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Charge-Coupled Devices (CCDs)

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Si Silicon

Part of the book series: Si. Silicium. Silicon (System-Nr. 15) ((2074,volume S-i / B / 1-5 / 5 / c))

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Abstract

Charge-coupled devices (CCD) are applied to integrate circuits for signal processing, optical imaging, and computer memory. The device consists of an input element for injecting a controlled charge into the main part, an array of MIS capacitors used in the dynamic operation mode, and a sensor device registering the charge arriving at the end of the array. Charge losses must be minimized. This imposes severe requirements on the quality of the gate insulator.

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Authors and Affiliations

  1. Universität Frankfurt/Main, Germany

    Eberhard F. Krimmel

  2. Universität Erlangen, Nürnberg, Germany

    Rudolf Hezel

  3. Gmelin Institute, Frankfurt/Main, Germany

    Uwe Nohl & Rainer Bohrer

Authors
  1. Eberhard F. Krimmel
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  2. Rudolf Hezel
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  3. Uwe Nohl
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  4. Rainer Bohrer
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Editor information

Editors and Affiliations

  1. Gmelin Institute, Frankfurt/Main, Germany

    Alfred Pebler  & Friedrich Schröder  & 

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© 1991 Springer-Verlag Berlin Heidelberg

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Krimmel, E.F., Hezel, R., Nohl, U., Bohrer, R. (1991). Charge-Coupled Devices (CCDs). In: Pebler, A., Schröder, F. (eds) Si Silicon. Si. Silicium. Silicon (System-Nr. 15), vol S-i / B / 1-5 / 5 / c. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09901-8_14

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  • DOI: https://doi.org/10.1007/978-3-662-09901-8_14

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-09903-2

  • Online ISBN: 978-3-662-09901-8

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