Electronic Structure of Delta-Doped Quantum Well as a Function of Temperature

  • L. M. Gaggero-Sager
  • R. Pérez-Alvarez
Conference paper
Part of the Lecture Notes in Physics book series (LNP, volume 493)

Abstract

Modern semiconductor growth techniques have provided great possibilities to create thin doping layers with a thickness of a few atomic layers (δ doping). The localization of ionized dopants in a δ-doped layer creates a strong electric field, which in turn results in the energy band bending, and forms a δ-doped quantum well. Up to now, the effect of temperature on the electronic structure in these systems has not been studied. In principle there is a reason to neglect temperature effects when k B T is small compared to the relevant energies of the well. We question such issue.

References

  1. Gaggero-Sager L.M. and Pérez-Alvarez R. (1996): Phys. Stat. Sol.(B) 197, 105.ADSCrossRefGoogle Scholar
  2. Gaggero-Sager L.M. and Pérez-Alvarez R. (1997): to appear in Appl. Phys. Lett. 70.Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1997

Authors and Affiliations

  • L. M. Gaggero-Sager
    • 1
  • R. Pérez-Alvarez
    • 2
  1. 1.Departamento de Física de los MaterialesU. N. E. D.MadridEspaña
  2. 2.Facultad de FísicaUniversidad de La HabanaCiudad HabanaCuba

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