Abstract
Efficient charge transfer at semiconductor and electrode interface is one of the most crucial issues for the performance of any electronic device. A counter intuitive phenomenon of transfer improvement by insertion of a thin metal oxide film at the semiconductor and electrode interface has gained much attention recently. In this chapter, we will describe our understanding of the mechanism of performance improvement with such insertions based on our surface analytical investigations. We will start by introducing the measurement techniques utilized in our investigations. We will discuss results on the insertion of a thin layer of MoOx between indium tin oxide (ITO) and two well studied organic semiconductors, and demonstrate that the optimum insertion layer thickness is just a few nanometers. We will also illustrate the importance of high vacuum during the deposition of such insertion layers and the impact of exposure on device performance.
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References
J. Bardeen, W.H. Brattain, Phys. Rev. 74, 230 (1948)
S. M. Sze, Curr. Contents Eng. Technol. Appl. Sci 28 (1982)
J. Millman, Integrated Electronics (McGraw Hill, New Delhi, 1991)
Z. Kafafi, Organic Electroluminescence (CRC Taylor & Francis, Boca Raton, 2005)
G. Li, R. Zhu, Y. Yang, Nat. Photonics 6, 153 (2012)
S.R. Forrest, MRS Bull. 30, 28 (2005)
G.P. Crawford, Flexible Flat Panel Displays (Wiley, Hoboken, 2005)
Sony Website, www.sony.com/oledmonitors
Samsung Website, www.oled-info.com/samsung-oled
DOE Website, in solid state lighting
M. Pope, C.E. Swenberg, Annu. Rev. Phys. Chem. 35, 613 (1984)
C.W. Tang, S.A. Vanslyke, Appl. Phys. Lett. 51, 913 (1987)
C.W. Tang, S.A. Vanslyke, C.H. Chen, J. Appl. Phys. 65, 3610 (1989)
R.H. Friend et al., Nature 397, 121 (1999)
M.G. Helander, Z.B. Wang, J. Qiu, M.T. Greiner, D.P. Puzzo, Z.W. Liu, Z.H. Lu, Science 332, 944 (2011)
Z.B. Wang, M.G. Helander, J. Qiu, D.P. Puzzo, M.T. Greiner, Z.M. Hudson, S. Wang, Z.W. Liu, Z.H. Lu, Nat. Photonics 5, 753 (2011)
F. So, J. Kido, P. Burrows, MRS Bull. 33, 663 (2008)
C.W. Tang, Appl. Phys. Lett. 48, 183 (1986)
J.G. Xue, S. Uchida, B.P. Rand, S.R. Forrest, Appl. Phys. Lett. 84, 3013 (2004)
Y. Sun, G.C. Welch, W.L. Leong, C.J. Takacs, G.C. Bazan, A.J. Heeger, Nat. Mater. 11, 44 (2012)
G. Yu, J. Gao, J.C. Hummelen, F. Wudl, A.J. Heeger, Science 270, 1789 (1995)
N. Website, (2012) http://www.nrel.gov/ncpv/images/efficiency_chart.jpg
V.C. Sundar, J. Zaumseil, V. Podzorov, E. Menard, R.L. Willett, T. Someya, M.E. Gershenson, J.A. Rogers, Science 303, 1644 (2004)
G. Horowitz, J. Mater. Res. 19, 1946 (2004)
V. Podzorov, S.E. Sysoev, E. Loginova, V.M. Pudalov, M.E. Gershenson, Appl. Phys. Lett. 83, 3504 (2003)
V. Podzorov, V.M. Pudalov, M.E. Gershenson, Appl. Phys. Lett. 82, 1739 (2003)
C.R. Crowell, Surf. Sci. 13, 13 (1969)
E.M. Liston, L. Martinu, M.R. Wertheimer, J. Adhes. Sci. Technol. 7, 1091 (1993)
C. Sequin, E. Baldinge, Solid-State Electronics 13, 1527 (1970)
S. Tokito, K. Noda, Y. Taga, J. Phys. D-Appl. Phys. 29, 2750 (1996)
V. Shrotriya, G. Li, Y. Yao, C.W. Chu, Y. Yang, Applied Physics Letters 88, 073508 (2006)
M.D. Irwin, B. Buchholz, A.W. Hains, R.P.H. Chang, T.J. Marks, Proc. Natl. Acad. Sci. USA 105, 2783 (2008)
I. Irfan, W. Xia, H. Lin, H.J. Ding, C.W. Tang, Y.L. Gao, Thin Solid Films. 520:1988 (2012)
X.N. Li, D.W. Niles, F.S. Hasoon, R.J. Matson, P. Sheldon, J. Vac. Sci. Technol.a-Vac. Surf. Films 17, 805 (1999)
H. Lin, W. Irfan, HNWu Xia, Y. Gao, C.W. Tang, Sol. Energy Mater. Sol. Cells 99, 349 (2012)
W. Chen, S. Chen, H. Huang, D. C. Qi, X. Y. Gao, A. T. S. Wee, Appl. Phys. Lett. 92 (2008)
W. Chen, H. Huang, S. Chen, Y.L. Huang, X.Y. Gao, A.T.S. Wee, Chem. Mater. 20, 7017 (2008)
W. Chen, D.-C. Qi, H. Huang, X. Gao, A.T.S. Wee, Adv. Funct. Mater. 21, 410 (2011)
W. Chen, D. Qi, X. Gao, A.T.S. Wee, Prog. Surf. Sci. 84, 279 (2009)
Y.L. Gao, Mater. Sci. Eng. R-Rep. 68, 39 (2010)
H. Ishii, K. Sugiyama, E. Ito, K. Seki, Adv. Mater. 11, 605 (1999)
I. Irfan, H. Ding, Y. Gao, D. Y. Kim, J. Subbiah, F. So, Appl. Phys. Lett. 96 (2010)
Irfan, H. Ding, Y. Gao, C. Small, D. Y. Kim, J. Subbiah, and F. So, App. Phys. Lett. 96 (2010)
I. Irfan, H. Ding, F. So, Y. Gao, J. Photonics Energy 1, 011105 (2011)
I. Irfan, Y. Gao, J. Photonics Energy Accepted 2, 021213 (2012)
D. Y. Kim, J. Subbiah, G. Sarasqueta, F. So, H. Ding, Irfan, Y. Gao, Appl. Phys. Lett. 95 (2009)
A. Einstein, Ann. Phys. 17, 132 (1905)
H.Y. Fan, Phys. Rev. 68, 43 (1945)
F. Reinert, S. Hufner, New J. Phys. 7 (2005)
M.P. Seah, W.A. Dench, Surf. Interface Anal. 1, 2 (1979)
J.B. Peel, E.I. Vonnagyfelsobuki, J. Chem. Educ. 64, 463 (1987)
P.T. Andrews, I.R. Collins, Phys. Scr. T29, 116 (1989)
D.X. Dai, J.H. Hu, Z.J. Yang, Vacuum 41, 525 (1990)
F.J. Himpsel, Surf. Sci. Rep. 12, 1 (1990)
P.D. Johnson, S.L. Hulbert, Rev. Sci. Instrum. 61, 2277 (1990)
N.V. Smith, Rep. Prog. Phys. 51, 1227 (1988)
M. Kroeger, S. Hamwi, J. Meyer, T. Riedl, W. Kowalsky, A. Kahn, Appl. Phys. Lett. 95, 123301 (2009)
F. Wang, X. Qiao, T. Xiong, D. Ma, Org. Electron. 9, 985 (2008)
M. Kroger, S. Hamwi, J. Meyer, T. Riedl, W. Kowalsky, A. Kahn, Org. Electron. 10, 932 (2009)
D.Y. Kim, G. Sarasqueta, F. So, Sol. Energy Mater. Sol. Cells 93, 1452 (2009)
L. Cattin, et al., J. Appl. Phys. 105, 034507 (2009)
F. Cheng, G. Fang, X. Fan, N. Liu, N. Sun, P. Qin, Q. Zheng, J. Wan, X. Zhao, Sol. Energy Mater. Sol. Cells 95, 2914 (2011)
D.W. Zhao, S.T. Tan, L. Ke, P. Liu, A.K.K. Kyaw, X.W. Sun, G.Q. Lo, D.L. Kwong, Sol. Energy Mater. Sol. Cells 94, 985 (2010)
W. Zeng, K.S. Yong, Z.M. Kam, Z.-K. Chen, Y. Li, Synth. Met. 161, 2748 (2012)
T. Hori, T. Shibata, V. Kittichungchit, H. Moritou, J. Sakai, H. Kubo, A. Fujii, M. Ozaki, Thin Solid Films 518, 522 (2009)
J. Subbiah, C.M. Amb, I. Irfan, Y. Gao, J.R. Reynolds, F. So, ACS Appl Mater Interfaces 4, 866 (2012)
J. Subbiah, D. Y. Kim, M. Hartel, F. So, Applied Physics Letters 96, 063303 (2010)
Y. Nakayama, K. Morii, Y. Suzuki, H. Machida, S. Kera, N. Ueno, H. Kitagawa, Y. Noguchi, H. Ishii, Adv. Funct. Mater. 19, 3746 (2009)
M. Kroeger, S. Hamwi, J. Meyer, T. Riedl, W. Kowalsky, A. Kahn, Appl. Phys. Lett. 95, 123301 (2009)
Y. Kinoshita, R. Takenaka, and H. Murata, Applied Physics Letters 92, 123301 (2008)
F. Werfel, E. Minni, J. Phys. C-Solid State Phys. 16, 6091 (1983)
M. Sayer, A. Mansingh, J.B. Webb, J. Noad, J. Phys. C-Solid State Phys. 11, 315 (1978)
Y. Nakayama, K. Morii, Y. Suzuki, H. Machida, S. Kera, N. Ueno, H. Kitagawa, Y. Noguchi, H. Ishii, Adv. Funct. Mater. 19, 3746 (2009)
M. Zhang, Irfan, H. Ding, Y. Gao, and C. W. Tang, Appl. Phys. Lett. 96 (2010)
S. Yoon, Appl. Phys. Lett. 92, 143504 (2008)
V. Maria, Appl. Phys. Lett. 98, 123301 (2010)
J. Meyer, A. Shu, M. Kroeger, A. Kahn, Appl. Phys. Lett. 96 (2010)
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The authors would like to acknowledge the support of the National Science Foundation Grant no. DMR-1006098.
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Irfan, I., Gao, Y. (2015). Improvement of Charge Transfer Between Electrode and Semiconductor by Thin Metal Oxide Insertion. In: Yang, Y., Li, G. (eds) Progress in High-Efficient Solution Process Organic Photovoltaic Devices. Topics in Applied Physics, vol 130. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-45509-8_3
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