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Si Silicon pp 287-297 | Cite as

Silicon Nitride in Epitaxy and Superlattices

  • Eberhard F. Krimmel
  • Rudolf Hezel
  • Uwe Nohl
  • Rainer Bohrer
Chapter
Part of the Si. Silicium. Silicon (System-Nr. 15) book series (GMELIN, volume S-i / B / 1-5 / 5 / c)

Abstract

Patterned or unpatterned silicon nitride films are used as masks in structured or unstructured, epitaxial or amorphous growth of semiconductor layers on single-crystal or amorphous substrates. The silicon nitride mask is stable compared to the conventionally used silicon oxide mask. Amorphous silicon nitride films are a constituent element of superlattice structures which are base materials for novel devices.

Keywords

Silicon Nitride Vapor Phase Epitaxy Resonant Tunneling Superlattice Structure Silicon Nitride Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1991

Authors and Affiliations

  • Eberhard F. Krimmel
    • 1
  • Rudolf Hezel
    • 2
  • Uwe Nohl
    • 3
  • Rainer Bohrer
    • 3
  1. 1.Universität Frankfurt/MainGermany
  2. 2.Universität ErlangenNürnbergGermany
  3. 3.Gmelin InstituteFrankfurt/MainGermany

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