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Ge-based Schottky Barrier Height Modulation Technology

  • Zhiqiang LiEmail author
Chapter
Part of the Springer Theses book series (Springer Theses)

Abstract

Germanium (Ge) has gained a lot of attention for its potential application as an alternative channel material due to its high and symmetric carrier mobilities. However, due to the low solid solubility and high diffusivity of n-type dopants in Ge, it is very challenging to obtain heavily doped shallow junction. Metal source/drain (S/D) is considered as a good approach for the S/D engineering, but the performance of Schottky Barrier (SB) MOSFET is still limited by some factors, and one of which is the severe Fermi-level pinning of metal/Ge contact.

Keywords

Schottky Barrier Rapid Thermal Annealing Reverse Current Schottky Barrier Height Rectification Ratio 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2016

Authors and Affiliations

  1. 1.Institute of MicroelectronicsPeking UniversityBeijingChina

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