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Silicon pp 95-122 | Cite as

Films by Molecular-Beam Epitaxy

  • I. Eisele
  • J. Schulze
  • E. Kasper
Chapter

Abstract

Epitaxial growth proceeds by the attachment of atoms on the correct positions of a given lattice. The orientation and atomic spacings of the lattice are usually those predicted from a single-crystalline substrate with a clean surface. The attachment of atoms from the vapour phase typically follows a three-step scheme of adsorption, diffusion and incorporation into surface steps (Fig. 6.1). The adsorbed atoms, called adatoms, are in a precursor state for later incorporation into the lattice. The adsorption energy W ad is lower than the binding energy W b, usually 1/2 to 2/3 of W b.

Keywords

Critical Thickness Misfit Dislocation Heterojunction Bipolar Transistor Solid Phase Epitaxy Drift Zone 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2004

Authors and Affiliations

  • I. Eisele
  • J. Schulze
  • E. Kasper

There are no affiliations available

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