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HgCdTe Detector Chip Technology

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Book cover Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN

Abstract

As a pseudobinary system material with the characteristics of adjustable band gap, high optical absorption coefficient, long carrier lifetime, high electron mobility, etc. (Proceedings of SPIE, V7388:P73880J-1, 2009), HgCdTe has always been the preferred material for fabricating infrared detectors for many years. As the requirements of the infrared systems on the detector performances increase continuously, the HgCdTe detector technology has become significant.

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Author information

Authors and Affiliations

  1. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China

    Li He

  2. Tianjin Lishen Battery Joint-Stock Co. Ltd., Tianjin, China

    Dingjiang Yang

  3. Opto-electronics School, Beijing Institute of Technology, Beijing, China

    Guoqiang Ni

Authors
  1. Li He
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  2. Dingjiang Yang
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  3. Guoqiang Ni
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Correspondence to Li He .

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He, L., Yang, D., Ni, G. (2016). HgCdTe Detector Chip Technology. In: Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-52718-4_5

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  • DOI: https://doi.org/10.1007/978-3-662-52718-4_5

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