Si Silicon pp 233-238 | Cite as

Silicon Nitride in Field Effect Transistor-Based Integrated Circuits (FET ICs)

  • Eberhard F. Krimmel
  • Rudolf Hezel
  • Uwe Nohl
  • Rainer Bohrer
Chapter
Part of the Si. Silicium. Silicon (System-Nr. 15) book series (GMELIN, volume S-i / B / 1-5 / 5 / c)

Abstract

One of the crucial components in FET-based ICs is the thin dielectric layer which insulates the active portion of the device from the gate. Suitable silicon nitride layers are formed by thermal nitridation of Si, which due to the diffusion barrier effect is limited to a silicon nitride thickness less than 6 nm, and by plasma nitridation in dry NH3 up to a thickness of 20 nm [1], by ion implantation of nitrogen [2], plasma deposition, or nitridation of silicon oxide to form nitride oxide layers with a variable nitrogen content of up to 50 at%.

Keywords

Steam Arsenic Boron Recrystallization Nitride 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1991

Authors and Affiliations

  • Eberhard F. Krimmel
    • 1
  • Rudolf Hezel
    • 2
  • Uwe Nohl
    • 3
  • Rainer Bohrer
    • 3
  1. 1.Universität Frankfurt/MainGermany
  2. 2.Universität ErlangenNürnbergGermany
  3. 3.Gmelin InstituteFrankfurt/MainGermany

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