Abstract
As a pseudobinary system material with the characteristics of adjustable band gap, high optical absorption coefficient, long carrier lifetime, high electron mobility, etc. (Proceedings of SPIE, V7388:P73880J-1, 2009), HgCdTe has always been the preferred material for fabricating infrared detectors for many years. As the requirements of the infrared systems on the detector performances increase continuously, the HgCdTe detector technology has become significant.
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He, L., Yang, D., Ni, G. (2016). HgCdTe Detector Chip Technology. In: Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-52718-4_5
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DOI: https://doi.org/10.1007/978-3-662-52718-4_5
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