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Drift of Minority Carriers in the Presence of Trapping

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Halbleiter und Phosphore / Semiconductors and Phosphors / Semiconducteurs et Phosphores

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Abstract

It is known that in most semiconductors and photoconductors excitation of excess free carrier densities Δn and Δp is accompanied by some “trapping” of either or both carriers in localised levels in the forbidden band. The population of these levels changes by Δn t and we have the general relation:

EquationSource% MathType!MTEF!2!1!+- % feaagCart1ev2aqatCvAUfeBSjuyZL2yd9gzLbvyNv2CaerbuLwBLn % hiov2DGi1BTfMBaeXatLxBI9gBaerbd9wDYLwzYbItLDharqqtubsr % 4rNCHbGeaGqiVu0Je9sqqrpepC0xbbL8F4rqqrFfpeea0xe9Lq-Jc9 % vqaqpepm0xbba9pwe9Q8fs0-yqaqpepae9pg0FirpepeKkFr0xfr-x % fr-xb9adbaqaaeGaciGaaiaabeqaamaabaabaaGcbaGaeuiLdqKaam % iCaiabg2da9iabfs5aejaad6gacqGHRaWkcqqHuoarcaWGUbWaaSba % aSqaaiaadshaaeqaaOGaaiOlaaaa!40CB!]]</EquationSource><EquationSource Format="TEX"><![CDATA[$$\Delta p = \Delta n + \Delta {n_t}.$$
(1)

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Authors and Affiliations

  1. Research Laboratories, The General Electric Co. Ltd., Wembely, Middlesex, England

    A. K. Jonscher

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  1. A. K. Jonscher
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Editors and Affiliations

  1. München, Deutschland

    Michael Schön

  2. Erlangen, Deutschland

    Heinrich Welker

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© 1958 Springer Fachmedien Wiesbaden

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Jonscher, A.K. (1958). Drift of Minority Carriers in the Presence of Trapping. In: Schön, M., Welker, H. (eds) Halbleiter und Phosphore / Semiconductors and Phosphors / Semiconducteurs et Phosphores. Vieweg+Teubner Verlag, Wiesbaden. https://doi.org/10.1007/978-3-663-02557-3_35

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  • DOI: https://doi.org/10.1007/978-3-663-02557-3_35

  • Publisher Name: Vieweg+Teubner Verlag, Wiesbaden

  • Print ISBN: 978-3-663-00644-2

  • Online ISBN: 978-3-663-02557-3

  • eBook Packages: Springer Book Archive

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