Diffusion of Phosphorus into Silicon and the Masking Action of Silicon-Dioxide Films

Abstract

A neutron-activation analysis was used to study the behaviour of phosphorus during its diffusion into silicon and silicon-dioxide films. Certain correlations were found between the compositions of the oxide layers formed during the diffusions and the existing phase diagram of the system SiO2-P2O5. In several experiments the concentration of phosphorus in silicon had reached the solubility limit, and a layer with very high phosphorus content was found to be present between the oxide film and the silicon substrate.

Keywords

Quartz Phosphorus Furnace Eter Verse 

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© Springer-Verlag Berlin Heidelberg 1967

Authors and Affiliations

  • E. Kooi

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