Advertisement

Silicon-on-insulator by the Smart Cut™ Process

  • G. K. Celler
  • A. J. Auberton-Hervé
  • B. Aspar
  • C. Lagahe-Blanchard
  • C. Maleville
Part of the Springer Series in MATERIALS SCIENCE book series (SSMATERIALS, volume 75)

Abstract

Wafer bonding was established in the 1980s as convenient and reliable means of producing multilayer structures consisting of crystalline and amorphous layers [1,2]. The science of wafer bonding was developed and the practice of getting two flat wafer surfaces to stick and bond has become quite successful. The one major weakness that remained was the difficulty of transforming one of the bonded wafers into a much thinner layer of uniform thickness.

Keywords

Silicon Wafer Layer Transfer Implantation Dose Wafer Bonding Fully Deplete 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Lasky JB (1986), Appl Phys Lett 48: 78ADSCrossRefGoogle Scholar
  2. 2.
    Tong Q-Y, Gösele U (1999) Semiconductor Wafer Bonding. Science and Technology, John Wiley & Sons, Inc., New YorkGoogle Scholar
  3. 3.
    Kaminsky M, Das SK, Fenske G (1975), Appl Phys Lett 27: 521ADSCrossRefGoogle Scholar
  4. 4.
    Ullmaier H (1997), MRS Bulletin 22 (4): 14Google Scholar
  5. 5.
    Anttila A, Hirvonen J, Hautala M (1980), Rad Eff Lett 57: 41Google Scholar
  6. 6.
    Bister M, Hirvonen J, Räisänen J, Anttila A (1982), Radiation Effects 59: 199CrossRefGoogle Scholar
  7. 7.
    Johnson NM, Ponce FA, Street RA, Nemanich RJ (1987), Phys Rev B 35: 4166ADSCrossRefGoogle Scholar
  8. 8.
    Cerofolini F, Meda L, Balboni R, Corni F, Frabboni S, Ottaviani G, Tonini R, Anderle M, Canteri R (1992), Phys Rev B 46: 2061–2070ADSCrossRefGoogle Scholar
  9. 9.
    Bruel M, US Patent 5,374,564 issued Dec 20, 1994Google Scholar
  10. 10.
    Bruel M (1995), Electronics Lett 31: 1201CrossRefGoogle Scholar
  11. 11.
    Aspar B, Moriceau H, Jalaguier E, Lagahe C, Soubie A, Biasse B, Papon A M, Claverie A, Grisolia J, Benassayag G, Letertre F, Rayssac O, Barge T, Maleville C, Ghyselen B (2001), J Electron Mater 30: 834ADSCrossRefGoogle Scholar
  12. 12.
    Auberton-Hervé AJ (1996) IEDM Tech Digest. IEEE, Piscataway, New York, p 3Google Scholar
  13. 13.
    Aspar B, Auberton-Hervé AJ (2002) Silicon Wafer Bonding Technology for VLSI and MEMS Applications. Iyer SS, Auberton-Hervé AJ (eds) INSPEC, London, p 35CrossRefGoogle Scholar
  14. 14.
    Celler GK and Cristoloveanu S (2003), J Appl Phys 93: 4955–78ADSCrossRefGoogle Scholar
  15. 15.
    Moriceau H, Maleville C, Cartier AM, Aspar B, Soubie A, Bruel M, Poumeyrol T, Metral F, Auberton-Hervé AJ, Proc 1996 IEEE Int SOI Conf, Sanibel Island, FL, p 152 ( IEEE, Piscataway, NJ 1996 )Google Scholar
  16. 16.
    Aspar B, Bruel M, Moriceau H, Maleville C, Poumeyrol T, Papon AM, Claverie A, Benassayag G, Auberton-Hervé AJ, and Barge T (1997), Microelectronic Engineering 36: 233CrossRefGoogle Scholar
  17. 17.
    Aspar B, Lagahe C, Moriceau H, Soubie A, Bruel M, Auberton-Hervé AJ, Barge T, Maleville C, Mat Res Soc Symp Proc, Vol 510, Symposium on Defects and Impurities in Semiconductors, p 381, (1998)Google Scholar
  18. 18.
    Grisolia J, Ben Assayag G, Claverie A, Aspar B, Lagahe C, Laanab L (2000), Appl Phys Lett 76: 852ADSCrossRefGoogle Scholar
  19. 19.
    Maleville C, Rayssac O, Moriceau H, Biasse B, Baroux L, Aspar B, Bruel M, Semiconductor Wafer Bonding, Science Technology and Applications IV, Electrocheml Soc Proc 97:46–55 ( Electrochem Soc, Pennington, NJ 1998 )Google Scholar
  20. 20.
    Pearton SJ, Corbett JW, Stavola M (1992) In: Hydrogen in Crystalline Semiconductors. Queiser H-J (ed) Springer Series in Materials Science 16, Springer VerlagGoogle Scholar
  21. 21.
    Weldon MK, Marsico VE, Chabal YJ, Agarwal A, Eaglesham DJ, Sapjeta J, Brown WL, Jacobson DC, Caudano Y, Christman SB, Chaban EE (1997), J Vac Sci Technol B 15: 1065Google Scholar
  22. 22.
    Holbech JD, Bech Nielsen B, Jones R, Sitch P, Oberg S (1993), Phys Rev Lett 71: 8758CrossRefGoogle Scholar
  23. 23.
    Estreicher SK (1995), Mater Sci Eng Rep 14: 314–412CrossRefGoogle Scholar
  24. 24.
    Freund LB (1997), Appl Phys Lett 70: 3519ADSCrossRefGoogle Scholar
  25. 25.
    Grisolia J, Ben Assayag G, de Mauduit B, Claverie A, Kroon RE, Neethling JH (2001) In: Mat Res Soc Symp Proc 681E, p I321Google Scholar
  26. 26.
    Van Wieringen A, Warmoltz N (1956), Physica 22: 849ADSCrossRefGoogle Scholar
  27. 27.
    Pearton SJ, Corbett JW, Borenstein JT (1991), Physica B 170: 85ADSCrossRefGoogle Scholar
  28. 28.
    Aspar B, Lagahe C, Moriceau H, Jalaguier E, Mas A, Rayssac O, Soubie A, Biasse B, Bruel M, Auberton-Hervé AJ, Barge T, Letertre F, Maleville C (1999) In: Hunt C, Baumgart H, Goesele U, Abe T (eds) Electrochem Soc Proc Vol 99–35 Pennington, New York, p 48Google Scholar
  29. 29.
    Chevalier J (1996), Defect and Diffusion Forum 131–132: 9–89CrossRefGoogle Scholar
  30. 30.
    Zheng Y, Lau SS, Höchbauer T, Misra A, Verda R, He X-M, Nastasi M, Mayer JW (2001), J Appl Phys 89: 2972Google Scholar
  31. 31.
    Agarwal A, Haynes TE, Venezia VC, Holland OW, and Eaglesham DJ (1998), Appl Phys Lett 72: 1086Google Scholar
  32. 32.
    Lagahe-Blanchard C, Sousbie N, Sartori S, Moriceau H, Soubie A, Aspar B, Nguyen P, Blondeau B (2003) The Electrochemical Soc Wafer Bonding Symposium, ParisGoogle Scholar
  33. 33.
    Marwick AD, Oehrlein GS, Wittmer M (1991), Appl Phys Lett 59: 198ADSCrossRefGoogle Scholar
  34. 34.
    Borenstein JT, Corbett JW, Pearton SJ (1993), J Appl Phys 73: 2751Google Scholar
  35. 35.
    Tong Q-Y, Scholz R, Gösele U, Lee TH, Huang L-J, Chao Y-L, Tan TY (1998), Appl Phys Lett 72: 49ADSCrossRefGoogle Scholar
  36. 36.
    Henley FJ, Cheung NW, US Patent 6,033,974, issued March 7, 2000Google Scholar
  37. 37.
    Welser J, Hoyt JL, Gibbons JF (1994), IEEE Electron Device Lett 15: 100ADSCrossRefGoogle Scholar
  38. 38.
    Cheng Z, Currie MT, Leitz CW, Taraschi G, Lee ML, Pitera A, Hoyt JL, Antoniadis DA, Fitzgerald EA (2002), Mat Res Soc Symp Proc vol 686, p Al5Google Scholar
  39. 39.
    Langdo TA, Lochtefeld A, Currie MT, Hammond R, Yang VK, Carlin JA, Vineis CJ, Braithwaite G, Badawi H, Bulsara MT, Fitzgerald EA (2002) IEEE Int SOI Conference, Piscataway, Williamsburg, New York, p 211CrossRefGoogle Scholar
  40. 40.
    Auberton-Hervé AJ, Maleville C (2002) IEEE Int SOI Conf, Williamsburg, VA, p 1CrossRefGoogle Scholar
  41. 41.
    Ghyselen B, Aulnette C, Osternaud B, Akatsu T, Mazure C, Lagahe-Blanchard C, Po-cas S, Hartmann J-M, Leduc P, Ernst T, Moriceau H, Campidelli Y, Kermarrec O, Besson P, Morand Y, Rivoire M, Bensahel D, Paillard V (2003) In: ICSi3—The SiGe Conference. Santa Fe, New Mexico, 2003, pp 170Google Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2004

Authors and Affiliations

  • G. K. Celler
  • A. J. Auberton-Hervé
  • B. Aspar
  • C. Lagahe-Blanchard
  • C. Maleville

There are no affiliations available

Personalised recommendations