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Metal Germanide Technology

  • Zhiqiang LiEmail author
Chapter
  • 416 Downloads
Part of the Springer Theses book series (Springer Theses)

Abstract

Ge is considered as a potential channel material for high-performance CMOS device at future technology node for its high and more symmetric carrier mobility.

Keywords

Root Mean Square Atomic Layer Deposition Rapid Thermal Annealing Contact Interface Contact Resistivity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2016

Authors and Affiliations

  1. 1.Institute of MicroelectronicsPeking UniversityBeijingChina

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