Abstract
The chemical adhesion of poly(amic acid-imide), PAI, films upon silicon, silicon nitride, silicon dioxide and aluminum substrates was examined as a function of surface modification by γ-aminopropyltriethoxysilane, (γ-APS). In these systems it has been observed that curves describing the kinetics of PAI dissolution provide a useful means of discriminating differences in the solvent resistance of the PAI-substrate interphase, A ranking of the chemical adhesive interaction of PAI films on Y-APS modified substrates has been shown to go as AlxNy<Si<SiO2. This substrate effect has been shown to act in concert with an effect arising from the thickness of applied γ-APS layers. These two effects have been discussed in terms of coherence of the PAI-γ-APS-substrate interphase, short range γ-APS-substrate interactions, and the acid-base character of the substrate.
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Belton, D.J., Joshi, A. (1985). The Effect of γ-Aps Substrate Modification Upon the Chemical Adhesion of Poly(Amic Acid-Imide) Films. In: Ishida, H., Kumar, G. (eds) Molecular Characterization of Composite Interfaces. Polymer Science and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-29084-2_12
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DOI: https://doi.org/10.1007/978-3-662-29084-2_12
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