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Preparation and Properties of Nanocrystalline Silicon

  • Michio Kondo
  • Akihisa Matsuda
Part of the Springer Series in Photonics book series (PHOTONICS, volume 13)

Abstract

The potential application of nanocrystal silicon much smaller than the carrier diffusion length of crystalline silicon to high-efficiency solar cells with over 10% efficiency has been unveiled. The advantage of nanocrystalline silicon over conventional polycrystalline silicon arises from the hydrogen passivation of electrically active defects, as well as contaminants, thanks to the low temperature fabrication process under a hydrogen atmosphere. The carrier recombination at the grain boundaries is significantly reduced by the hydrogen passivation and thereby an open-circuit voltage as high as 550 mV can be obtained for nanocrystalline silicon 10 nm in diameter.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2004

Authors and Affiliations

  • Michio Kondo
  • Akihisa Matsuda

There are no affiliations available

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