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Polycrystalline Silicon Films for Electronic Devices

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Silicon

Abstract

Polycrystalline silicon (poly-Si) plays an important role in the electronic devices of today. Several advantages are offered by poly-Si, which makes it one of the most important fundamental developments in the history of integrated circuits. First, from a structural point of view, poly-Si matches the mechanical properties of single-crystal Si, has good step coverage if deposited by CVD, has a high melting point, forms an adherent oxide, and is compatible with HF. From the device fabrication side, it absorbs and re-emits dopants, it neutralizes heavy metals (gettering), it has a compatible work function for MOS devices, and it forms high-conductivity silicides.

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Authors
  1. A. Slaoui
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  2. P. Siffert
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Editor information

Editors and Affiliations

  1. General Secretary European Materials Research Society, 23 rue du Loess, 67037, Strasbourg Cedex 2, France

    P. Siffert

  2. Siemens Corporate Research Laboratories, München, Germany

    E. F. Krimmel

  3. J.W. Goethe University, Frankfurt/M, Germany

    E. F. Krimmel

  4. European Materials Research Society, Strasbourg, France

    E. F. Krimmel

  5. Mendelssohnstr. 7, 82049, Pullach/Isartal, Germany

    E. F. Krimmel

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Slaoui, A., Siffert, P. (2004). Polycrystalline Silicon Films for Electronic Devices. In: Siffert, P., Krimmel, E.F. (eds) Silicon. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-09897-4_4

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  • DOI: https://doi.org/10.1007/978-3-662-09897-4_4

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