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Preparation and Properties of Nanocrystalline Silicon

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Thin-Film Solar Cells

Part of the book series: Springer Series in Photonics ((PHOTONICS,volume 13))

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Abstract

The potential application of nanocrystal silicon much smaller than the carrier diffusion length of crystalline silicon to high-efficiency solar cells with over 10% efficiency has been unveiled. The advantage of nanocrystalline silicon over conventional polycrystalline silicon arises from the hydrogen passivation of electrically active defects, as well as contaminants, thanks to the low temperature fabrication process under a hydrogen atmosphere. The carrier recombination at the grain boundaries is significantly reduced by the hydrogen passivation and thereby an open-circuit voltage as high as 550 mV can be obtained for nanocrystalline silicon 10 nm in diameter.

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Authors
  1. Michio Kondo
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  2. Akihisa Matsuda
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Editors and Affiliations

  1. Department of Photonics, Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, 525-8577, Kusatsu Shiga, Japan

    Yoshihiro Hamakawa

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Kondo, M., Matsuda, A. (2004). Preparation and Properties of Nanocrystalline Silicon. In: Hamakawa, Y. (eds) Thin-Film Solar Cells. Springer Series in Photonics, vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-10549-8_4

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  • DOI: https://doi.org/10.1007/978-3-662-10549-8_4

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-07879-8

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