Conclusions and Prospects

Abstract

With aggressive downsizing of MOSFETs, its performance suffers from great challenges due to the mobility degradation and source/drain parasitic resistance increment. And therefore, new materials and novel processes will be necessary for performance enhancement in nanoscaled CMOS technology. Compared with other high mobility materials, such as III–V material, carbon nanotube, and graphene, Ge is an attractive material for nanoscale MOSFETs because of its superior properties, especially its higher and more symmetric carrier mobilities.