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Wafer Bonding pp 107-156 | Cite as

ELTRAN® Technology Based on Wafer Bonding and Porous Silicon

  • K. Sakaguchi
  • T. Yonehara
Part of the Springer Series in MATERIALS SCIENCE book series (SSMATERIALS, volume 75)

Abstract

Silicon-on-insulator (SOI) technology has entered a long-awaited period, with complementary metal oxide semiconductor (CMOS) applications of thin-film SOI about to reach a stage where they can be put to practical use. Thick-film SOI has already been put to practical use in a wide range of SOI-integrated circuit (IC) applications, such as analog devices, photodiode arrays, high-speed bipolar ICs, in-vehicle ICs and plasma display panel (PDP) drivers. Thin-film SOI, on the other hand, has previously found a few applications, such as radiation-hard static random access memories (SRAMs), application-specific ICs (ASICs) and asynchronous transfer mode (ATM) ICs. However, there are nowadays some applications in the area of mainstream CMOS-large-scale integration (LSI) towards devices for low power, high-speed logic and communications.

Keywords

Porous Silicon Epitaxial Layer Asynchronous Transfer Mode Inductively Couple Plasma Mass Spectroscopy Wafer Bond 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2004

Authors and Affiliations

  • K. Sakaguchi
  • T. Yonehara

There are no affiliations available

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