Abstract
A current reduction phenomenon was observed in back gate graphene-based field effect transistor. The drain current ID became smaller in next measurement even though the sweep range of the back gate bias VBG increased. We consider the reason for this phenomenon is that the contaminations produced during the device fabrication inevitably may serve as trap centers at the electrode-graphene interface, which would weaken the extent of p-type doping by trapping electrons when VBG is positive.
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Sun, H., Fang, L. (2015). Current Reduction Phenomenon in Graphene-Based Device. In: Xu, W., Xiao, L., Li, J., Zhang, C., Zhu, Z. (eds) Computer Engineering and Technology. NCCET 2014. Communications in Computer and Information Science, vol 491. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-45815-0_17
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DOI: https://doi.org/10.1007/978-3-662-45815-0_17
Publisher Name: Springer, Berlin, Heidelberg
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