Abstract
One of the most remarkable phenomena in the early days of silicon technology was the “emitterpush” effect which causes an enhanced diffusion of dopants below regions with high phosphorus concentrations (see Section 5.8.3). To explain it, it was soon concluded that some sort of farranging “interaction particle” is needed. Since other impurities as well as extended defects could be excluded, this role was equally soon attributed to the intrinsic point defects introduced in Section 1.1.3. Indeed, intrinsic point defects play important roles in nearly all theories of impurity diffusion in silicon. Therefore, before proceeding with the latter in the next chapters, the properties of intrinsic point defects will be reviewed in the following.
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Pichler, P. (2004). Intrinsic Point Defects. In: Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0597-9_2
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