effective Diffusivities of Intrinsic Point Defects in Silicon,” in: Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, C. S. Murthy, and S. T. Dunham, Electrochem. Soc. Proc, vol. 96-4, 309–323 (1996).
M. D. Johnson, M.-J. Caturla, and T. Diaz de la Rubia, “A Kinetic Monte-Carlo Study of the Effective Diffusivity of the Silicon Self-Interstitial in the Presence of Carbon and Boron,” J. Appl. Phys., vol. 84, no. 4, 1963–1967 (1998).
H. U. Jäger, “An Explanation of Trap-Limited Self-Interstitial Diffusion and Enhanced Boron Clustering in Boron Doped Silicon Superlattices,” in: Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, C. S. Murthy, and S. T. Dunham, Electrochem. Soc. Proc, vol. 96-4, 210–215 (1996).
R. A. Casali, H. Rücker, and M. Methfessel, “Interaction of Vacancies with Interstitial Oxygen in Silicon,” Appl. Phys. Lett., vol. 78, no. 7, 913–915 (2001).
N. E. B. Cowern, “Interstitial Traps and Diffusion in Epitaxial Silicon Films,” Appl. Phys. Lett., vol. 64, no. 20, 2646–2648 (1994).
H.-H. Vuong, H.-J. Gossmann, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, R. E. Ahrens, and T. Boone, “Influence of Fluorine Implant on the Transient Enhanced Diffusion of Boron: Determination of Process Modeling Parameters,” Electrochem. Soc Extended Abstracts, vol. 95-1, 442–443 (1995).
H.-H. Vuong, H.-J. Gossmann, C. S. Rafferty, H. S. Luftman, F. C. Unterwald, D. C. Jacobson, R. E. Ahrens, T. Boone, and P. M. Zeitzoff, “Influence of Fluorine Implant on Boron Diffusion: Determination of Process Modeling Parameters,” J. Appl. Phys., vol. 77, no. 7, 3056–3060 (1995).
F. Giannazzo, S. Mirabella, D. De Salvador, E. Napolitani, V. Raineri, A. Camera, A. V. Drigo, A. Terrasi, and F. Priolo, “Direct Observation of Two-Dimensional Diffusion of the Self-Interstitials in Crystalline Si,” Phys. Rev. B, vol. 66, 161310 (2002).
A. M. Agarwal and S. T. Dunham, “Consistent Quantitative Model for the Spatial Extent of Point Defect Interactions in Silicon,” J. Appl. Phys., vol. 78, no. 9, 5313–5319 (1995).
D. M. Maher, A. Staudinger, and J. R. Patel, “Characterization of Structural Defects in Annealed Silicon Containing Oxygen,” J. Appl. Phys., vol. 47, no. 9, 3813–3825 (1976).
T. Y. Tan and W. K. Tice, “Oxygen Precipitation and the Generation of Dislocations in Silicon,” Phil. Mag., vol. 34, no. 4, 615–631 (1976).
S. M. Hu, “The Shrinkage and Growth of Oxidation Stacking Faults in Silicon and the Influence of Bulk Oxygen,” J. Appl. Phys., vol. 51, no. 7, 3666–3671 (1980).
S. T. Ahn, H. W. Kennel, J. D. Plummer, W. A. Tiller, Z. U. Rek, and S. R. Stock, “Effect of Oxygen Precipitation on Phosphorus Diffusion in Czochralski Silicon,” Appl. Phys. Lett., vol. 53, no. 1, 34–36 (1988).
A. Bourret and W. Schröter, “HREM of SiP Precipitates at the (111) Silicon Surface during Phosphorus Predeposition,” Ultramicroscopy, vol. 14, 97–106 (1984).
S. Mizuo and H. Higuchi, “Effects of Backside Oxidation on the Size of Oxidation Induced Stacking Faults at the Front Surface of FZ Si Wafers,” Jpn. J. Appl. Phys., vol. 21, no. 11, 1547–1553 (1982).
S. Mizuo and H. Higuchi, “Anomalous Diffusion of B and P in Si Directly Masked with S13N4,” Jpn. J. Appl. Phys., vol. 21, no. 2, 281–286 (1982).
S. Mizuo and H. Higuchi, “Effects of Back-Side Oxidation of Si Substrates on Sb Diffusion at Front Side,” J. Electrochem. Soc, vol. 130, no. 9, 1942–1947 (1983).
S. M. Hu, “Formation of Stacking Faults and Enhanced Diffusion in the Oxidation of Silicon,” J. Appl. Phys., vol. 45, no. 4, 1567–1573 (1974).
M. Hamasaki, “On an Analytical Solution for Two-Dimensional Diffusion of Silicon Self-Interstitials during Oxidation of Silicon,” Solid-State Electronics, vol. 25, no. 1, 1–4 (1982).
A. L. Aseev and V. M. Astakhov, “Interaction of Point Defects with the Surface of Silicon Crystals Irradiated in High-Voltage Electron Microscope,” Sov. Phys. Solid State, vol. 24, no. 7, 1163–1166 (1982).
A. L. Aseev, S. G. Denisenko, and L. I. Fedina, “Influence of the Processes of Point Defect Annihilation on the Growth of Interstitial Atom Clusters during Irradiation of Si and Ge Crystals with Electrons in a High-Voltage Electron Microscope,” Sov. Phys. Semicond., vol. 25, no. 4, 352–355 (1991).
Y.-S. Shin and C.-K. Kim, “The Effect of Si-SiO2 Interface on the Excess Point Defect Distribution in Silicon,” in: Semiconductor Processing, edited by D. C. Gupta, ASTM Special Technical Publication, vol. 850, 283–293 (1984).
S. W. Crowder, P. B. Griffin, and J. D. Plummer, “Nitridation Enhanced Diffusion of Antimony in Bulk and Silicon-on-Insulator Material,” in: Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, C. S. Murthy, and S. T. Dunham, Electrochem. Soc. Proc, vol. 96-4, 54–63 (1996).
H. Rücker, B. Heinemann, and R. Kurps, “Nonequilibrium Point Defects and Dopant Diffusion in Carbon-Rich Silicon,” Phys. Rev. B, vol. 64, 073202 (2001).
Y. Shin and C. Kim, “A Two-Dimensional Model for the Excess Interstitial Distribution in Silicon during Thermal Oxidation,” IEEE Trans. Electron Devices, vol. ED-31, no. 6, 797–800 (1984).
D. Collard and K. Taniguchi, “IMPACT — A Point-Defect-Based Two-Dimensional Process Simulator: Modeling the Lateral Oxidation-Enhanced Diffusion of Dopants in Silicon,” IEEE Trans. Electron Devices, vol. ED-33, no. 10, 1454–1462 (1986).
C. S. Rafferty, M. E. Law, P. B. Griffin, J. D. Shott, R. W. Dutton, and J. D. Plummer, “Modeling LOCOS Effects on Diffusion,” in: Semiconductor Silicon, edited by H. R. Huff, T. Abe, and B. Kolbesen, Electrochem. Soc. Proc, vol. 86-4, 426–436 (1986).
M. D. Giles, “Transient Phosphorus Diffusion below the Amorphization Threshold,” Electrochem. Soc. Extended Abstracts, vol. 90-1, 369–370 (1990).
Y. Shibata, K. Taniguchi, and C. Hamaguchi, “Stripe Width Dependence of Oxidation-Enhanced Diffusion in Submicron Local Oxidation of Silicon Structures,” J. Appl. Phys., vol. 70, no. 9, 4846–851 (1991).
H. Jacobs, A. von Schwerin, D. Scharfetter, and F. Lau, “MOSFET Reverse Short Channel Effect Due to Silicon Interstitial Capture in Gate Oxide,” in: Technical Digest of the 1993 International Electron Devices Meeting (IEDM), Piscataway: IEEE, 307–310 (1993).
J. J. van Dort, H. Lifka, P. C. Zalm, R. C. M. de Kruif, W. B. de Boer, P. H. Woerlee, C. A. H. Juffermans, A. J. Walker, J. W. Slotboom, and N. E. B. Cowern, “A High-Resolution Study of Two-Dimensional Oxidation-Enhanced Diffusion in Silicon,” in: Technical Digest of the 1993 International Electron Devices Meeting (IEDM), Piscataway: IEEE, 299–302 (1993).
S. W. Crowder, P. B. Griffin, and J. D. Plummer, “Oxidation Enhanced Dopant Diffusion in Thin SOI Films,” in: Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, K. Taniguchi, and C. S. Murthy, Electrochem. Soc. Proc, vol. 93-6, 108–119 (1993).
A. M. Agarwal and S. T. Dunham, “Models for the Physical Extent of Point Defect Interactions in Silicon,” in: Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, K. Taniguchi, and C. S. Murthy, Electrochem. Soc. Proc, vol. 93-6, 149–158 (1993).
M. J. van Dort, H. Lifka, P. C. Zalm, W. B. de Boer, P. H. Woerlee, J. W. Slotboom, and N. E. B. Cowern, “New Technique for Measuring Two-Dimensional Oxidation-Enhanced Diffusion in Silicon at Low Temperatures,” Appl. Phys. Lett., vol. 64, no. 16, 2130–2132 (1994).
S. W. Crowder, C. J. Hsieh, P. B. Griffin, and J. D. Plummer, “Effect of Buried Si-SiO2 Interfaces on Oxidation and Implant-Enhanced Dopant Diffusion in Thin Silicon-on-Insulator Films,” J. Appl. Phys., vol. 76, no. 5, 2756–2764 (1994).
M. J. van Dort, W. van der Wei, J. W. Slotboom, N. E. B. Cowern, M. P. G. Knuvers, J. Lifka, and P. C. Zalm, “Two-Dimensional Transient Enhanced Diffusion and Its Impact on Bipolar Transistors,” in: Technical Digest of the 1994 International Electron Devices Meeting (IEDM), Piscataway: IEEE, 865–868 (1994).
D. R. Lim, C. S. Rafferty, and F. P. Klemens, “The Role of the Surface in Transient Enhanced Diffusion,” Appl. Phys. Lett., vol. 67, no. 16, 2302–2304 (1995).
A. Agarwal, H.-J. Gossmann, D. J. Eaglesham, L. Pelaz, D. C. Jacobson, T. E. Haynes, and Y. E. Erokhin, “Reduction of Transient Diffusion from 1-5 keV Si+ Ion Implantation Due to Surface Annihilation of Interstitials,” Appl. Phys. Lett., vol. 71, no. 21, 3141–3143 (1997).
B. Colombeau, F. Cristiano, G. Ben Assayag, A. Altibelli, and A. Claverie, “Energetics of Interstitial Defects and TED in Ultra Low Energy Implants,” in: Ion Implantation Technology — 2000, edited by H. Ryssel, L. Frey, J. Gyulai, and H. Glawischnig, Piscataway: IEEE, 107–110 (2000).
B. Colombeau, F. Cristiano, A. Altibelli, C. Bonafos, G. Ben Assayag, and A. Claverie, “Atomistic Simulations of Extrinsic Defects Evolution and Transient Enhanced Diffusion in Silicon,” Appl. Phys. Lett., vol. 78, no. 7, 940–942 (2001).
S. Mirabella, A. Coati, D. De Salvador, E. Napolitani, A. Mattoni, G. Bisognin, M. Berti, A. Camera, A. V. Drigo, S. Scalese, S. Pulvirenti, A. Terrasi, and F. Priolo, “Interaction between Self-Interstitials and Substitutional C in Silicon: Interstitial Trapping and C Clustering Mechanism,” Phys. Rev. B, vol. 65, 045209 (2002).
N. A. Stolwijk, W Lerch, and A. Giese, “Modeling of the Surface Annihilation of Excess Self-Interstitials Generated by Gold Diffusion into Silicon,” in: Semiconductor Process and Device Performance Modelling, edited by S. T. Dunham and J. S. Nelson, Mat. Res. Soc. Symp. Proc, vol.490, 111–116 (1998).
J. Boussey-Said, N. Guillemot, and J. Stoemenos, “Recombination of Oxidation-Induced Silicon Interstitials at Si/SiO2 Interfaces in SOI Structures,” in: 7992 IEEE International SOI Conference, New York: IEEE, 70–71 (1992).
S. W. Crowder, P. B. Griffin, C. J. Hsieh, G. Y. Wei, J. D. Plummer, and L. P. Allen, “Oxidation Enhanced Dopant Diffusion in Separation by Implantation by Oxygen Silicon-on-Insulator Material,” Appl. Phys. Lett, vol. 64, no. 24, 3264–3265 (1994).
S. Pindl, M. Biebl, E. Hammer, H. Schäfer, and H. v. Philipsborn, “Oxidation Enhanced Diffusion of Boron in Silicon-on-Insulator Substrates,” in: ULSI Science and Technology/1997, edited by H. Z. Massoud, H. Iwai, C. Claeys, and R. B. Fair, Electrochem. Soc. Proc, vol. 97-3, 623–631 (1997).
S. M. Hu, “Kinetics of Interstitial Supersaturation during Oxidation of Silicon,” Appl. Phys. Lett., vol. 43, no. 5, 449–451 (1983).
M. E. Law, Y. M. Haddara, and K. S. Jones, “Effect of the Silicon/Oxide Interface on Interstitials: Di-Interstitial Recombination,” J. Appl. Phys., vol. 84, no. 7, 3555–3560 (1998).
P. B. Griffin and J. D. Plummer, “Implications of Oxidation Models on the Point Defect Behavior in the Silicon Substrate,” in: The Physics and Chemistry of SiO 2 and the Si-SiO 2 Interface, edited by C. R. Helms and B. E. Deal, New York: Plenum Press, 469–476 (1988).
W. A. Tiller, “On the Kinetics of the Thermal Oxidation of Silicon. III. Coupling with Other Key Phenomena,” J. Electrochem. Soc, vol. 128, no. 3, 689–697 (1981).
A. M. Lin, R. W. Dutton, D. A. Antoniadis, and W. A. Tiller, “The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si-SiO Interface during Thermal Oxidation of Silicon,” J. Electrochem. Soc, vol. 128, no. 5, 1121–1130 (1981).
S. T. Dunham and J. D. Plummer, “Point-Defect Generation during Oxidation of Silicon in Dry Oxygen. I. Theory,” J. Appl. Phys., vol. 59, no. 7, 2541–2550 (1986).
S. T. Dunham and J. D. Plummer, “Point-Defect Generation during Oxidation of Silicon in Dry Oxygen. II. Comparison to Experiment,” J. Appl. Phys., vol. 59, no. 7, 2551–2561 (1986).
S. T. Dunham, “Interstitial Kinetics near Oxidizing Silicon Interfaces,” J. Electrochem. Soc, vol. 136, no. 1, 250–254 (1989).
K. Taniguchi, Y Shibata, and C. Hamaguchi, “Theoretical Model for Self-Interstitial Generation at the Si/SiO2 Interface during Thermal Oxidation of Silicon,” J. Appl. Phys., vol. 65, no. 7, 2723–2727 (1989).
Y Shibata, S. Hashimoto, K. Taniguchi, and C. Hamaguchi, “Oxidation Enhanced Diffusion of Phosphorus over a Wide Range of Oxidation Rates,” J. Electrochem. Soc, vol. 139, no. 1, 231–237 (1992).
S. T. Ahn, H. W. Kennel, W A. Tiller, and J. D. Plummer, “Vacancy Supersaturation in Si under SiO2 by SiO Formation during Annealing in Ar,” J. Appl Phys., vol. 65, no. 8, 2957 (1989).
S. T. Dunham, “Interaction of Silicon Point Defects with SiO2 Films,” J. Appl. Phys., vol. 71, no. 2, 685–696 (1992).
N. Guillemot, D. Tsoukalas, C. Tsamis, J. Margail, A. M. Papon, and J. Stoemenos, “Suppression Mechanisms for Oxidation Stacking Faults in Silicon on Insulator,” J. Appl. Phys., vol. 71, no. 4, 1713–1720 (1992).
C. Tsamis, D. Tsoukalas, and J. Stoemenos, “Comparison between the Growth and Shrinkage of Oxidation Stacking Faults in Silicon and Silicon on Insulator,” J. Appl. Phys., vol. 73, no. 7, 3246–3249 (1993).
C. Tsamis and D. Tsoukalas, “Model for the Recombination Velocity of Silicon Interstitials at Nonoxidizing Interfaces,” J. Appl. Phys., vol. 84, no. 12, 6650–6658 (1998).
M. Hane, T. Ikezawa, M. Hiroi, and M. Matsumoto, “Dopant Diffusion Model Refinement and Its Impact on the Calculation of Reverse Short Channel Effect,” in: Technical Digest of the 1996 International Electron Devices Meeting (IEDM), Piscataway: IEEE, 803–806 (1996).
D. Tsoukalas, C. Tsamis, and J. Stoemenos, “Investigation of Silicon Interstitial Reactions with Insulating Films Using the Silicon Wafer Bonding Technique,” Appl. Phys. Lett., vol. 63, no. 23, 3167–3169 (1993).
J. F. Shepard, R. J. Dendall, and P. Balk, “Study of a Liquid Source Boron Diffusion Process for Silicon,” Electrochem. Soc. Extended Abstracts, vol. 66-2, no. 196, 87–90 (1966).
G. N. Wills, “The Orientation Dependent Diffusion of Boron in Silicon under Oxidizing Conditions,” Solid-State Electronics, vol. 12, 133–134 (1969).
K. E. Bean and P. S. Gleim, “The Influence of Crystal Orientation on Silicon Semiconductor Processing,” Proc. IEEE, vol. 57, no. 9, 1469–1476 (1969).
R. A. Kovalev, V. B. Bernikov, Y. I. Pashintsev, and V. A. Marasanov, “Boron Diffusion in Silicon along Different Crystallographic Orientations,” Sov. Phys. Solid State, vol. 11, no. 7, 1571–1573 (1970).
M. Okamura, “The Orientation Dependence of Boron Diffusion,” Jpn. J. Appl. Phys., vol. 9, 848–849 (1970).
T. C. Chan and C. C. Mai, “Diffusion of Boron, Phosphorus, Arsenic, and Antimony into (100) and (111) Silicon Slices,” Proc. IEEE, vol. 58, no. 4, 588–589 (1970).
P. S. Dobson, “The Effect of Oxidation on Anomalous Diffusion in Silicon,” Phil. Mag., vol. 24, 567–576 (1971).
D. J. D. Thomas, “Surface Damage and Copper Precipitation in Silicon,” phys. stat. sol., vol. 3, 2261 (1963).
H. J. Queisser and P. G. G. van Loon, “Growth of Lattice Defects in Silicon during Oxidation,” J. Appl. Phys., vol. 35, 3066–3067 (1964).
G. R. Booker and W. J. Tunstall, “Diffraction Contrast Analysis of Two-Dimensional Defects Present in Silicon after Annealing,” Phil. Mag., vol. 13, 71–83 (1966).
R. J. Jaccodine and C. M. Drum, “Extrinsic Stacking Faults in Silicon after Heating in Wet Oxygen,” Appl. Phys. Lett., vol. 8, no. 1, 29–30 (1966).
A. W. Fisher and J. A. Amick, “Defect Structure on Silicon Surfaces after Thermal Oxidation,” J. Electrochem. Soc, vol. 113, no. 10, 1054–1060 (1966).
M. L. Joshi, “Stacking Faults in Steam-Oxidized Silicon,” Acta Metallurgica, vol. 14, 1157–1172 (1966).
O. L. Krivanek and D. M. Maher, “The Core Structure of Extrinsic Stacking Faults in Silicon,” Appl. Phys. Lett., vol. 32, no. 8, 451–453 (1978).
D. A. Antoniadis, “Oxidation-Induced Point Defects in Silicon,” J. Electrochem. Soc, vol. 129, no. 5, 1093–1097 (1982).
S. M. Hu, “Interstitial and Vacancy Concentrations in the Presence of Interstitial Injection,” J. Appl. Phys., vol. 57, no. 4, 1069–1075 (1985).
R. Francis and P. S. Dobson, “The Effect of Oxidation on the Diffusion of Phosphorus in Silicon,” J. Appl. Phys., vol. 50, no. 1, 280–284 (1979).
C. Hill, “Measurements of Local Diffusion Coefficients in Planar Device Structures,” in: Semiconductor Silicon, edited by H. R. Huff, R. J. Kriegler, and Y. Takeishi, Electrochem. Soc. Proc, vol. 81-5, 988–1006 (1981).
S. Mizuo and H. Higuchi, “Effects of Oxidation on Aluminium Diffusion in Silicon,” Jpn. J. Appl. Phys., vol. 21, no. 1, 56–60 (1982).
S. Mizuo and H. Higuchi, “Oxidation Effects on Gallium Diffusion in Silicon,” Denki Kagaku, vol. 50, no. 4, 338–343 (1982).
T. Y Tan and B. J. Ginsberg, “Observation of Oxidation-Enhanced and-Retarded Diffusion of Antimony in Silicon: The Behavior of (111) Wafers,” in: Defects in Semiconductors II, edited by S. Mahajan and J. W. Corbett, Mat. Res. Soc. Symp. Proc, vol. 14, 141–145 (1983).
S. T. Dunham and N. Jeng, “Dopant Diffusion during High-Temperature Oxidation of Silicon,” Appl. Phys. Lett., vol. 59, no. 16, 2016–2018 (1991).
Y Hayafuji, K. Kajiwara, and S. Usui, “Shrinkage and Growth of Oxidation Stacking Faults during Thermal Nitridation of Silicon and Oxidized Silicon,” J. Appl. Phys., vol. 53, no. 12, 8639–8646 (1982).
S. Mizuo, T. Kusaka, A. Shintani, M. Nanba, and H. Higuchi, “Effect of Si and SiO2 Thermal Nitridation on Impurity Diffusion and Oxidation Induced Stacking Fault Size in Si,” J. Appl. Phys., vol. 54, no. 7, 3860–3866 (1983).
P. Fahey, G. Barbuscia, M. Moslehi, and R. W. Dutton, “Kinetics of Thermal Nitridation Processes in the Study of Dopant Diffusion Mechanisms in Silicon,” Appl. Phys. Lett., vol. 46, no. 8, 784–786 (1985).
S. S. Wong and T. W. Ekstedt, “CMOS Well Drive-in in NH3 for Reduced Lateral Diffusion and Heat Cycle,” IEEE Electron Device Letters, vol. EDL-6, no. 12, 659–661 (1985).
N. K. Chen and C. Lee, “Oxynitridation-Enhanced Diffusion of Boron in (100) Silicon,” J. Electrochem. Soc, vol. 140, no. 8, 2390–2394 (1993).
M. M. Moslehi, C. J. Han, K. C. Saraswat, C. R. Helms, and S. Shatas, “Compositional Studies of Thermally Nitrided Silicon Dioxide (Nitroxide)” J. Electrochem. Soc, vol. 132, no. 9, 2189–2197 (1985).
C. J. Han, M. M. Moslehi, C. R. Helms, and K. C. Saraswat, “Time-Dependent Compositional Variation in SiO2 Films Nitrided in Ammonia,” Appl. Phys. Lett., vol. 46, no. 7, 641–643 (1995).
T. K. Mogi, M. O. Thompson, H.-J. Gossmann, D. J. Eaglesham, C. S. Rafferty, J. S. Luftman, F. C. Unterwald, T. Boone, and J. M. Poate, “Dopant Diffusion in Si(100) Delta-Doping Super-lattice during Thermal Nitridation and Native Si Point Defect Properties,” Electrochem. Soc. Extended Abstracts, vol. 95-1, 473–474 (1995).
S. T. Ahn, H. W. Kennel, J. D. Plummer, and W. A. Tiller, “Film Stress-Related Vacancy Supersaturation in Silicon under Low-Pressure Chemical Vapor Deposited Silicon Nitride Films,” J. Appl. Phys., vol. 64, no. 10, 4914–4919 (1988).
K. Osada, S. Matsumoto, M. Yoshida, and E. Arai, “Effect of Stress in the Deposited Silicon Nitride Films on Boron Diffusion in Silicon,” in: Process Physics and Modeling in Semiconductor Technology, edited by G. R. Srinivasan, K. Taniguchi, and C. S. Murthy, Electrochem. Soc. Proc, vol. 93-6, 98–107 (1993).
S. M. Hu, “Properties of Amorphous Silicon Nitride Films,” J. Electrochem. Soc, vol. 113, no. 7, 693–698 (1966).
R. G. Frieser, “Direct Nitridation of Silicon Substrates,” J. Electrochem. Soc, vol. 115, no. 10, 1092–1094 (1968).
T. Ito, S. Hijiya, T. Nozaki, H. Arakawa, M. Shinoda, and Y. Fukukawa, “Very Thin Silicon Nitride Films Grown by Direct Thermal Reaction with Nitrogen,” J. Electrochem. Soc, vol. 125, no. 3, 448–52 (1978).
R. V. Giridhar and K. Rose, “Low Pressure Direct Thermal Nitridation of Si in Nitrogen,” in: Silicon Nitride Thin Insulating Films, edited by V. J. Kapoor and H. J. Stein, Electrochem. Soc Proc, vol. 83-8, 312–323 (1983).
T. Kook and R. J. Jaccodine, “Diffusion of Sb in (111) Silicon during N2 Heat-Treatment,” J. Electrochem. Soc, vol. 132, no. 4, 989–990 (1985).
M. Jacob, P. Pichler, H. Ryssel, R. Falster, M. Cornara, D. Gambaro, M. Olmo, and M. Pagani, “Observation of Vacancy Enhancement during Rapid Thermal Annealing in Nitrogen,” in: Gettering and Defect Engineering in Semiconductor Technology GADEST’97, edited by C. Claeys, J. Vanhellemont, H. Richter, and M. Kittler, Solid State Phenomena, vol. 57-58, 349–354 (1997).
M. Wittmer and K. N. Tu, “Low-Temperature Diffusion of Dopant Atoms in Silicon during Interfacial Suicide Formation,” Phys. Rev. B, vol. 29, no. 4, 2010–2020 (1984).
M. Wittmer, P. Fahey, G. J. Scilla, and S. S. Iyer, “Novel Diffusion Phenomenon of Dopants in Silicon at Low Temperatures,” Phys. Rev. Lett., vol. 66, no. 5, 632–635 (1991).
M. Wittmer, P. Fahey, J. Cotte, S. S. Iyer, and G. J. Scilla, “Silicide Formation and Dopant Diffusion,” Phys. Rev. B, vol. 45, no. 19, 11383–11386 (1992).
J. W. Honeycutt and G. A. Rozgonyi, “Enhanced Diffusion of Sb-Doped Layers during Co and Ti Reactions with Si,” Appl. Phys. Lett., vol. 58, no. 12, 1302–1304 (1991).
S. M. Hu, “Point Defect Generation and Enhanced Diffusion in Silicon Due to Tantalum Suicide Overlay,” Appl. Phys. Lett, vol. 51, no. 5, 308–310 (1987).
A. G. Italyantsev and A. Y. Kuznetsov, “Excess Vacancy Generation in Silicon during Surface Silicide Formation,” Applied Surface Science, vol. 73, 203–208 (1993).
I. Ohdomari, K. Konuma, M. Takano, T. Chikyow, H. Kawarada, J. Nakanishi, and T. Ueno, “Dopant Redistribution during Silicide Formation,” in: Thin Films — Interfaces and Phenomena, edited by R. J. Nemanich, P. S. Ho, and S. S. Lau, Mat. Res. Soc. Symp. Proc, vol. 54, 63–72 (1986).
K. Maex, R. D. Keersmaecker, C. Claeys, J. Vanhellemont, and P. F. A. Alkemade, “The Kinetics of Suicide Formation Using Rapid Thermal Processing and Related Defect behavior,” in: Semiconductor Silicon, edited by H. R. Huff, T. Abe, and B. Kolbesen, Electrochem. Soc. Proc, vol. 86-4, 346–357 (1986).
D. S. Wen, P. L. Smith, C. M. Osburn, and G. A. Rozgonyi, “Defect Annihilation in Shallow p+ Junctions Using Titanium Suicide,” Appl. Phys. Lett., vol. 51, no. 15, 1182–1184 (1987).
W. Lur, J. Y. Cheng, C. H. Chu, M. H. Wang, T. C. Lee, Y. J. Wann, W Y. Chao, and L. J. Chen, “Effects of Silicide Formation on the Removal of End-of-Range Ion Implantation Damage in Silicon,” in: Ion Beam Modification of Materials, edited by S. Namba, N. Itoh, and M. Iwaki, Nuclear Instruments and Methods in Physics Research B, vol. 39, 297–301 (1989).
J. Chen, H. G. Robinson, S. B. Hemer, and K. S. Jones, “Effect of Oxygen on Point Defect Injection during Silicidation of Titanium,” in: Semiconductor Silicon, edited by H. R. Huff, W. Bergholz, and K. Sumino, Electrochem. Soc. Proc, vol. 94-10, 1029–1040 (1994).
U. Erlesand, M. Östling, B. G. Svensson, and P. Gas, “Point Defect Generation during Silicide Formation,” Applied Surface Science, vol. 53, 224–229 (1991).
P. Kringhøj, “Silicon Interstitials: Injection during Palladium Silicide Formation and Trapping by Ion Implantation Damage,” Appl Phys. Lett., vol. 68, no. 2, 247–249 (1996).
J. Chen, H. G. Robinson, and K. S. Jones, “Effect of Oxygen on Point Defect Injection during Silicidation of Titanium, ” Electrochem. Soc. Extended Abstracts, vol. 94-1, 788 (1994).
W. Zulehner, “Historical Overview of Silicon Crystal Pulling Development,” Materials Science and Engineering B, vol. 73, 7–15 (2000).
A. J. R. de Kock, “Microdefects in Dislocation-Free Silicon Crystals,” Philips Res. Repts Suppl, vol. 28, no. 1, 1–105 (1973).
H. Föil and B. O. Kolbesen, “Formation and Nature of Swirl Defects in Silicon,” Appl. Phys., vol. 8, 319–331 (1975).
H. Föil, U. Gösele, and B. O. Kolbesen, “Swirl-Defects in Silicon,” in: Semiconductor Silicon 1977, edited by H. R. Huff and E. Sirtl, Electrochem. Soc Proc, vol. 77-2, 565–574 (1977).
P. J. Roksnoer and M. M. B. van den Boom, “Microdefects in a Non-Striated Distribution in Floating-Zone Silicon Crystals,” J. Crystal Growth, vol. 53, 563–573 (1981).
W. von Ammon, E. Dornberger, H. Oelkrug, and H. Weidner, “The Dependence of Bulk Defects on the Axial Temperature Gradient of Silicon Crystals during Czochralski Growth,” J. Crystal Growth, vol. 151, 273–277 (1995).
E. Dornberger, D. Graf, and M. Suhren, “Influence of Boron on the Oxidation-Induced Stacking Fault Ring in Czochralski Silicon Crystals,” J. Crystal Growth, vol. 180, 343–352 (1997).
V. V. Voronkov and R. Falster, “Dopant Effect on Point Defect Incorporation into Growing Silicon Crystal,” J. Appl. Phys., vol. 87, no. 9, 4126–1129 (2000).
V. V. Voronkov and R. Falster, “Intrinsic Growth and Impurities in Silicon Crystal Growth,” J. Electrochem. Soc, vol. 149, no. 3, G167–G174 (2002).
K. Harada, H. Tanaka, T. Watanabe, and H. Furuya, “Defects in the Oxidation-Induced Stacking Fault Ring Region in Czochralski Silicon Crystal,” Jpn. J. Appl. Phys., Part 1, vol. 37, no. 6A, 3194–3199 (1998).
M. Hasabe, Y. Takeoka, S. Shinoyama, and S. Naito, “Formation Process of Stacking Faults with Ringlike Distribution in CZ-Si Wafers,” Jpn. J. Appl. Phys., vol. 28, no. 11, L1999–L2002 (1989).
T. Yamauchi, Y. Tsumori, T. Nakashizu, H. Esaka, S. Takao, and S. Shinoyama, “Application of Copper-Decoration Method to Characterize as-Grown Czochralski-Silicon,” Jpn. J. Appl. Phys., Part 2, vol. 31, no. 4B, L439–L442 (1992).
H. Shimizu, C. Munakata, N. Honma, S. Aoki, and Y. Kosaka, “Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device Processing,” Jpn. J. Appl. Phys., Part I, vol. 31, no. 6A, 1817–1822 (1992).
H. Riemann and A. Liidge, “Intrinsic Defects in FZ Silicon and Their Impact on X-Ray PIN Sensor Parameters,” in: High Purity Silicon VI, edited by C. L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H. J. Dawson, Electrochem. Soc. Proc, vol. 2000-17, 509–515 (2000).
J. Gebauer, F. Rudolf, A. Polity, R. Krause-Rehberg, J. Martin, and P. Becker, “On the Sensitivity Limit of Positron Annihilation: Detection of Vacancies in As-Grown Silicon,” Appl. Phys. A, vol. 68, 411–416 (1999).
S. Dannefaer, T. Bretagnon, K. Abdurahman, D. Kerr, and S. Hahn, “Heat-Treatment Induced Defects in CZ-Silicon,” in: Defect Engineering in Semiconductor Growth, Processing and Device Technology, edited by S. Ashok, J. Chevallier, K. Sumino, and E. Weber, Mat. Res. Soc. Symp. Proc, vol. 262, 671–676 (1992).
F. Quast, P. Pichler, H. Ryssel, and R. Falster, “Vacancy-Nitrogen Complexes in Float-Zone Silicon,” in: High Purity Silicon VI, edited by C. L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H. J. Dawson, Electrochem. Soc. Proc, vol. 2000-17, 156–163 (2000).
M. Hourai, T. Ono, S. Umeno, and T. Tanaka, “Control of Grown-in Defects in Nitrogen-Doped CZ Silicon Crystals for New Generation Devices,” in: Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing III— DECON2001, edited by B. O. Kolbe-sen, C. Claeys, P. Stallhofer, and F. Tardif, Electrochem. Soc. Proc, vol. 2001-29, 19–34 (2001).
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Pichler, P. (2004). Intrinsic Point Defects. In: Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0597-9_2
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