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Si Silicon pp 201-203 | Cite as

Charge-Coupled Devices (CCDs)

  • Eberhard F. Krimmel
  • Rudolf Hezel
  • Uwe Nohl
  • Rainer Bohrer
Chapter
Part of the Si. Silicium. Silicon (System-Nr. 15) book series (GMELIN, volume S-i / B / 1-5 / 5 / c)

Abstract

Charge-coupled devices (CCD) are applied to integrate circuits for signal processing, optical imaging, and computer memory. The device consists of an input element for injecting a controlled charge into the main part, an array of MIS capacitors used in the dynamic operation mode, and a sensor device registering the charge arriving at the end of the array. Charge losses must be minimized. This imposes severe requirements on the quality of the gate insulator.

Keywords

Silicon Nitride Silicon Oxide Layer Charge Storage Control Charge Charge Loss 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1991

Authors and Affiliations

  • Eberhard F. Krimmel
    • 1
  • Rudolf Hezel
    • 2
  • Uwe Nohl
    • 3
  • Rainer Bohrer
    • 3
  1. 1.Universität Frankfurt/MainGermany
  2. 2.Universität ErlangenNürnbergGermany
  3. 3.Gmelin InstituteFrankfurt/MainGermany

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