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Conclusions and Prospects

  • Zhiqiang LiEmail author
Chapter
  • 353 Downloads
Part of the Springer Theses book series (Springer Theses)

Abstract

With aggressive downsizing of MOSFETs, its performance suffers from great challenges due to the mobility degradation and source/drain parasitic resistance increment. And therefore, new materials and novel processes will be necessary for performance enhancement in nanoscaled CMOS technology. Compared with other high mobility materials, such as III–V material, carbon nanotube, and graphene, Ge is an attractive material for nanoscale MOSFETs because of its superior properties, especially its higher and more symmetric carrier mobilities.

Keywords

Parasitic Resistance Contact Resistivity Dopant Activation Poor Thermal Stability Mobility Degradation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Copyright information

© Springer-Verlag Berlin Heidelberg 2016

Authors and Affiliations

  1. 1.Institute of MicroelectronicsPeking UniversityBeijingChina

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