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Ge-based Schottky Barrier Height Modulation Technology

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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

Part of the book series: Springer Theses ((Springer Theses))

Abstract

Germanium (Ge) has gained a lot of attention for its potential application as an alternative channel material due to its high and symmetric carrier mobilities. However, due to the low solid solubility and high diffusivity of n-type dopants in Ge, it is very challenging to obtain heavily doped shallow junction. Metal source/drain (S/D) is considered as a good approach for the S/D engineering, but the performance of Schottky Barrier (SB) MOSFET is still limited by some factors, and one of which is the severe Fermi-level pinning of metal/Ge contact.

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Authors and Affiliations

  1. Institute of Microelectronics, Peking University, Beijing, 100871, China

    Zhiqiang Li

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  1. Zhiqiang Li
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Correspondence to Zhiqiang Li .

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Li, Z. (2016). Ge-based Schottky Barrier Height Modulation Technology. In: The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-49683-1_2

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  • DOI: https://doi.org/10.1007/978-3-662-49683-1_2

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-49681-7

  • Online ISBN: 978-3-662-49683-1

  • eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)

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