Si Silicon pp 204-205 | Cite as

Schottky Diodes

  • Eberhard F. Krimmel
  • Rudolf Hezel
  • Uwe Nohl
  • Rainer Bohrer
Chapter
Part of the Si. Silicium. Silicon (System-Nr. 15) book series (GMELIN, volume S-i / B / 1-5 / 5 / c)

Abstract

Schottky diodes or Schottky barrier diodes make use of the Schottky contact between a metal and a semiconductor. A Schottky contact is based on the difference of the work functions of the metal and of the semiconductor. By contrast, insulating layers of silicon oxide do not necessarily have ideal electrical properties because of positive oxygen charges and nonuniform electric potentials at the edges of metal/semiconductor junctions which prevent diodes from having good barrier properties. These problems can be circumvented by providing an insulating silicon oxide layer with contact windows and a second layer of silicon nitride with smaller windows. Thus, the nitride layer covers the edges of the semiconductor surface exposed by the original opening of the silicon oxide layer. The metal barrier contact is prepared on the exposed semiconductor surface [1]. Detailed experimental and theoretical studies of metal/thermally grown ultrathin silicon nitride interfacial layer/Si Schottky barrier diodes explain the dependence of the barrier height on the thickness of the nitride layer for a variety of contact metals. Interface traps are not present in sufficient quantity to affect the silicon nitride layer thickness-related barrier height. The difference in barrier height depends on the band lineup at the nitride/metal interface and on fixed charge defects at the silicon nitride/Si interface. I–V characteristics of such diodes show modified barrier heights with ideality factors of nearly unity, superior to diodes with silicon oxide interfacial layers [2, 3].

Keywords

GaAs Nitride Encapsulation Marin Undercut 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1991

Authors and Affiliations

  • Eberhard F. Krimmel
    • 1
  • Rudolf Hezel
    • 2
  • Uwe Nohl
    • 3
  • Rainer Bohrer
    • 3
  1. 1.Universität Frankfurt/MainGermany
  2. 2.Universität ErlangenNürnbergGermany
  3. 3.Gmelin InstituteFrankfurt/MainGermany

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