SiGe Photodetectors

  • Horst Zimmermann
Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 13)


SiGe alloys allow the integration of infrared detectors on Si. The addition of Ge to Si also increases the absorption coefficient in the spectral range from 400–1000 nm, allows a reduction of the detector thickness, and, therefore, enables faster detectors than with pure Si. To exploit the advantages of SiGe alloys for Si-based photodetectors, however, the problem associated with the lattice constant mismatch has to be understood. Subsequently, this chapter describes an example of a SiGe OEIC.


Molecular Beam Epitaxy Critical Thickness Heterojunction Bipolar Transistor Thread Dislocation Density SiGe Alloy 
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Copyright information

© Springer-Verlag Berlin Heidelberg 2004

Authors and Affiliations

  • Horst Zimmermann
    • 1
  1. 1.Institut für Elektrische Mess- und SchaltungstechnikTechnische Universität WienWienAustria

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