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Metal Germanide Technology

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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

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Abstract

Ge is considered as a potential channel material for high-performance CMOS device at future technology node for its high and more symmetric carrier mobility.

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Authors and Affiliations

  1. Institute of Microelectronics, Peking University, Beijing, 100871, China

    Zhiqiang Li

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  1. Zhiqiang Li
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Correspondence to Zhiqiang Li .

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Li, Z. (2016). Metal Germanide Technology. In: The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-49683-1_3

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  • DOI: https://doi.org/10.1007/978-3-662-49683-1_3

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-49681-7

  • Online ISBN: 978-3-662-49683-1

  • eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)

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