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CdTe/Si Composite Substrate and HgCdTe Epitaxy

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Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN

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Abstract

Advanced HgCdTe infrared focal plane array (IRFPA) technology extends the ability of optoelectronic detection from single-band two-dimensional target imaging to multiple spectral three-dimensional imaging. It is developing continuously toward the direction to achieve higher resolution and more accurate identification. In terms of material technologies, the IRFPAs are requiring larger size wafers with higher performances and more complex structures in order to better detect multiple information from multiple objectives.

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Authors and Affiliations

  1. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China

    Li He

  2. Tianjin Lishen Battery Joint-Stock Co. Ltd., Tianjin, China

    Dingjiang Yang

  3. Opto-electronics School, Beijing Institute of Technology, Beijing, China

    Guoqiang Ni

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He, L., Yang, D., Ni, G. (2016). CdTe/Si Composite Substrate and HgCdTe Epitaxy. In: Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-52718-4_3

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