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Heterostructure, Confined-Field Lasers

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Integrated Optics: Theory and Technology

Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 33))

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Abstract

In Chap. 11, it was demonstrated that confining the optical field to the region of the laser in which the inverted population exists results in a substantial reduction of threshold current density and a corresponding increase in efficiency. As early as 1963, it was proposed that heterojunctions could be used to produce a waveguiding structure with the desired property of optical confinement [12. 1, 2]. At about the same time, others proposed using a heterojunction laser structure not for optical field confinement, but to produce higher carrier injection efficiency at the p-n junction, and to confine the carriers to the junction region [12. 3, 4]. Actually, all three of these mechanisms are present in a heterostructure laser, and their combined effect result in a device that is vastly superior to the basic p-n homojunction laser.

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References

  1. G. Diemer, B. Böiger: Physica 29, 600 (1963)

    Article  Google Scholar 

  2. T. Pecany: Phys. Stat. Sol. 6, 651 (1964)

    Article  ADS  Google Scholar 

  3. H. Kroemer: Proc. IEE 51, 1782 (1963)

    Article  Google Scholar 

  4. Zh. I. Alferov: Sov. Phys. -Solid State 7, 1919 (1966)

    Google Scholar 

  5. I. Hayashi, M. B. Panish, P. Foy: IEEE J. QE-5, 211 (1969)

    Article  Google Scholar 

  6. H. Kressel, H. Nelson: RCA Rev. 30, 106 (1969)

    Google Scholar 

  7. Zh. I. Alferov, V. Andreev, E. Portnoi, M. Trukhan: Sov. Phys. — Semiconduct. 3, 1107 (1969)

    Google Scholar 

  8. K. Sheger, A. Milnes, D. Feught: Proc. Int. Conf. Chem. Semicond. Heterojunction Layer Structures, Budapest (Hung. Ac. Sci., Budapest 1970) Vol. 1, p. 73

    Google Scholar 

  9. Q. H. F. Vrehen: J. Phys. Chem. Solids 29, 129 (1968)

    Article  ADS  Google Scholar 

  10. H. Yonezu, I. Sakuma, Y. Nannich: Jpn. J. Appl. Phys. 9, 231 (1970)

    Article  ADS  Google Scholar 

  11. A. Yariv, R. C. C. Leite: Appl. Phys. Lett. 2, 173 (1963)

    Article  Google Scholar 

  12. H. C. Casey, Jr. M. B. Panish: Heterostructure Lasers, Part B, Materials and Operating Characteristics (Academic Press, New York 1978) pp. 109–132

    Google Scholar 

  13. A. McWhorter: Solid-State Electron. 6, 417 (1963)

    Article  ADS  Google Scholar 

  14. H. C. Casey, Jr. M. B. Danish: Heterostructure Lasers, Part A, Fundamental Principles (Academic Press, New York 1978) pp. 54–57

    Google Scholar 

  15. M. Ettenberg: Appl. Phys. Lett 27, 652 (1975)

    Article  ADS  Google Scholar 

  16. N. Chinone, R. Ito, O. Nakada: J. Appl. Phys. 47, 785 (1976)

    Article  ADS  Google Scholar 

  17. D. Greenaway, G. Harbeke: Optical Properties and Bandstructure of Semiconductors (Pergamon, Oxford 1968) p. 67

    Google Scholar 

  18. M. Horiguchi: Electron Lett 12, 310 (1976)

    Article  ADS  Google Scholar 

  19. D. N. Payne, W. A. Gambling: Electron Lett 11, 176 (1975)

    Article  Google Scholar 

  20. See, for example, R. D. Mauer: Proc. IEEE 61, 452 (1973)

    Article  Google Scholar 

  21. F. Blum, K. Lawley, W. Holton: J. Appl. Phys. 46, 2605 (1975)

    Article  ADS  Google Scholar 

  22. R. Nahory, M. Pollack: Appl. Phys. Lett. 27, 562 (1975)

    Article  ADS  Google Scholar 

  23. C. J. Neuse, G. H. Olsen: Appl. Phys. Lett. 26, 528 (1975)

    Article  ADS  Google Scholar 

  24. AP. Bogatov: Sov. J. Quant. Electron 4, 1281 (1975)

    Article  ADS  Google Scholar 

  25. R. E. Nahory, M. A. Pollack, J. K. Abrokwah: J. Appl. Phys. 48, 3988 (1977)

    Article  ADS  Google Scholar 

  26. H. Kressel (ed. ): Semiconductor Devices for Optical Communication, 2nd ed., Topics Appl. Phys., Vol. 39 (Springer, Berlin, Heidelberg, New York 1982)

    Google Scholar 

  27. C. J. Neuse, G. H. Olsen, M. Ettenberg, J. J. Gannon, T. J. Zamerowski: Appl. Phys. Lett. 29, 807 (1976)

    Article  ADS  Google Scholar 

  28. Y. Abe, K. Kishino, Y. Suematsu, S. Arai: Digest of Technical Papers, OSA/IEEE Topical Meeting on Integrated Optics, Asilomar, CA (5–8, January 1982) p. WB2

    Google Scholar 

  29. Z. L. Lian, J. N. Walpole: Digest of Technical Papers, OSA/IEEE Topical Meeting on Integrated Optics, Asilomar, CA (5–8, January 1982) p. WB3

    Google Scholar 

  30. J. C. Dyment: Appl. Phys. Lett. 10, 84 (1967)

    Article  ADS  Google Scholar 

  31. L. AD’Asaro: J. Lumin. 7, 310 (1973)

    Article  Google Scholar 

  32. H. Yonezu, I. Sakuma, K. Kobayashi, T. Kamejima, M. Ueno, Y. Nannicki: Jpn. J. Appl. Phys. 12, 1585(1973)

    Article  ADS  Google Scholar 

  33. T. Tsukada: J. Appl. Phys. 45, 4899 (1974)

    Article  ADS  Google Scholar 

  34. C. A. Brackett: J. Appl. Phys. 45, 2636 (1974)

    Article  ADS  Google Scholar 

  35. M. Nakamura: IEEE Trans. CAS-26, 1055 (1979)

    Google Scholar 

  36. N. Chinone: J. Appl. Phys. 48, 3237 (1977)

    Article  ADS  Google Scholar 

  37. K Seki, T. Kamiya, H. Yanai: Trans. IECE (Jpn. ) E-62, 73 (1979)

    Google Scholar 

  38. W. O. Schlosser: Bell Syst. Tech. J. 52, 887 (1973)

    Google Scholar 

  39. W. T. Tsang, R. A. Logan, M. Ilegems: Appl. Phys. Lett. 32, 311 (1978)

    Article  ADS  Google Scholar 

  40. T. Kobayashi, H. Kawaguchi, Y. Furukawa: Jpn. J. Appl. Phys. 16, 601 (1977)

    Article  ADS  Google Scholar 

  41. R. Namizaki: IEEE J. QE-11, 427 (1975)

    Article  Google Scholar 

  42. K. Aiki, M. Nakamura, T. Kuroda, J. Umeda: Appl. Phys. Lett. 48, 649 (1977)

    Article  ADS  Google Scholar 

  43. H. Yonezu: Jpn. J. Appl. Phys. 16, 209 (1977)

    Article  ADS  Google Scholar 

  44. D. Botez: Appl. Phys. Lett. 33, 872 (1978)

    Article  ADS  Google Scholar 

  45. CS. Hong, Y. Z. Liu, J. J. Coleman, P. D. Dapkus: Digest of Technical Papers, OSA/ IEEE Topical Meeting on Integrated Optics, Asilomar, CA (5–8, January 1982) p. FC2

    Google Scholar 

  46. C. E. Hurwitz, J. A. Rossi, J. J. Hsieh, C. M. Wolfe: Appl. Phys. Lett. 27, 241 (1975)

    Article  ADS  Google Scholar 

  47. M. Kawabe, H. Kotani, K. Masuda, S. Namba: Appl. Phys. Lett. 26, 46 (1975)

    Article  ADS  Google Scholar 

  48. R. Blauvelt, N. Bar-Chaim, D. Feteke, S. Margalit, A. Yariv: Digest of Technical Papers, OSA/IEEE Topical Meeting on Integrated Optics, Asilomar, CA (5–8, January 1982) p. FC 4

    Google Scholar 

  49. I.C. Aiki, M. Nakamura, J. Umeda: Appl. Phys. Lett. 29, 506 (1976)

    Article  ADS  Google Scholar 

  50. H. Kressel, H. F. Lockwood, F. Z. Hawrylo: J. Appl. Phys. 43, 561 (1972)

    Article  ADS  Google Scholar 

  51. H. Kressel, H. Mierop: J. Appl. Phys. 38, 5419 (1967)

    Article  ADS  Google Scholar 

  52. H. Kressel, I. Ladany: RCA Rev. 36, 230 (1975)

    ADS  Google Scholar 

  53. M. Ettenberg, H. S. Sommer, Jr. H. Kressel, H. F. Lockwood: Appl. Phys. Lett. 18, 571 (1971)

    Article  ADS  Google Scholar 

  54. P. Petroff, R. L. Hartman: Appl. Phys. Lett. 23, 469 (1973)

    Article  ADS  Google Scholar 

  55. J. R. Baird, G. E. Pittman, J. F. Leezer: Proc. 1966 Symposium on GaAs (Inst. of Physics, London 1967) p. 113

    Google Scholar 

  56. H. Yonezu, I. Sakuma, T. Kamejima, M. Ueno, K. Nishida, Y. Nannicki, I. Hayashi: Appl. Phys. Lett. 24, 18 (1974)

    Article  ADS  Google Scholar 

  57. R. Ito, H. Nakashima, S. Kishino, O. Nakada: IEEE J. QE-11, 551 (1975)

    Article  Google Scholar 

  58. B. C. DeLoach, B. W. Haki, R. L. Hartman, L. A. D’Asaro: Proc. IEEE 61, 1042 (1973)

    Article  Google Scholar 

  59. M. Ettenberg, H. Kressel, H. F. Lockwood: Appl. Phys. Lett. 25, 82 (1974)

    Article  ADS  Google Scholar 

  60. R. L. Hartman, N. E. Schumaker, R. W. Dixon: Appl. Phys. Lett. 31, 756 (1977)

    Article  ADS  Google Scholar 

  61. H. Kressel, M. Ettenberg, I. Ladany: Appl. Phys. Lett. 32, 305 (1978)

    Article  ADS  Google Scholar 

Supplementary Reading

  • Butler, J. K. (ed. ): Semiconductor Injection Lasers (IEEE Press, New York 1980)

    Google Scholar 

  • Casey, H. C. Jr., Panish, M. B.: Heterostructure Lasers (Academic Press, New York 1978)

    Google Scholar 

  • Kressel, H. (ed. ): Semiconductor Devices for Optical Communication, 2nd ed., Topics Appl. Phys., Vol. 39 (Springer-Verlag, Berlin, Heidelberg, New York 1982) Chap. 2

    Google Scholar 

  • Kressel, H., Butler, J. K.: Semiconductor Lasers and Heterojunction LEDs (Academic Press, New York 1977)

    Google Scholar 

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Authors and Affiliations

  1. Department of Electrical Engineering, University of Delaware, 122 Du Pont Hall, Newark, DE, 19711, USA

    Professor Robert G. Hunsperger Ph.D.

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  1. Professor Robert G. Hunsperger Ph.D.
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© 1982 Springer-Verlag Berlin Heidelberg

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Hunsperger, R.G. (1982). Heterostructure, Confined-Field Lasers. In: Integrated Optics: Theory and Technology. Springer Series in Optical Sciences, vol 33. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-13521-1_12

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  • DOI: https://doi.org/10.1007/978-3-662-13521-1_12

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-13523-5

  • Online ISBN: 978-3-662-13521-1

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