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Angle-Resolved Photoemission Spectroscopy on High-Temperature Superconductors pp 95–113Cite as

Phase Diagram and High T\(_c\) Superconductivity in Single-Layer FeSe Films

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Abstract

In this chapter, we will present an electronic phase diagram for the single-layer FeSe film grown on SrTiO\(_3\) substrate. The charge carrier concentration has been tuned over a wide range through an extensive annealing procedure. Two distinct phases that compete during the annealing process have been clearly identified. For clarity, we call the electronic phase at low doping as N phase in which no superconductivity is observed. The electronic structure of the N phase bears some resemblances to that of the antiferromagnetic parent compound of the Fe-based superconductors. Another phase (S phase) appears with the increase of carrier concentration and the suppression of the N phase. S phase shows distinct electronic band structure from that of the N phase, on which superconductivity is observed when the carrier concentration reaches a critical value. The superconducting transition temperature \(\mathrm{T}_c\) is also tunable with carrier concentration. A maximum \(\mathrm{T}_c\) of 65 ± 5 K was found at the optimal doping.

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Authors and Affiliations

  1. Institute of Physics, Chinese Academy of Sciences, Beijing, China

    Junfeng He

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  1. Junfeng He
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He, J. (2016). Phase Diagram and High T\(_c\) Superconductivity in Single-Layer FeSe Films. In: Angle-Resolved Photoemission Spectroscopy on High-Temperature Superconductors. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-52732-0_7

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  • DOI: https://doi.org/10.1007/978-3-662-52732-0_7

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