Abstract
Silicon nitride is applied in monolithic, integrated, digital, and analog circuits composed of FETs, diodes, resistors, and thin-film capacitors on compound semiconductor substrates. Silicon nitride can be used as a mask for implanting Si to produce n-type layers and for implanting hydrogen to achieve isolation by generating radiation damage. It can also be used for encapsulating before annealing, providing recessed Mo-Au gates, and for passivation [1,2]. ICs on GaAs with a high degree of integration are fabricated by the same technique by preparing patterned multilayers consisting of a silicon nitride layer sandwiched with a silicon oxide and a PSG layer prior to annealing and preparing contacts and gate contacts [3]. Highspeed, ion-implanted GaAs ICs are annealed using a silicon nitride oxide layer for encapsulation. The silicon nitride oxide layer is deposited in a mixture of SiH4, NH3, and 02 at 923 K. The subsequent annealing is performed at 1073 K [4]. Alternatively, GaAs specimens are coated with a silicon nitride oxide layer, patterned, implanted with silicon ions, encapsulated with a silicon nitride layer, and annealed to prepare high-speed GaAs ICs [5].
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Van Tuyl, R. L; Kumar, V.; D’Avanzo, D. C; Taylor, T. W.; Peterson, V. E.; Hornbuckle, D. P.; Fisher, R. A.; Estreich, D. B. (IEEE Trans. Microwave Theory Tech. MTT-30 [1982] 935/42; C.A. 98 [1983] No. 82083).
Van Tuyl, R. L; Kumar, V.; D’Avanzo, D. C; Taylor, T. W.; Peterson, V. E.; Hornbuckle, D. P.; Fisher, R. A.; Estreich, D. B. (IEEE Trans. Electron Devices ED-29 [1982] 1031/8; C.A. 98 [1983] No. 99527).
Hitachi Ltd. (Japan. Kokai Tokkyo Koho 60–53086 [1985] from C.A. 103 [1985] No. 133395).
NEC Corp. (Japan. Kokai Tokkyo Koho 60–39825 [1985] from C.A. 103 [1985] No. 80530).
NEC Corp. (Japan. Kokai Tokkyo Koho 60–39826 [1985] from C.A. 103 [1985] No. 80531).
Odekirk, B.; Sheets, J. (Proc. Electrochem. Soc. 86–3 [1986] 274/86; C.A. 104 [1986] No. 140224).
Mitsubishi Electric Corp. (Japan. Kokai Tokkyo Koho 59–167028 [1983/84] from C.A. 102 [1985] No. 104588).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1991 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Krimmel, E.F., Hezel, R., Nohl, U., Bohrer, R. (1991). Silicon Nitride in Compound Semiconductor Integrated Circuits (ICs). In: Pebler, A., Schröder, F. (eds) Si Silicon. Si. Silicium. Silicon (System-Nr. 15), vol S-i / B / 1-5 / 5 / c. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09901-8_25
Download citation
DOI: https://doi.org/10.1007/978-3-662-09901-8_25
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-662-09903-2
Online ISBN: 978-3-662-09901-8
eBook Packages: Springer Book Archive