Metal Germanide Technology

  • Zhiqiang LiEmail author
Part of the Springer Theses book series (Springer Theses)


Ge is considered as a potential channel material for high-performance CMOS device at future technology node for its high and more symmetric carrier mobility.


Root Mean Square Atomic Layer Deposition Rapid Thermal Annealing Contact Interface Contact Resistivity 
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© Springer-Verlag Berlin Heidelberg 2016

Authors and Affiliations

  1. 1.Institute of MicroelectronicsPeking UniversityBeijingChina

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