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X-Ray Absorption Spectroscopy of Semiconductors pp 203–222Cite as

Group IV Quantum Dots and Nanoparticles

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Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 190))

Abstract

This chapter describes the application of X-ray absorption spectroscopy to group IV—predominantly Germanium—nanostructures. It starts with the description of importance of Ge nanostructures and the experimental methods to study them. This is followed by the results, obtained for Ge quantum dots such as embedded Ge nanoparticles and Ge quantum dots epitaxially grown on Si substrates, by using conventional X-ray absorption spectroscopy as well as more sophisticated approaches such as diffraction anomalous fine structure (DAFS). The chapter is concluded by a description of potential future applications of X-ray spectroscopy, e.g. for pure isotope studies, femtometer-precision X-ray absorption fine structure (XAFS), and time-resolved studies.

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Authors and Affiliations

  1. Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8562, Japan

    Alexander V. Kolobov

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  1. Alexander V. Kolobov
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Correspondence to Alexander V. Kolobov .

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Editors and Affiliations

  1. Friedrich-Schiller-University Jena Institute of Solid State Physics, Jena, Germany

    Claudia S. Schnohr

  2. Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia

    Mark C. Ridgway

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Kolobov, A.V. (2015). Group IV Quantum Dots and Nanoparticles. In: Schnohr, C., Ridgway, M. (eds) X-Ray Absorption Spectroscopy of Semiconductors. Springer Series in Optical Sciences, vol 190. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-44362-0_10

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  • DOI: https://doi.org/10.1007/978-3-662-44362-0_10

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