Advertisement

Fast Fabrication of Self-ordered Anodic Porous Alumina on Oriented Aluminum Grains

  • Chuan ChengEmail author
Chapter
First Online:
  • 579 Downloads
Part of the Springer Theses book series (Springer Theses)

Abstract

As mentioned in Chap. 1, under the conventional mild anodization (MA) condition, self-ordered anodic porous alumina is obtained only under certain narrow processing windows with specific values of the interpore distance (D int).

Keywords

Grain Orientation Anodization Voltage Porous Alumina Anodic Porous Alumina High Acid Concentration 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
This is a preview of subscription content, log in to check access.

References

  1. 1.
    H. Masuda, K. Fukuda, Science 268, 1466 (1995)CrossRefGoogle Scholar
  2. 2.
    H. Masuda, F. Hasegwa, S. Ono, J. Electrochem. Soc. 144, L127 (1997)CrossRefGoogle Scholar
  3. 3.
    K.H. Lee, C.C. Wong, J. Appl. Phys. 106, 104305 (2009)CrossRefGoogle Scholar
  4. 4.
    H. Masuda, K. Yada, A. Osada, Jpn. J. Appl. Phys. 37, L1340 (1998)CrossRefGoogle Scholar
  5. 5.
    K. Shwirn, W. Lee, R. Hillebrand, M. Steinhart, K. Nielsch, U. Gösele, ACS Nano 2, 302 (2008)CrossRefGoogle Scholar
  6. 6.
    W. Lee, R. Ji, U. Gösele, K. Nielsch, Nat. Mater. 5, 741 (2006)CrossRefGoogle Scholar
  7. 7.
    D. Losic, M. Lillo, D. Losic, Small 5, 1392 (2009)CrossRefGoogle Scholar
  8. 8.
    S.Z. Chu, K. Wada, S. Inoue, M. Isogai, A. Yasumori, Adv. Mater. 17, 2115 (2005)CrossRefGoogle Scholar
  9. 9.
    W. Lee, J.C. Kim, U. Gösele, Adv. Funct. Mater. 20, 21 (2010)CrossRefGoogle Scholar
  10. 10.
    D. Losic, D. Losic, Langmuir 25, 5426 (2009)CrossRefGoogle Scholar
  11. 11.
    J.E. Houser, K.R. Hebert, J. Electrochem. Soc. 153, B566 (2006)CrossRefGoogle Scholar
  12. 12.
    C. Cheng, A.H.W. Ngan, Electrochim. Acta 56, 9998 (2011)CrossRefGoogle Scholar
  13. 13.
    C. Cheng, A.H.W. Ngan, Nanotechnology 24, 215602 (2013)CrossRefGoogle Scholar
  14. 14.
    C.K.Y. Ng, A.H.W. Ngan, Chem. Mater. 23, 5264 (2011)CrossRefGoogle Scholar
  15. 15.
    K.Y. Ng, A.H.W. Ngan, Scripta Mater. 66, 439 (2012)CrossRefGoogle Scholar
  16. 16.
    K.Y. Ng, Y. Lin, A.H.W. Ngan, Acta Mater. 57, 2710 (2009)CrossRefGoogle Scholar
  17. 17.
    G. Beck, R. Bretzler, Mater. Chem. Phys. 128, 383 (2011)CrossRefGoogle Scholar
  18. 18.
    G. Beck, K. Retrikowski, Surf. Coat. Tech. 202, 5084 (2008)CrossRefGoogle Scholar
  19. 19.
    K.S. Napolskii, I.V. Roslyakov, A.Y. Romanchuk, O.O. Kapitanova, A.S. Mankevich, V.A. Lebedev, A.A. Eliseev, J. Mater. Chem. 22, 11922 (2012)CrossRefGoogle Scholar
  20. 20.
    S. Leonardi, A.L. Bassi, V. Russo, F.D. Fonzo, O. Paschos, T.M. Murray, H. Efstathiadis, J. Kunze, J. Phys. Chem. C 116, 384 (2012)CrossRefGoogle Scholar
  21. 21.
    R. Hillebrand, F. Muller, K. Schwirn, W. Lee, M. Steinhart, ACS Nano 2, 913 (2008)CrossRefGoogle Scholar
  22. 22.
    S. Mátéfi-Tempfli, M. Mátéfi-Tempfli, L. Piraux, Thin Solid Films 516, 3735 (2008)CrossRefGoogle Scholar
  23. 23.
    W. Rasband, ImageJ, release 1.44. NIH: USA (2011) (public domain, http://rsb.info.nih.gov/ij/)
  24. 24.
    J.W. Diggle, T.C. Downie, C.W. Goulding, Chem. Rev. 69, 365 (1969)CrossRefGoogle Scholar
  25. 25.
    G.C. Wood, in Oxide and Oxide Films, vol. 2, ed. by J.W. Diggle (Marcel Dekker, New York, 1973), p. 167Google Scholar
  26. 26.
    G.E. Thompson, G.C. Wood, in Treatise on Materials Science and Technology, vol. 23, ed. by J.C. Scully (Academic Press, New York, 1983), p. 205Google Scholar
  27. 27.
    M.M. Lohrengel, Mater. Sci. Eng. R 11, 243 (1993)CrossRefGoogle Scholar
  28. 28.
    H. Chik, J.M. Xu, Mater. Sci. Eng. R 43, 103 (2004)CrossRefGoogle Scholar
  29. 29.
    B. Lu, S. Bharathulwar, D.E. Laughlin, D.N. Lambeth, J. Appl. Phys. 87, 4721 (2000)CrossRefGoogle Scholar
  30. 30.
    J.P. O’Sullivan, G.C. Wood, Proc. Roy. Soc. Lond. A 317, 511 (1970)CrossRefGoogle Scholar
  31. 31.
    A.L. Friedman, L. Menon, J. Appl. Phys. 101, 084310 (2007)CrossRefGoogle Scholar
  32. 32.
    Y. Lei, W. Cai, G. Wilde, Prog. Mater. Sci. 52, 465 (2007)CrossRefGoogle Scholar
  33. 33.
    D. Losic, J.G. Shapter, J.G. Mitchell, N.H. Voelcker, Nanotechnology 16, 2275 (2005)CrossRefGoogle Scholar
  34. 34.
    T. Yanagishita, K. Nishio, H. Masuda, Adv. Mater. 17, 2241 (2005)CrossRefGoogle Scholar
  35. 35.
    W. Lee, R. Scholz, K. Nielsch, U. Gösele, Angew. Chem. 117, 6204 (2005)CrossRefGoogle Scholar
  36. 36.
    W. Lee, R. Ji, C.A. Ross, U. Gosele, K. Nielsch, Small 2, 978 (2006)CrossRefGoogle Scholar
  37. 37.
    K. Nielsch, J. Choi, K. Schwim, R.B. Wehrspohn, U. Gösele, Nano Lett. 2, 677 (2002)CrossRefGoogle Scholar
  38. 38.
    S. Ono, M. Saito, M. Ishiguro, H. Asoh, J. Electrochem. Soc. 151, B473 (2004)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2015

Authors and Affiliations

  1. 1.The University of Hong KongHong KongChina

Personalised recommendations

Cite chapter

Buy options