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Ambipolar Polymer Field-Effect Transistors Based on Functionalized Isoindigo

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Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors

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Abstract

Ambipolar polymer FETs capable of both hole and electron transport exhibit simpler processing requirements in complementary-like circuits and potential application in organic light-emitting transistors. However, isoindigo-based polymers are usually p-type polymers with very low electron mobilities. In this chapter, electron-withdrawing groups are introduced on isoindigo to lower its LUMO level. High performance ambipolar FETs are demonstrated for both fluorinated and chlorinated isoindigo polymers.

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Authors and Affiliations

  1. Department of Chemical Engineering, Stanford University, Stanford, CA, USA

    Ting Lei

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  1. Ting Lei
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Correspondence to Ting Lei .

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Lei, T. (2015). Ambipolar Polymer Field-Effect Transistors Based on Functionalized Isoindigo. In: Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-45667-5_3

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