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X-Ray Absorption Spectroscopy of Semiconductors pp 145–163Cite as

Amorphous Group IV Semiconductors

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Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 190))

Abstract

The amorphous Group IV semiconductors are of technological significance and scientific importance. As an example of the former, amorphous Si has widespread use in thin-film transistors while, as an example of the latter, structural determinations of amorphous Ge are invaluable in assessing the validity of Continuous Random Network models. The application of XAS to the study of the elemental and binary amorphous Group IV semiconductors is now described and we demonstrate XAS is an ideal technique to study the structural and vibrational properties of these materials. A commonality in amorphous phase structure is apparent including an increase in disorder and bondlength and a decrease in coordination number relative to the crystalline phase.

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Acknowledgments

The author gratefully acknowledges C.J. Glover, G.J. Foran and K.M. Yu for significant contributions, fruitful collaborations and memorable times at XAS beamlines around the world in our pursuit of the atomic-scale structure of the amorphous Group IV semiconductors. The author thanks the Australian Research Council, Australian Synchrotron Research Program and Australian Synchrotron for financial support. Sample fabrication was enabled through access to the ACT Node of the Australian National Fabrication Facility.

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Authors and Affiliations

  1. Department of Electronic Materials Engineering, Australian National University, Canberra, ACT, 0200, Australia

    Mark C. Ridgway

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  1. Mark C. Ridgway
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Correspondence to Mark C. Ridgway .

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Editors and Affiliations

  1. Friedrich-Schiller-University Jena Institute of Solid State Physics, Jena, Germany

    Claudia S. Schnohr

  2. Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia

    Mark C. Ridgway

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Ridgway, M.C. (2015). Amorphous Group IV Semiconductors. In: Schnohr, C., Ridgway, M. (eds) X-Ray Absorption Spectroscopy of Semiconductors. Springer Series in Optical Sciences, vol 190. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-44362-0_7

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  • DOI: https://doi.org/10.1007/978-3-662-44362-0_7

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