Abstract
In this chapter, we report the observation of the quantum anomalous Hall effect (QAHE) in Cr-doped (Bi,Sb)2Te3 TI thin films grown by MBE method. At zero magnetic field and ultralow temperature (30 mK), the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e 2, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field (up to 18 T), the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value.
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Zhang, J. (2016). Quantum Anomalous Hall Effect. In: Transport Studies of the Electrical, Magnetic and Thermoelectric properties of Topological Insulator Thin Films. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-49927-6_5
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DOI: https://doi.org/10.1007/978-3-662-49927-6_5
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