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Scanning Electron Microscopy pp 272–312Cite as

Electron-Beam-Induced Current, Cathodoluminescence and Special Techniques

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Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 45))

Abstract

Electron beams generate electron-hole pairs or minority carriers in semiconductors within a small volume. They are therefore excellent tools for measuring semiconductor-device parameters such as the diffusion length, the surface recombination velocity, the relaxation time, and the position and width of depletion layers by recording the charge-collection current or electron-beaminduced current in a depletion layer. Schottky barriers as well as diffused and ion-implanted p-n junctions can be studied. By modulating the CRT with the charge-collection current, images of depletion layers and of crystal defects, which influence the recombination of minority carriers, can be displayed.

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  1. Physikalisches Institut, Westfätlische Wilhelms-Univeraität Münster, Domagkstraße 75, D-4400, Münster, Fed. Rep. of Germany

    Professor Dr. Ludwig Reimer

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© 1985 Springer-Verlag Berlin Heidelberg

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Reimer, L. (1985). Electron-Beam-Induced Current, Cathodoluminescence and Special Techniques. In: Scanning Electron Microscopy. Springer Series in Optical Sciences, vol 45. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-13562-4_7

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  • DOI: https://doi.org/10.1007/978-3-662-13562-4_7

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