Electronic Structure of Delta-Doped Quantum Well as a Function of Temperature
Modern semiconductor growth techniques have provided great possibilities to create thin doping layers with a thickness of a few atomic layers (δ doping). The localization of ionized dopants in a δ-doped layer creates a strong electric field, which in turn results in the energy band bending, and forms a δ-doped quantum well. Up to now, the effect of temperature on the electronic structure in these systems has not been studied. In principle there is a reason to neglect temperature effects when k B T is small compared to the relevant energies of the well. We question such issue.