SiGe alloys allow the integration of infrared detectors on Si. The addition of Ge to Si also increases the absorption coefficient in the spectral range from 400–1000 nm, allows a reduction of the detector thickness, and, therefore, enables faster detectors than with pure Si. To exploit the advantages of SiGe alloys for Si-based photodetectors, however, the problem associated with the lattice constant mismatch has to be understood. Subsequently, this chapter describes an example of a SiGe OEIC.
KeywordsMolecular Beam Epitaxy Critical Thickness Heterojunction Bipolar Transistor Thread Dislocation Density SiGe Alloy
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