Diffusion of Phosphorus into Silicon and the Masking Action of Silicon-Dioxide Films


A neutron-activation analysis was used to study the behaviour of phosphorus during its diffusion into silicon and silicon-dioxide films. Certain correlations were found between the compositions of the oxide layers formed during the diffusions and the existing phase diagram of the system SiO2-P2O5. In several experiments the concentration of phosphorus in silicon had reached the solubility limit, and a layer with very high phosphorus content was found to be present between the oxide film and the silicon substrate.


Oxide Layer Oxide Film Phosphate Glass Si02 Layer Si02 Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 3-1).
    V. K. Subashiev, A. P. Landsman and A. A. Kukharskii, Sov. Phys. solid State 2, 2406–2411, 1961.Google Scholar
  2. 3-2).
    E. Tannenbaum, Solid State Electronics 2, 123–231, 1961.CrossRefGoogle Scholar
  3. 3-3).
    S. Maekawa, J. phys. Soc. Japan 17, 1592–1597, 1962.CrossRefGoogle Scholar
  4. 3-4).
    C. T. Sah, H. Sello and D. A. Tremere, J. Phys. Chem. Solids 11, 288–298, 1959.CrossRefGoogle Scholar
  5. 3-5).
    R. B. Allen, H. Bernstein and A. D. Kurtz, J. appl. Phys. 31, 334–337, 1960.CrossRefGoogle Scholar
  6. 3-6).
    T. Y. Tien and F. A. Hummel, J. Am. ceram. Soc. 45, 422–424, 1962.CrossRefGoogle Scholar
  7. 3-7).
    T. S. Elleman, J. E. Howes Jr and D. N. Sunderman, Int. J. appl. Rad. Isotopes 12, 142–152, 1961.CrossRefGoogle Scholar
  8. 3-8).
    B. Giessen and R. Vogel, Z. Metallkunde 5, 174–177, 1959.Google Scholar
  9. 3-9).
    N. K. Abrikosov, V. H. Glazov and L. Chên-Yiian, Russ. J. inorg. Chem. 7, 429–431, 1962.Google Scholar
  10. 3-10).
    F. A. Trumbore, Bell Sys. techn. J. 39, 205–233, 1960.CrossRefGoogle Scholar
  11. 3-11).
    M. M. Atalla, Properties of elemental and compound semiconductors (Met. Soc. Conf.), Interscience Publishers, New-York-London, 1959, Vol. 5, pp. 163–181.Google Scholar
  12. 3-12).
    A. Goetzberger and W. Shockley, J. appl. Phys. 31, 1821–1824, 1960.CrossRefGoogle Scholar
  13. 3-13).
    P. F. Schmidt and R. Stickler, J. electrochem. Soc. 111, 1188–1189, 1964.CrossRefGoogle Scholar
  14. 3-14).
    M. L. Joshi, J. electrochem. Soc. 113, 45–48, 1966.CrossRefGoogle Scholar
  15. 3-15).
    R. Gereth and G. H. Schwuttke, Appl. Phys. Letters 8, 55–57, 1966.CrossRefGoogle Scholar
  16. 3-16).
    E. H. Snow and B. E. Deal, J. electrochem. Soc. 113, 263–269, 1966.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1967

Authors and Affiliations

  • E. Kooi

There are no affiliations available

Personalised recommendations