Abstract
This chapter addresses the extraction of RF quantities such as Y- and related parameters, derived quantities such as stability factors and cut-off frequencies, and, last but not least, small-signal equivalent circuit elements for various topologies. It further provides a view of the physical understanding of the bias dependence of small-signal equivalent circuit elements in HEMTs and HBTs in analytcial models and TCAD approaches.
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© 2004 Springer-Verlag Wien
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Palankovski, V., Quay, R. (2004). RF Parameter Extraction for HEMTs and HBTs. In: Analysis and Simulation of Heterostructure Devices. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0560-3_4
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DOI: https://doi.org/10.1007/978-3-7091-0560-3_4
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7193-6
Online ISBN: 978-3-7091-0560-3
eBook Packages: Springer Book Archive