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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

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Abstract

With continuous expansion of semiconductor consumption market, integrate circuit (IC) has developed rapidly in the past 40 years. As the foundation of information industry, IC has played an irreplaceable role in commerce, national defense, communication, and daily life. Meanwhile, the information industry based on IC has created remarkable economic benefits, which has exceeded that of traditional industries such as auto, fossil oil, and steel industry. Nowadays, IC is moving toward higher integration density, larger circuit speed, and lower power consumption, and all this will hasten humanity’s advance into information age.

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Authors and Affiliations

  1. Institute of Microelectronics, Peking University, Beijing, 100871, China

    Zhiqiang Li

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  1. Zhiqiang Li
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Li, Z. (2016). Introduction. In: The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-49683-1_1

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  • DOI: https://doi.org/10.1007/978-3-662-49683-1_1

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-49681-7

  • Online ISBN: 978-3-662-49683-1

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