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Si Silicon pp 239-242 | Cite as

Silicon Nitride in Bipolar Device-Based Integrated Circuits

  • Eberhard F. Krimmel
  • Rudolf Hezel
  • Uwe Nohl
  • Rainer Bohrer
Chapter
Part of the Si. Silicium. Silicon (System-Nr. 15) book series (GMELIN, volume S-i / B / 1-5 / 5 / c)

Abstract

Integrated circuits (ICs) based on bipolar devices may be faster than ICs based on field effect devices. However, bipolar circuits exhibit some restrictions in obtaining high integration densities due to isolation problems, parasitic capacitances, and high power consumption. Inactive regions are much larger than the active ones.

Keywords

Silicon Nitride Silicon Oxide Layer Silicon Nitride Layer High Integration Density Deposit Silicon Nitride 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    Hitachi Ltd. (Japan. Kokai Tokkyo Koho 60/9161 [1985] from C.A. 103 [1985] No. 31203).Google Scholar
  2. [2]
    Komatsu, S.; Koyanagi, T.; Ito, T. (Toshiba Rev. Intern. Ed. No. 143 [1983] 36/40; C.A. 99 [1983] No. 97281).Google Scholar
  3. [3]
    Matsushita Electric Works, Ltd. (Japan. Kokai Tokkyo Koho 59/4127 [1982/84] from C.A.100 [1984] No. 201910).Google Scholar
  4. [4]
    Sony Corp. (Japan. Kokai Tokkyo Koho 59/217364 [1983/84] from C.A. 102 [1985] No. 213785).Google Scholar
  5. [5]
    Toshiba Corp. (Japan. Kokai Tokkyo Koho 59/25270 [1982/84] from C.A. 101 [1984] No. 31955).Google Scholar
  6. [6]
    Hitachi Ltd. (Japan. Kokai Tokkyo Koho 58/142539 [1982/83] from C.A. 99 [1983] No. 223540).Google Scholar
  7. [7]
    Fujitsu Ltd. (Japan. Kokai Tokkyo Koho 58/202570 [1982/83] from C.A. 100 [1984] No. 149535).Google Scholar
  8. [8]
    Hitachi Ltd. (Japan. Kokai Tokkyo Koho 59/217362 [1983/84] from C.A. 102 [1985] No. 213784).Google Scholar
  9. [9]
    Toshiba Corp. (Japan. Kokai Tokkyo Koho 59/54222 [1982/84] from C.A. 101 [1984] No. 82631).Google Scholar
  10. [10]
    Fujitsu Ltd. (Japan. Kokai Tokkyo Koho 59/63762 [1982/84] from C.A. 101 [1984] No. 121484).Google Scholar
  11. [11]
    Toshiba Corp. (Japan. Kokai Tokkyo Koho 59/104134 [1982/84] from C.A. 101 [1984] No. 202647).Google Scholar
  12. [12]
    Okada, K.; Aomura, K.; Nakamura, T.; Shiba, H. (IEEE J. Solid-State Circuits SC-14 [1979] 307/11; C.A. 91 [1979] No. 31 540).Google Scholar
  13. [13]
    N. V. Philips’ Gloeilampenfabrieken (Brit. 1580657 [1976/80]; C.A. 94 [1981] No. 166495).Google Scholar
  14. [14]
    Toshiba Corp. (Japan. Kokai Tokkyo Koho 59/124141 [1982/84] from C.A. 101 [1984] No. 238955).Google Scholar
  15. [15]
    Fujitsu Ltd. (Japan. Kokai Tokkyo Koho 59/188139 [1983/84] from C.A. 102 [1985] No. 159047).Google Scholar
  16. [16]
    Mitsubishi Electric Corp. (Japan. Kokai Tokkyo Koho 59/112655 [1982/84] from C.A. 101 [1984] No. 220930).Google Scholar
  17. [17]
    Eguchi, K. (Japan. Kokai Tokkyo Koho 61/154142 [1986] from C.A. 106 [1987] No. 26562).Google Scholar
  18. [18]
    Matsushita Electronics Corp. (Japan. Kokai Tokkyo Koho 60/95967 [1985] from C.A. 104 [1986] No. 44425).Google Scholar
  19. [19]
    NECCorp.(Japan.KokaiTokkyoKoho59/94867[1982/84]fromCA.101 [1984]No. 182225).Google Scholar
  20. [20]
    Nippon Electric Co., Ltd. (Japan. Kokai Tokkyo Koho 58/159347 [1982/83] from C.A. 100 [1984] No. 44039).Google Scholar
  21. [21]
    Hitachi Ltd. (Japan. Kokai Tokkyo Koho 59/191349 [1983/84] from C.A. 102 [1985] No. 196403).Google Scholar
  22. [22]
    N. V. Philips’ Gloeilampenfabrieken (Belg. 826722 [1974/75]; C.A. 85 [1976] No. 71346).Google Scholar
  23. [23]
    Toshiba Corp. (Japan. Kokai Tokkyo Koho 59/112633 [1982/84] from C.A. 101 [1984] No. 220918).Google Scholar
  24. [24]
    Fujitsu Ltd. (Japan. Kokai Tokkyo Koho 59/2345 [1982/84] from C.A. 100 [1984] No. 201894).Google Scholar
  25. [25]
    Fujitsu Ltd. (Japan. Kokai Tokkyo Koho 59/56741 [1982/84] from C.A. 101 [1984] No. 102447).Google Scholar
  26. [26]
    Fujitsu Ltd. (Japan. Kokai Tokkyo Koho 59/57468 [1982/84] from C.A. 101 [1984] No. 121479).Google Scholar
  27. [27]
    Fujitsu Ltd. (Japan. Kokai Tokkyo Koho 60/10748 [1985] from C.A. 103 [1985] No. 31209).Google Scholar
  28. [28]
    Venkataraman, K.; Yun, B. H. (U.S. 4274909 [1980/81]; C.A. 95 [1981] No. 72114).Google Scholar
  29. [29]
    Hitachi Ltd.; Hitachi Microcomputer Engineering Ltd. (Japan. Kokai Tokkyo Koho 60/34034 [1985] from C.A. 103 [1985] No. 80522).Google Scholar
  30. [30]
    Ogura, S.; Riseman, J.; Rovedo, N.;Shepard, J. F.(Eur. Appl. 144762 [1985]; C.A. 103 [1985] No. 133512).Google Scholar
  31. [31]
    NEC Corp. (Japan. Kokai Tokkyo Koho 59/106142 [1982/84] from C.A. 101 [1984] No. 220906).Google Scholar
  32. [32]
    Toshiba Corp. (Japan. Kokai Tokkyo Koho 60/10644 [1985] from C.A. 103 [1985] No. 31191).Google Scholar
  33. [33]
    Hitachi Ltd. (Japan. Kokai Tokkyo Koho 59/188172 [1983/84] from C.A. 102 [1985] No. 158985).Google Scholar
  34. [34]
    Schaber, H. C (Ger. Offen. 3317711 [1983/84]; C.A. 102 [1985] No. 54723).Google Scholar
  35. [35]
    Ryden, W. D.; Labuda, E. F. (IEEE J. Solid-State Circuits SC-12 [1977] 376/382; C.A. 87 [1977] No. 110406).Google Scholar
  36. [36]
    Summers, D. (Solid State Technol. 26 [1983] 137/41; C.A. 100 [1984] No. 43646).Google Scholar
  37. [37]
    Eggers, H.; Fritzsche, H.;Glasl, A. (Proc. 2nd Intern. IEEE VLSI Multilevel Interconnect. Conf., Santa Clara, Calif., 1985, pp. 163/9; C.A. 104 [1986] No. 120813).Google Scholar
  38. [38]
    Eggers, H.; Glasl, A.; Fritzsche, H. (Siemens Forsch. Entwicklungsber. 15 [1986] 64/7; C.A. 104 [1986] No. 235175).Google Scholar
  39. [39]
    Hitachi Ltd.; Nippon Telegraph and Telephone Public Corp. (Japan. Kokai Tokkyo Koho 57/58352 [1980/82] from C.A. 97 [1982] No. 65036).Google Scholar
  40. [40]
    Fairchild Camera and Instrument Corp. (Japan. Kokai Tokkyo Koho 55/25505 [1976/80] from CA. 93 [1980] No. 248992).Google Scholar
  41. [41]
    NEC Corp. (Japan. Kokai Tokkyo Koho 59/138369 [1983/84] from C.A. 102 [1985] No. 54753).Google Scholar
  42. [42]
    Yamamoto, Y.; Sakuma, K. (IEEE Trans. Electron Devices 35 [1988] 1601/8; C.A. 109 [1988] No. 241921).Google Scholar
  43. [43]
    Sakai, T.; Yamamoto, Y.; Kobayashi, Y.; Yamauti, H.; Ishitani, T.; Sudo, T. (IEEEJ. Solid-State Circuits SC-14 [1979] 301/7; C.A. 91 [1979] No. 31539).Google Scholar
  44. [44]
    Koga, T.; Tanaka, S.; Tanabe, M.; Komatsu, S.; Aoyama, M.; Wada, Y. (IEEE Transactions Consumer Electronics CE-28 [1982] 527/35).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1991

Authors and Affiliations

  • Eberhard F. Krimmel
    • 1
  • Rudolf Hezel
    • 2
  • Uwe Nohl
    • 3
  • Rainer Bohrer
    • 3
  1. 1.Universität Frankfurt/MainGermany
  2. 2.Universität ErlangenNürnbergGermany
  3. 3.Gmelin InstituteFrankfurt/MainGermany

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