Abstract
Semiconductor substrates or devices are encapsulated with high temperature-resistant silicon nitride films to protect them against damage caused by high-temperature processes. These include diffusion, electrical activation of implanted dopants, and annealing of radiation damage caused by ion implantation. Silicon nitride encapsulation prevents the decomposition of a semiconductor substrate and the diffusion or evaporation of species at elevated process temperatures. The major application of silicon nitride films as an encapsulant involves compound semiconductors and, to a minor extent, element semiconductors.
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References
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Krimmel, E.F., Hezel, R., Nohl, U., Bohrer, R. (1991). Silicon Nitride in Encapsulation and Recrystallization. In: Pebler, A., Schröder, F. (eds) Si Silicon. Si. Silicium. Silicon (System-Nr. 15), vol S-i / B / 1-5 / 5 / c. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09901-8_7
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