Abstract
In this chapter, four works involving the application of self-assembly NSL processes to GaN-based material are introduced, mainly to deal with the light extraction issues of GaN LEDs so as to suppress light confinement through reduction of total internal reflections at the GaN/air interfaces. Two electroluminescence devices incorporating nanosphere-patterned structure are first discussed; the self-assembled array of spheres with varying dimensions serves as a hard mask to form the close-packed PhCs onto the ITO film (Li and Choi, J Appl Phys 110 (5), 2011, [1]) and the intermediate layer of semiconductor (Li et al, Appl Phys Lett 102 (18), 2013, [2]). To extend the function of sphere-pattern array, dimension-adjusting procedure is employed to overcome the restrictions of close-packed patterning and realize photonic bandgap structures. With a well-defined periodic arrangement and with sufficiently large refractive index contrast between GaN and ambient, a wavelength-tunable PBG in the visible region can be opened up, which forbids the propagation of light within a specific range of frequencies and is extremely useful in molding the flow of emitted light from an LED. Two non-close-packed periodic patterns, namely air-spaced (Li and Choi, J Appl Phys 109 (2), 2011, [3]) and clover-shaped (Li et al, Appl Phys Lett 100 (14), 2013, [4]) PBG structures, are highlighted in this chapter.
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References
Li KH, Choi HW (2011) InGaN light-emitting diodes with indium-tin-oxide photonic crystal current-spreading layer. J Appl Phys 110(5). Artn 053104. doi:10.1063/1.3631797
Li KH, Zang KY, Chua SJ, Choi HW (2013) III-nitride light-emitting diode with embedded photonic crystals. Appl Phys Lett 102(18). Artn 181117. doi:10.1063/1.4804678
Li KH, Choi HW (2011) Air-spaced GaN nanopillar photonic band gap structures patterned by nanosphere lithography. J Appl Phys 109(2). Artn 023107. doi:10.1063/1.3531972
Li KH, Ma ZT, Choi HW (2012) Tunable clover-shaped GaN photonic bandgap structures patterned by dual-step nanosphere lithography. Appl Phys Lett 100(14). Artn 141101. doi:10.1063/1.3698392
Wiesmann C, Bergenek K, Linder N, Schwarz UT (2009) Photonic crystal LEDs - designing light extraction. Laser Photonics Rev 3(3):262–286. doi:10.1002/lpor.200810053
Lee YJ, Kim SH, Huh J, Kim GH, Lee YH, Cho SH, Kim YC, Do YR (2003) A high-extraction-efficiency nanopatterned organic light-emitting diode. Appl Phys Lett 82(21):3779–3781. doi:10.1063/1.1577823
Kisielowski C, Kruger J, Ruvimov S, Suski T, Ager JW, Jones E, LilientalWeber Z, Rubin M, Weber ER, Bremser MD, Davis RF (1996) Strain-related phenomena in GaN thin films. Phys Rev B 54(24):17745–17753. doi:10.1103/PhysRevB.54.17745
Rieger W, Metzger T, Angerer H, Dimitrov R, Ambacher O, Stutzmann M (1996) Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films. Appl Phys Lett 68(7):970–972. doi:10.1063/1.116115
Takeuchi T, Wetzel C, Yamaguchi S, Sakai H, Amano H, Akasaki I, Kaneko Y, Nakagawa S, Yamaoka Y, Yamada N (1998) Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect. Appl Phys Lett 73(12):1691–1693. doi:10.1063/1.122247
Leroux M, Grandjean N, Laugt M, Massies J, Gil B, Lefebvre P, Bigenwald P (1998) Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells. Phys Rev B 58(20):13371–13374
Takeuchi T, Sota S, Katsuragawa M, Komori M, Takeuchi H, Amano H, Akasaki I (1997) Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells. Jpn J Appl Phys 2, 36(4A):L382–L385. doi:10.1143/Jjap.36.L382
Nishida T, Saito H, Kobayashi N (2001) Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN. Appl Phys Lett 79(6):711–712. doi:10.1063/1.1390485
Liu L, Edgar JH (2002) Substrates for gallium nitride epitaxy. Mater Sci Eng R 37(3):61–127. Pii S0927-796x(02)00008-6. doi:10.1016/S0927-796x(02)00008-6
Wierer JJ, David A, Megens MM (2009) III-nitride photonic-crystal light-emitting diodes with high extraction efficiency. Nat Photonics 3(3):163–169. doi:10.1038/Nphoton.2009.21
Fan SH, Villeneuve PR, Joannopoulos JD, Schubert EF (1997) High extraction efficiency of spontaneous emission from slabs of photonic crystals. Phys Rev Lett 78(17):3294–3297. doi:10.1103/PhysRevLett.78.3294
Kim HM, Cho YH, Lee H, Kim SI, Ryu SR, Kim DY, Kang TW, Chung KS (2004) High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays. Nano Lett 4(6):1059–1062. doi:10.1021/Nl049615a
Shapiro NA, Kim Y, Feick H, Weber ER, Perlin P, Yang JW, Akasaki I, Amano H (2000) Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain. Phys Rev B 62(24):R16318–R16321. doi:10.1103/PhysRevB.62.R16318
Ambacher O, Majewski J, Miskys C, Link A, Hermann M, Eickhoff M, Stutzmann M, Bernardini F, Fiorentini V, Tilak V, Schaff B, Eastman LF (2002) Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures. J Phys-Condens Matter 14(13):3399–3434. Pii S0953-8984(02)29173-0. doi:10.1088/0953-8984/14/13/302
Yablonovitch E (1987) Inhibited spontaneous emission in solid-state physics and electronics. Phys Rev Lett 58(20):2059–2062. doi:10.1103/PhysRevLett.58.2059
Eliseev PG, Smolyakov GA, Osinski M (1999) Ghost modes and resonant effects in AlGaN-InGaN-GaN lasers. IEEE J Sel Top Quantum 5(3):771–779. doi:10.1109/2944.788450
Boroditsky M, Krauss TF, Coccioli R, Vrijen R, Bhat R, Yablonovitch E (1999) Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals. Appl Phys Lett 75(8):1036–1038. doi:10.1063/1.124588
Jiang HX, Lin JY (2003) III-nitride quantum devices—microphotonics. Crit Rev Solid State 28(2):131–183. doi:10.1080/10408430390802440
Ma ZT, Ogusu K (2009) FDTD analysis of 2D triangular-lattice photonic crystals with arbitrary-shape inclusions based on unit cell transformation. Opt Commun 282(7):1322–1325. doi:10.1016/j.optcom.2008.12.055
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Li, K.H. (2016). III-Nitride Light-Emitting Diodes with Photonic Crystal Structures. In: Nanostructuring for Nitride Light-Emitting Diodes and Optical Cavities. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-48609-2_3
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