Structure of domain boundaries: group IV elements and IV–IV compounds: SiC

  • J. WollschlägerEmail author
Part of the Condensed Matter book series (volume 45B)


This chapter discusses the structure of domain boundary in silicon carbide measured using various experimental techniques.


  1. [97Kit]
    Kitabatake, M.: Phys. Status Solidi (B). 202, 405 (1997)ADSCrossRefGoogle Scholar
  2. [98Uch]
    Uchida, M., Kitabatake, M.: Thin Solid Films. 335, 32 (1998)ADSCrossRefGoogle Scholar
  3. [00Der]
    Derycke, V., Soukiassian, P., Mayne, A., Dujardin, G.: Surf. Sci. 446, L101 (2000)ADSCrossRefGoogle Scholar
  4. [00Kit]
    Kitabatake, M.: Thin Solid Films. 369, 257 (2000)ADSCrossRefGoogle Scholar
  5. [02Sou]
    Soukassian, P.: Mater. Sci. Eng. B96, 115 (2002)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag GmbH Germany 2018

Authors and Affiliations

  1. 1.Fachbereich PhysikUniversität OsnabrückOsnabrückGermany

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