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Si Silicon pp 243-245 | Cite as

Silicon Nitride in Random Access Memories (RAMs)

  • Eberhard F. Krimmel
  • Rudolf Hezel
  • Uwe Nohl
  • Rainer Bohrer
Chapter
Part of the Si. Silicium. Silicon (System-Nr. 15) book series (GMELIN, volume S-i / B / 1-5 / 5 / c)

Abstract

Random access memories (RAMs) are memories where information can be written in during operation and, vice versa, information can be read out. The conventional static memory cell (SRAM) consists of two inverters and six transistors designed in NMOS or CMOS technology. Dynamic RAM (DRAM) cells contain only a single transistor.

Keywords

Silicon Nitride Random Access Memory Silicon Oxide Layer Storage Capacitor Capacitor Cell 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1991

Authors and Affiliations

  • Eberhard F. Krimmel
    • 1
  • Rudolf Hezel
    • 2
  • Uwe Nohl
    • 3
  • Rainer Bohrer
    • 3
  1. 1.Universität Frankfurt/MainGermany
  2. 2.Universität ErlangenNürnbergGermany
  3. 3.Gmelin InstituteFrankfurt/MainGermany

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