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Si Silicon pp 221-232 | Cite as

Silicon Nitride in Integrated Circuit (IC) Technology

  • Eberhard F. Krimmel
  • Rudolf Hezel
  • Uwe Nohl
  • Rainer Bohrer
Chapter
  • 222 Downloads
Part of the Si. Silicium. Silicon (System-Nr. 15) book series (GMELIN, volume S-i / B / 1-5 / 5 / c)

Abstract

Advanced processing of integrated circuits in bipolar and MOS technology becomes more and more identical. The design even merges both types of elements (BiMOS technique) making use of the inherent advantages of both the bipolar and MIS techniques. Silicon nitride masks are used for selective oxidation in IC fabrication including bipolar and FET devices, i.e. at least one bipolar transistor and at least one insulated-gate FET [1]; for their use in deposition and patterning of polycrystalline Si, see [2]. See also [3, 4] for use as dielectric, n-p-n bipolar transistors and n-channel MOS transistors are prepared in the BiMOS IC technique using nitride masks for selective oxidation to form the field oxide and for implanting boron ions to form the base region [5]. The current transport (holes or electrons) in such MNOS structures with complementary, tunneling emitter, bipolar transistors has been studied [6].

Keywords

Silicon Nitride Silicon Oxide Layer Silicon Oxide Film Deposit Silicon Oxide Silicon Nitride Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1991

Authors and Affiliations

  • Eberhard F. Krimmel
    • 1
  • Rudolf Hezel
    • 2
  • Uwe Nohl
    • 3
  • Rainer Bohrer
    • 3
  1. 1.Universität Frankfurt/MainGermany
  2. 2.Universität ErlangenNürnbergGermany
  3. 3.Gmelin InstituteFrankfurt/MainGermany

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