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Analysis and Simulation of Temperature Characteristic of Sensitivity for SOI Lateral PIN Photodiode Gated by Transparent Electrode

  • Bin Wang
  • Yun ZengEmail author
  • Guoli Li
  • Yu Xia
  • Hui Xu
  • Caixia Huang
Conference paper
  • 535 Downloads
Part of the Communications in Computer and Information Science book series (CCIS, volume 592)

Abstract

This paper performs the structure and principle of SOI Lateral PIN photodiode Gated by Transparent Electrode. The temperature models of photocurrent and dark current are presented and validated by 2D ATLAS simulation. The variation of temperature on sensitivity is addressed when the LPIN PD-GTE is fully depleted. In contrast, the same work is presented on SOI Lateral PIN photo diode. The simulated results indicate the internal quantum efficiency of SOI LPIN PD-GTE remains about (95 %) with illumination of 400 nm wavelength as the temperature rises while the signal-noise-ratio decreases. SNR achieves \(10^7\) at 300 K and decreases to \(10^3\) at 473 K. FHWM is almost unchanged varing the temperatures. Thus, the sensitivity decreases when the temperature rises. Still, considering the fact that the operating temperature of the device generally cannot be 473 K or higher, SOI Lateral PD-GTE can be used at high temperature with good sensitivity.

Keywords

SOI Lateral PIN PD-GTE Temperature Sensitivity 

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Copyright information

© Springer-Verlag Berlin Heidelberg 2016

Authors and Affiliations

  • Bin Wang
    • 1
  • Yun Zeng
    • 1
    Email author
  • Guoli Li
    • 1
  • Yu Xia
    • 1
  • Hui Xu
    • 1
  • Caixia Huang
    • 1
  1. 1.School of Physics and Electronics ScienceHunan UniversityChangshaChina

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